Solid-State Power and High Voltage Devices - Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric (Englisch)
- Neue Suche nach: Li, J
- Neue Suche nach: Li, J
- Neue Suche nach: Li, P
- Neue Suche nach: Huo, W
- Neue Suche nach: Zhang, G
- Neue Suche nach: Zhai, Y
- Neue Suche nach: Chen, X
In:
IEEE electron device letters
;
32
, 9
; 1266-1269
;
2011
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Solid-State Power and High Voltage Devices - Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric
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Beteiligte:
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Erschienen in:IEEE electron device letters ; 32, 9 ; 1266-1269
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Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
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Erscheinungsdatum:2011
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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