Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition (Englisch)
- Neue Suche nach: Cammilleri, V.D.
- Neue Suche nach: Cammilleri, V.D.
- Neue Suche nach: Yam, V.
- Neue Suche nach: Fossard, F.
- Neue Suche nach: Renard, C.
- Neue Suche nach: Bouchier, D.
- Neue Suche nach: Zheng, Y.
- Neue Suche nach: Fazzini, P.F.
- Neue Suche nach: Houdellier, F.
- Neue Suche nach: Hÿtch, M.
In:
Materials science in semiconductor processing
;
11
, 5
; 214-216
;
2008
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition
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Beteiligte:Cammilleri, V.D. ( Autor:in ) / Yam, V. / Fossard, F. / Renard, C. / Bouchier, D. / Zheng, Y. / Fazzini, P.F. / Houdellier, F. / Hÿtch, M.
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Erschienen in:Materials science in semiconductor processing ; 11, 5 ; 214-216
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Verlag:
- Neue Suche nach: Pergamon, Elsevier Science
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Erscheinungsort:Oxford [u.a.]
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Erscheinungsdatum:2008
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.56 / 53.56
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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-
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