Changes in the Editorial Board (Englisch)
- Neue Suche nach: Verret, D
- Neue Suche nach: Verret, D
In:
IEEE transactions on electron devices
;
58
, 7
; 1819-1822
;
2011
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Changes in the Editorial Board
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Beteiligte:Verret, D ( Autor:in )
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Erschienen in:IEEE transactions on electron devices ; 58, 7 ; 1819-1822
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2011
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 58, Ausgabe 7
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1819
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Changes in the Editorial BoardVerret, Doug et al. | 2011
- 1822
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Silicon and Column IV Semiconductor Devices - Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser AnnealingSmith, J T et al. | 2011
- 1822
-
Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser AnnealingSmith, J T / Sandow, C / Das, S / Minamisawa, R A / Mantl, S / Appenzeller, J et al. | 2011
- 1830
-
A Unified Carrier-Transport Model for the Nanoscale Surrounding-Gate MOSFET Comprising Quantum–Mechanical EffectsGuangxi Hu, / Jinglun Gu, / Shuyan Hu, / Ying Ding, / Ran Liu, / Ting-Ao Tang, et al. | 2011
- 1837
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A 60-GHz Millimeter-Wave CMOS Integrated On-Chip Antenna and Bandpass FilterHuey-Ru Chuang, / Lung-Kai Yeh, / Pei-Chun Kuo, / Kai-Hsiang Tsai, / Han-Lin Yue, et al. | 2011
- 1846
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Performance and Yield Benefits of Quasi-Planar Bulk CMOS Technology for 6-T SRAM at the 22-nm NodeChanghwan Shin, / Damrongplasit, N / Xin Sun, / Tsukamoto, Y / Nikolic, B / Tsu-Jae King Liu, et al. | 2011
- 1855
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A Tunnel FET for Formula Not Shown Scaling Below 0.6 V With a CMOS-Comparable PerformanceAsra, R. / Shrivastava, M. / Murali, K. V. / Pandey, R. K. / Gossner, H. / Rao, V. R. et al. | 2011
- 1855
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A Tunnel FET for $V_{DD}$ Scaling Below 0.6 V With a CMOS-Comparable PerformanceAsra, R / Shrivastava, M / Murali, K V R M / Pandey, R K / Gossner, H / Rao, V R et al. | 2011
- 1864
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Three-Dimensional Simulation of Charge-Trap Memory Programming—Part I: Average BehaviorAmoroso, S M / Maconi, A / Mauri, A / Compagnoni, Christian Monzio / Spinelli, A S / Lacaita, A L et al. | 2011
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Three-Dimensional Simulation of Charge-Trap Memory Programming—Part II: VariabilityMaconi, A / Amoroso, S M / Compagnoni, C M / Mauri, A / Spinelli, A S / Lacaita, A L et al. | 2011
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- 1886
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Pulsed Method for Characterizing Aqueous Media Using Nanowire Field Effect TransistorsMescher, M / Marcelis, B / de Smet, L C P M / Sudholter, E J R / Klootwijk, J H et al. | 2011
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- 1898
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Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling JunctionTura, A / Zhenning Zhang, / Peichi Liu, / Ya-Hong Xie, / Woo, Jason C S et al. | 2011
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Performance Comparison of Single- and Dual-Gate Carbon-Nanotube Thin-Film Field-Effect TransistorsNarasimhamurthy, K C / Paily, R et al. | 2011
- 1928
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RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic ResultsPaydavosi, N / Alam, A U / Ahmed, S / Holland, K D / Rebstock, J P / Vaidyanathan, M et al. | 2011
- 1941
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RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic ResultsPaydavosi, N / Rebstock, J P / Holland, K D / Ahmed, S / Alam, A U / Vaidyanathan, M et al. | 2011
- 1952
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A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base ContactCohen-Elias, D / Kraus, S / Cohen, S / Gavrilov, A / Ritter, D et al. | 2011
- 1952
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Compound Semiconductor Devices - A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base ContactCohen-Elias, D et al. | 2011
- 1957
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Contact and Channel 3rd-Order Nonlinearity in III-N HFETsKhan, B M / Simin, G S et al. | 2011
- 1963
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Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETsKharche, N / Klimeck, G / Kim, D / del Alamo, J A / Luisier, M et al. | 2011
- 1972
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Analysis of Electron Mobility in Inversion-Mode $ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ MOSFETsWeike Wang, / Hwang, J C M / Yi Xuan, / Ye, P D et al. | 2011
- 1972
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Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETsWang, W et al. | 2011
- 1972
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Analysis of Electron Mobility in Inversion-Mode Formula Not Shown MOSFETsWang, W. / Hwang, J. C. / Xuan, Y. / Ye, P. D. et al. | 2011
- 1979
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Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN SubstratesMochizuki, K / Mishima, T / Terano, A / Kaneda, N / Ishigaki, T / Tsuchiya, T et al. | 2011
- 1986
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Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky BarriersWei Lu, / Lingquan Wang, / Siyuan Gu, / Aplin, D P R / Estrada, D M / Yu, P K L / Asbeck, P M et al. | 2011
- 1995
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Thin Film Devices - Electrical-Stress-Induced Threshold Voltage Instability in Solution-Processed ZnO Thin-Film Transistors: An Experimental and Simulation StudyGupta, D et al. | 2011
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Electrical-Stress-Induced Threshold Voltage Instability in Solution-Processed ZnO Thin-Film Transistors: An Experimental and Simulation StudyGupta, D / Seunghyup Yoo, / Changhee Lee, / Yongtaek Hong, et al. | 2011
