Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition (Unbekannt)
- Neue Suche nach: Hossain, M.Z.
- Neue Suche nach: Hossain, M.Z.
- Neue Suche nach: Mimura, T.
- Neue Suche nach: Uekusa, S.
In:
Journal of luminescence
;
129
, 9
; 931-936
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition
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Beteiligte:
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Erschienen in:Journal of luminescence ; 129, 9 ; 931-936
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Verlag:
- Neue Suche nach: North-Holland Publ. Co.
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Erscheinungsort:Amsterdam
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Erscheinungsdatum:2009
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 535/3470
- Neue Suche nach: 33.00
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 129, Ausgabe 9
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- IFC
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Editorial Board| 2009