Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100) (Englisch)
- Neue Suche nach: Stegemann, Bert
- Neue Suche nach: Stegemann, Bert
- Neue Suche nach: Schoepke, Andreas
- Neue Suche nach: Sixtensson, Daniel
- Neue Suche nach: Gorka, Benjamin
- Neue Suche nach: Lussky, Thomas
- Neue Suche nach: Schmidt, Manfred
In:
Physica / E
;
41
, 6
; 1019-1025
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)
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Beteiligte:Stegemann, Bert ( Autor:in ) / Schoepke, Andreas / Sixtensson, Daniel / Gorka, Benjamin / Lussky, Thomas / Schmidt, Manfred
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Erschienen in:Physica / E ; 41, 6 ; 1019-1025
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Verlag:
- Neue Suche nach: North-Holland, Elsevier Science
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2009
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.68 / 50.94
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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