Magneto-spectroscopy of donor-bound excitons in GaN (Englisch)
- Neue Suche nach: Wysmolek, A.
- Neue Suche nach: Wysmolek, A.
- Neue Suche nach: Stępniewski, R.
- Neue Suche nach: Potemski, M.
In:
Physica / B
;
401
; 441-446
;
2007
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Magneto-spectroscopy of donor-bound excitons in GaN
-
Beteiligte:
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Erschienen in:Physica / B ; 401 ; 441-446
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Verlag:
- Neue Suche nach: North-Holland Physics Publ.
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Erscheinungsort:Amsterdam
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Erscheinungsdatum:2007
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.00 / 51.00 / 33.60 / 33.60
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3400
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Defect states of p-type InMnP:Zn implanted with Mn ionKim, J.S. / Lee, Y.-I. / Ha, L. / Kim, E.K. / Shon, Yoon / Kang, T.W. et al. | 2007
- 469
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Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiationHayama, K. / Takakura, K. / Ohyama, H. / Kuboyama, S. / Simoen, E. / Mercha, A. / Claeys, C. et al. | 2007
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Modeling fast-transient defect evolution and carrier recombination in pulse-neutron-irradiated Si devicesMyers, S.M. / Wampler, W.R. / Cooper, P.J. / King, D.B. et al. | 2007
- 477
-
Quantitative analysis of complexes in electron irradiated CZ siliconInoue, N. / Ohyama, H. / Goto, Y. / Sugiyama, T. et al. | 2007
- 483
-
Properties and identification of the oxygen-related radiation defects in siliconYarykin, Nikolai / Weber, Jörg et al. | 2007
- 487
-
IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped SiLondos, C.A. / Andrianakis, A. / Aliprantis, D. / Ohyama, H. / Emtsev, V.V. / Oganesyan, G.A. et al. | 2007
- 491
-
Effects of defect clustering in neutron irradiated siliconSeager, C.H. / Fleming, R.M. / Lang, D.V. / Cooper, P.J. / Bielejec, E. / Campbell, J.M. et al. | 2007
- 495
-
Self-interstitials and Frenkel pairs in electron-irradiated germaniumCarvalho, A. / Jones, R. / Goss, J. / Janke, C. / Coutinho, J. / Öberg, S. / Briddon, P.R. et al. | 2007
- 499
-
A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS)Nyamhere, Cloud / Auret, F.D. / Das, A.G.M. / Chawanda, A. et al. | 2007
- 503
-
Deep levels in a-irradiated p-type MOCVD GaAsNaz, N. A. / Qurashi, U. S. / Zafar Iqbal, M. et al. | 2007
- 503
-
Deep levels in α-irradiated p-type MOCVD GaAsNaz, Nazir A. / Qurashi, Umar S. / Zafar Iqbal, M. et al. | 2007
- 507
-
Magnetic resonance studies of defects in electron-irradiated ZnO substratesSon, N.T. / Ivanov, I.G. / Kuznetsov, A.Yu. / Svensson, B.G. / Zhao, Q.X. / Willander, M. / Morishita, N. / Ohshima, T. / Itoh, H. / Isoya, J. et al. | 2007
- 511
-
Defect studies for the development of nano-scale silicon diffusion simulatorsUematsu, Masashi / Shimizu, Yasuo / Itoh, K.M. et al. | 2007
- 519
-
Defect analysis of hydrogenated nanocrystalline Si thin filmsCavallini, A. / Cavalcoli, D. / Rossi, M. / Tomasi, A. / Pizzini, S. / Chrastina, D. / Isella, G. et al. | 2007
- 523
-
Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablationFukata, N. / Matsushita, S. / Tsurui, T. / Chen, J. / Sekiguchi, T. / Uchida, N. / Murakami, K. et al. | 2007
- 527
-
Electronic transport through Si nanocrystal films: Spin-dependent conductivity studiesPereira, R.N. / Stegner, A.R. / Klein, K. / Lechner, R. / Dietmueller, R. / Wiggers, H. / Brandt, M.S. / Stutzmann, M. et al. | 2007
- 531
-
Algorithms for defects in nanostructuresChan, Tzu-Liang / Tiago, Murilo L. / Chelikowsky, James R. et al. | 2007
- 537
-