- 2003
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Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type $\hbox{Cu}_{2}\hbox{O}$ Thin-Film Transistors Using a $\hbox{HfO}_{2}$ High- $k$ Gate Dielectric Grown on a $\hbox{SiO}_{2}/\hbox{Si}$ Substrate by Pulsed Laser AblationXiao Zou, / Guojia Fang, / Jiawei Wan, / Xun He, / Haoning Wang, / Nishuang Liu, / Hao Long, / Xingzhong Zhao, et al. | 2011
- 2003
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Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type Cu2O Thin-Film Transistors Using a HfO2 High-k Gate Dielectric Grown on a SiO2/Si Substrate by Pulsed Laser AblationZou, X et al. | 2011
- 2008
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Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching StructuresYi-Hong Wu, / Po-Yi Kuo, / Yi-Hsien Lu, / Yi-Hsuan Chen, / Tsung-Yu Chiang, / Kuan-Ti Wang, / Li-Chen Yen, / Tien-Sheng Chao, et al. | 2011
- 2014
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Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar CellsLu, J / Kovalgin, A Y / van der Werf, K H M / Schropp, R E I / Schmitz, J et al. | 2011
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Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave InfraredAndrews, J R / Restaino, S R / Teare, S W / Sharma, Y D / Jang, W / Vandervelde, T E / Brown, J S / Reisinger, A / Sundaram, M / Krishna, S et al. | 2011
- 2022
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Optoelectronics, Displays, and Imaging - Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave InfraredAndrews, J R et al. | 2011
- 2028
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Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS TechnologyRichardson, J A / Webster, E A G / Grant, L A / Henderson, R K et al. | 2011
- 2036
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Transparent ZnO Nanowire-Network Ultraviolet PhotosensorShi-Ming Peng, / Yan-Kuin Su, / Liang-Wen Ji, / Sheng-Joue Young, / Chi-Nan Tsai, / Jhih-Hong Hong, / Zong-Syun Chen, / Cheng-Zhi Wu, et al. | 2011
- 2041
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The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTsMunzenrieder, N / Cherenack, K H / Troster, G et al. | 2011
- 2049
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Dynamic Analysis of Cascaded Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical DC Power GenerationJin-Wei Shi, / Kuo, F.-M / Chan-Shan Yang, / Lo, S.-S / Ci-Ling Pan, et al. | 2011
- 2057
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Low Specific on-Resistance Power MOS Transistor With Multilayer Carrier Accumulation Breaks the Limit Line of SiliconBaoxing Duan, / Yintang Yang, et al. | 2011
- 2057
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Solid-State Power and High Voltage Devices - Low Specific ON-Resistance Power MOS Transistor With Multilayer Carrier Accumulation Breaks the Limit Line of SiliconDuan, B et al. | 2011
- 2061
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Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD DevicesGriffoni, A / Shih-Hung Chen, / Thijs, S / Kaczer, B / Franco, J / Linten, D / De Keersgieter, A / Groeseneken, G et al. | 2011
- 2072
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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS DevicesTanaka, A / Oritsuki, Y / Kikuchihara, H / Miyake, M / Mattausch, H J / Miura-Mattausch, Mitiko / Liu, Y / Green, K et al. | 2011
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Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTsBuono, B / Ghandi, R / Domeij, M / Malm, B G / Zetterling, Carl-Mikael / Ostling, M et al. | 2011
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Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave AnnealingFu-Kuo Hsueh, / Yao-Jen Lee, / Kun-Lin Lin, / Current, M I / Ching-Yi Wu, / Tien-Sheng Chao, et al. | 2011
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Materials, Processing, and Packaging - Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave AnnealingHsueh, F-K et al. | 2011
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Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability CharacteristicsHyung-Suk Jung, / So-Ah Lee, / Sang-ho Rha, / Sang Young Lee, / Hyo Kyeom Kim, / Do Hyun Kim, / Kyu Hwan Oh, / Jung-Min Park, / Weon-Hong Kim, / Min-Woo Song, et al. | 2011
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Impacts of Zr Composition in Formula Not Shown Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability CharacteristicsJung, H. S. / Lee, S. A. / Rha, S. h. / Lee, S. Y. / Kim, H. K. / Kim, D. H. / Oh, K. H. / Park, J. M. / Kim, W. H. / Song, M. W. et al. | 2011
- 2094
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Solid-State Device Phenomena - Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability CharacteristicsJung, H-S et al. | 2011
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Impacts of Zr Composition in Hf1-x ZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability CharacteristicsJung, Hyung-Suk / Lee, So-Ah / Rha, Sang-ho / Lee, Sang-Young / Kim, Hyo-Kyeom / Kim, Do-Hyun / Oh, Kyu-Hwan / Park, Jung-Min / Kim, Weon-Hong / Song, Min-Woo et al. | 2011
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Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent CircuitTraversa, F L / Buccafurri, E / Alarcon, A / Albareda, G / Clerc, R / Calmon, F / Poncet, A / Oriols, X et al. | 2011
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Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High- Formula Not Shown and Integration With a TiN Metal Gate in a Gate-Last ProcessWu, L. / Yu, H. / Yew, K. S. / Pan, J. / Liu, W. J. / Duan, T. L. et al. | 2011
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Table of contents| 2011
- C2
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IEEE Transactions on Electron Devices publication information| 2011
- C3
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IEEE Transactions on Electron Devices information for authors| 2011