A deep-level analysis of NiAu/AlN/(1 1 1) p+-Si metalinsulatorsemiconductor capacitors (Englisch)
- Neue Suche nach: Simoen, E
- Neue Suche nach: Simoen, E
- Neue Suche nach: Visalli, D
- Neue Suche nach: Van Hove, M
- Neue Suche nach: Leys, M
- Neue Suche nach: Borghs, G
In:
Journal of physics / D
;
44
, 47
; 475104-475105
;
2011
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:A deep-level analysis of NiAu/AlN/(1 1 1) p+-Si metalinsulatorsemiconductor capacitors
-
Beteiligte:
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Erschienen in:Journal of physics / D ; 44, 47 ; 475104-475105
-
Verlag:
- Neue Suche nach: IOP Publ.
-
Erscheinungsort:Bristol
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Erscheinungsdatum:2011
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 44, Ausgabe 47
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