The structure and properties of vacancies in Si nano-crystals calculated by real space pseudopotential methodsBeckman, S.P. / Chelikowsky, James R. et al. | 2007
- 541
-
Phosphorus doping of Si nanocrystals: Interface defects and charge compensationStegner, A.R. / Pereira, R.N. / Klein, K. / Wiggers, H. / Brandt, M.S. / Stutzmann, M. et al. | 2007
- 546
-
Alignment of hydrogen-related defect levels at the interfaceAlkauskas, Audrius et al. | 2007
- 546
-
Alignment of hydrogen-related defect levels at the interfaceAlkauskas, Audrius / Pasquarello, Alfredo et al. | 2007
- 546
-
Alignment of hydrogen-related defect levels at the Formula Not Shown interfaceAlkauskas, A. / Pasquarello, A. et al. | 2007
- 550
-
Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonanceStesmans, A. / Afanas’ev, V.V. et al. | 2007
- 556
-
Semiconductor defects at the Formula Not Shown interfaceDevynck, F. / Pasquarello, A. et al. | 2007
- 556
-
Semiconductor defects at the interfaceDevynck, Fabien et al. | 2007
- 556
-
Semiconductor defects at the interfaceDevynck, Fabien / Pasquarello, Alfredo et al. | 2007
- 560
-
Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growthTaishi, Toshinori / Ohno, Yutaka / Yonenaga, Ichiro / Hoshikawa, Keigo et al. | 2007
- 564
-
Passivation of hybrid-orientation direct silicon bonded interfacesWagener, Magnus C. / Seacrist, Mike / Rozgonyi, George A. et al. | 2007
- 568
-
Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wellsLee, Jiunn-Chyi / Wu, Ya-Fen / Fang, Chia-Hui / Wang, Jen-Cheng / Nee, Tzer-En et al. | 2007
- 572
-
Investigation of defect structures in InGaN/GaN multiple quantum wells grown on Si(111) substrate by metalorganic vapor phase epitaxyWu, G.M. / Kao, Y.L. et al. | 2007
- 576
-
DLTS study of the Wannier–Stark effect in Ge/Si QD superlatticesSobolev, Mikhail M. / Cirlin, Georgii E. / Tonkikh, Alexander A. et al. | 2007
- 580
-
Electron- and hole-related electrical activity of InAs/GaAs quantum dotsKruszewski, P. / Dobaczewski, L. / Markevich, V.P. / Mitchell, C. / Missous, M. / Peaker, A.R. et al. | 2007
- 584
-
Localization of defects in InAs QD symmetric InGaAs/GaAs DWELL structuresCasas Espínola, J.L. / Torchynska, T.V. / Velasquez Lozada, E. / Shcherbyna, L.V. / Stintz, A. / Peña Sierra, R. et al. | 2007
- 587
-
Can highly enriched 28Si reveal new things about old defects?Thewalt, M.L.W. / Steger, M. / Yang, A. / Stavrias, N. / Cardona, M. / Riemann, H. / Abrosimov, N.V. / Churbanov, M.F. / Gusev, A.V. / Bulanov, A.D. et al. | 2007
- 593
-
High resolution photoluminescence of sulphur- and copper-related isoelectronic bound excitons in highly enriched 28SiYang, A. / Steger, M. / Thewalt, M.L.W. / Cardona, M. / Riemann, H. / Abrosimov, N.V. / Churbanov, M.F. / Gusev, A.V. / Bulanov, A.D. / Kovalev, I.D. et al. | 2007
- 597
-
Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlatticesShimizu, Yasuo / Takano, Akio / Uematsu, Masashi / Itoh, Kohei M. et al. | 2007
- 600
-
Impurity absorption spectroscopy of the deep double donor sulfur in isotopically enriched siliconSteger, M. / Yang, A. / Thewalt, M.L.W. / Cardona, M. / Riemann, H. / Abrosimov, N.V. / Churbanov, M.F. / Gusev, A.V. / Bulanov, A.D. / Kovalev, I.D. et al. | 2007
- 604
-
Defect studies in electron-irradiated ZnO and GaNTuomisto, F. / Look, D.C. / Farlow, G.C. et al. | 2007
- 609
-
Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germaniumArutyunov, N.Yu. / Emtsev, V.V. et al. | 2007
- 613
-
Effects of thermal treatment on optically active vacancy defects in CVD diamondsMäki, J.-M. / Tuomisto, F. / Kelly, C. / Fisher, D. / Martineau, P. et al. | 2007
- 617
-
Muonium defect states and ionization energies in SiGe alloysKing, P.J.C. / Lichti, R.L. / Carroll, B.R. / Celebi, Y.G. / Chow, K.H. / Yonenaga, I. et al. | 2007
- 621
-
