Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High-κ Dielectrics, and Metallic Source-Drain (Englisch)
- Neue Suche nach: Vinet, M.
- Neue Suche nach: Vinet, M.
- Neue Suche nach: Poiroux, T.
- Neue Suche nach: Licitra, C.
- Neue Suche nach: Widiez, J.
- Neue Suche nach: Bhandari, J.
- Neue Suche nach: Previtali, B.
- Neue Suche nach: Vizioz, C.
- Neue Suche nach: Lafond, D.
- Neue Suche nach: Arvet, C.
- Neue Suche nach: Besson, P.
- Neue Suche nach: Baud, L.
- Neue Suche nach: Morand, Y.
- Neue Suche nach: Rivoire, M.
- Neue Suche nach: Nemouchi, F.
- Neue Suche nach: Carron, V.
- Neue Suche nach: Deleonibus, S.
In:
IEEE electron device letters
;
30
, 7
; 748-750
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High-κ Dielectrics, and Metallic Source-Drain
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Beteiligte:Vinet, M. ( Autor:in ) / Poiroux, T. / Licitra, C. / Widiez, J. / Bhandari, J. / Previtali, B. / Vizioz, C. / Lafond, D. / Arvet, C. / Besson, P.
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Erschienen in:IEEE electron device letters ; 30, 7 ; 748-750
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
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Erscheinungsdatum:2009
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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