First principles study of O defects in CdSe (Englisch)
- Neue Suche nach: T-Thienprasert, J.
- Neue Suche nach: T-Thienprasert, J.
- Neue Suche nach: Limpijumnong, S.
- Neue Suche nach: Du, M.-H.
- Neue Suche nach: Singh, D.J.
In:
Physica / B
;
407
, 15
; 2841-2846
;
2012
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:First principles study of O defects in CdSe
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Beteiligte:
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Erschienen in:Physica / B ; 407, 15 ; 2841-2846
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Verlag:
- Neue Suche nach: North-Holland Physics Publ.
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Erscheinungsort:Amsterdam
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Erscheinungsdatum:2012
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.00 / 51.00 / 33.60 / 33.60
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3400
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaNZainal, N. / Novikov, S.V. / Akimov, A.V. / Staddon, C.R. / Foxon, C.T. / Kent, A.J. et al. | 2011
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First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2Oh, Young Jun / Noh, Hyeon-Kyun / Chang, K.J. et al. | 2011
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Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particlesMakarenko, L.F. / Moll, M. / Evans-Freeman, J.H. / Lastovski, S.B. / Murin, L.I. / Korshunov, F.P. et al. | 2011
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-
Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈111〉Liang, J.H. / Hu, C.H. / Bai, C.Y. / