X-ray diffraction studies of AlxGa1-xN (0=x=1) ternary alloys grown on sapphire substrate (Englisch)
- Neue Suche nach: Shiong, Ng Sha
- Neue Suche nach: Shiong, Ng Sha
- Neue Suche nach: Guan, Ching Chin
- Neue Suche nach: Hassan, Zainuriah
- Neue Suche nach: Hassan, Haslan Abu
In:
Microelectronics international
;
28
, 2
; 44-49
;
2011
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:X-ray diffraction studies of AlxGa1-xN (0=x=1) ternary alloys grown on sapphire substrate
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Beteiligte:
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Erschienen in:Microelectronics international ; 28, 2 ; 44-49
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Verlag:
- Neue Suche nach: MCB Univ. Press
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Erscheinungsort:Bradford
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Erscheinungsdatum:2011
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.00
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 53.00 Elektrotechnik: Allgemeines -
Datenquelle:
Inhaltsverzeichnis – Band 28, Ausgabe 2
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X-ray diffraction studies of AlxGa1−xN (0≤x≤1) ternary alloys grown on sapphire substrateSha Shiong, Ng / Chin Guan, Ching / Hassan, Zainuriah / Abu Hassan, Haslan et al. | 2011
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X-ray diffraction studies of AlxGa1-xN (0 less than or equal to x less than or equal to 1) ternary alloys grown on sapphire substrateShiong, Ng-Sha / Guan, Ching-Chin / Hassan, Zainuriah / Hassan, Haslan Abu et al. | 2011
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