Stability and diffusivity of positively charged muonium in SiMansour, A.I. / Salman, Z. / Fan, I. / King, P.J.C. / Hitti, B. / Cottrell, S.P. / Jung, J. / Chow, K.H. et al. | 2007
- 624
-
Dynamics of diamagnetic muonium: Precession signature in Ge and optical excitationFan, I. / Chow, K.H. / Hitti, B. / Scheuermann, R. / Mansour, A.I. / Lichti, R.L. / MacFarlane, W.A. / Jung, J. / Schultz, B.E. et al. | 2007
- 627
-
Diffusion and trapping of positively charged muonium in InAsLichti, R.L. / Vernon, J.E. / Carroll, B.R. / Celebi, Y.G. / King, P.J.C. / Cox, S.F.J. et al. | 2007
- 631
-
Charge-state transitions of muonium in 6H silicon carbideBani-Salameh, H.N. / Meyer, A.G. / Carroll, B.R. / Lichti, R.L. / Celebi, Y.G. / Chow, K.H. / King, P.J.C. / Cox, S.F.J. et al. | 2007
- 635
-
Influence of optical excitation on the precession signature of charged muoniumFan, I. / Chow, K.H. / Scheuermann, R. / Hitti, B. / MacFarlane, W.A. / Schultz, B.E. / Mansour, A.I. / Jung, J. / Lichti, R.L. et al. | 2007
- 639
-
From extended defects and interfaces to point defects in three dimensions—The case of InxGa1−xNKisielowski, C. / Bartel, T.P. / Specht, P. / Chen, F.-R. / Shubina, T.V. et al. | 2007
- 646
-
TEM studies of as-grown, irradiated and annealed InN filmsLiliental-Weber, Z. / Jones, R.E. / van Genuchten, H.C.M. / Yu, K.M. / Walukiewicz, W. / Ager, J.W. III / Haller, E.E. / Lu, H. / Schaff, W.J. et al. | 2007
- 650
-
Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxyOhno, Y. / Taishi, T. / Yonenaga, I. / Ichikawa, S. / Hirai, R. / Takeda, S. et al. | 2007
- 654
-
Defect spectroscopy with local excitation from core levelsKonovalov, Igor / Makhova, Liudmila / Mitdank, Rüdiger et al. | 2007
- 658
-
Ab-initio simulations of self-diffusion mechanisms in semiconductorsEl-Mellouhi, Fedwa / Mousseau, Normand et al. | 2007
- 662
-
Development of the 8Li cross-relaxation technique: Applications in semiconductors and other condensed matter systemsMansour, A.I. / Morris, G.D. / Salman, Z. / Chow, K.H. / Dunlop, T. / Jung, J. / Fan, I. / MacFarlane, W.A. / Kiefl, R.F. / Parolin, T.J. et al. | 2007
- 666
-
Application of DLTS and Laplace-DLTS to defect characterization in high-resistivity semiconductorsMakarenko, L.F. / Evans-Freeman, J.H. et al. | 2007
- 670
-
Effect of improved band-gap description in density functional theory on defect energy levels in -quartzAlkauskas, Audrius / Pasquarello, Alfredo et al. | 2007
- 670
-
Effect of improved band-gap description in density functional theory on defect energy levels in Formula Not Shown -quartzAlkauskas, A. / Pasquarello, A. et al. | 2007
- 674
-
Stochastically accelerated molecular dynamics: Application to 1-DWest, D. / Zhang, S.B. et al. | 2007
- 677
-
Aspects of point defects in coherent terahertz-wave spectroscopyNishizawa, Jun-ichi / Sasaki, Tetsuo / Oyama, Yutaka / Tanabe, Tadao et al. | 2007
- 682
-
Control of impurity diffusion by IR excitationsShirai, K. / Yamaguchi, H. / Katayama-Yoshida, H. et al. | 2007
- 686
-
Design and characterization of pentacene–inorganic interfacesEvans, Paul G. / Park, Byoungnam / Seo, Soonjoo / Zwickey, Jodi / In, Insik / Paoprasert, Peerasak / Gopalan, Padma et al. | 2007
- 691
-
Dislocation structures in tetragonal hen egg-white lysozyme crystals using synchrotron white-beam topographyKoizumi, H. / Tachibana, M. / Kojima, K. / Yonenaga, I. et al. | 2007
- 695
-
Rattling “guest” impurities in Si and Ge clathrate semiconductorsMyles, Charles W. / Biswas, Koushik / Nenghabi, Emmanuel et al. | 2007
- 699
-
Plastic strain field caused by dislocationsMaciejewski, Grzegorz et al. | 2007
- 702
-
Valence control and metallization of boron by electronic dopingDekura, H. / Shirai, K. / Katayama-Yoshida, H. et al. | 2007
- IFC
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IFC (Ed. Board)| 2007
- ix
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Contents| 2007