Experimental Study on Power Consumption in Lifetime Engineered Power Diodes (Englisch)
- Neue Suche nach: Daliento, S.
- Neue Suche nach: Daliento, S.
- Neue Suche nach: Mele, L.
- Neue Suche nach: Spirito, P.
- Neue Suche nach: Carta, R.
- Neue Suche nach: Merlin, L.
In:
IEEE transactions on electron devices
;
56
, 11
; 2819-2824
;
2009
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Experimental Study on Power Consumption in Lifetime Engineered Power Diodes
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 56, 11 ; 2819-2824
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2009
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 56, Ausgabe 11
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Sub-50-nm Dual-Gate Thin-Film Transistors for Monolithic 3-D FlashWalker, A.J. et al. | 2009
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Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- $\kappa$ InsulatorsRuiz, F.J.G. / Tienda-Luna, I.M. / Godoy, A. / Donetti, L. / Gamiz, F. et al. | 2009
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Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-κ InsulatorsGarcía Ruiz, F.J. et al. | 2009
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Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold RegionYu-Sheng Wu, / Pin Su, et al. | 2009
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Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under Synchronized Voltage StressMeng Zhang, / Mingxiang Wang, / Huaisheng Wang, / Jie Zhou, et al. | 2009
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Optimized Porous Si Microplate Technology for On-Chip Local RF IsolationZacharatos, F. / Contopanagos, H.F. / Nassiopoulou, A.G. et al. | 2009
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Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-κ Blocking OxideHe, W. et al. | 2009
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Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital CircuitsKhatami, Y. / Banerjee, K. et al. | 2009
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Active Terahertz Spoof Surface Plasmon Polariton Switch Comprising the Perfect Conductor MetamaterialKyungjun Song, / Mazumder, P. et al. | 2009
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Investigation of Low-Frequency Noise in N-Channel FinFETs From Weak to Strong InversionChengqing Wei, / Yong-Zhong Xiong, / Xing Zhou, et al. | 2009
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Solid-State Power and High Voltage - Explanation of the Rugged LDMOS Behavior by Means of Numerical AnalysisReggiani, S. et al. | 2009
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Explanation of the Rugged LDMOS Behavior by Means of Numerical AnalysisReggiani, S. / Baccarani, G. / Gnani, E. / Gnudi, A. / Denison, M. / Pendharkar, S. / Wise, R. / Seetharaman, S. et al. | 2009
- 2819
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Experimental Study on Power Consumption in Lifetime Engineered Power DiodesDaliento, S. / Mele, L. / Spirito, P. / Carta, R. / Merlin, L. et al. | 2009
- 2825
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The nn+-Junction as the Key to Improved Ruggedness and Soft Recovery of Power DiodesLutz, J. et al. | 2009
- 2825
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The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power DiodesLutz, J. / Baburske, R. / Min Chen, / Heinze, B. / Domeij, M. / Felsl, H.-P. / Schulze, H.-J. et al. | 2009
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AlGaN Schottky Diodes for Detector Applications in the UV Wavelength RangeHellings, G. / John, J. / Lorenz, A. / Malinowski, P. / Mertens, R. et al. | 2009
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Solid-State Sensors and Actuators - AlGaN Schottky Diodes for Detector Applications in the UV Wavelength RangeHellings, G. et al. | 2009
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Scale-Length Assessment of the Trigate Bulk MOSFET DesignXin Sun, / Liu, T.-J.K. et al. | 2009
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BRIEFS - Scale-Length Assessment of the Trigate Bulk MOSFET DesignSun, X. et al. | 2009
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Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS TransistorsChen, J.F. / Shiang-Yu Chen, / Kuo-Ming Wu, / Shih, J.R. / Kenneth Wu, et al. | 2009
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The Dependence of the Performance of Strained NMOSFETs on Channel WidthLingyen Yeh, / Ming Han Liao, / Chun Heng Chen, / Jun Wu, / Lee, J.Y.-m. / Chee Wee Liu, / Lee, T.L. / Liang, M.S. et al. | 2009
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[Front cover]| 2009
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IEEE Transactions on Electron Devices publication information| 2009
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IEEE Transactions on Electron Devices information for authors| 2009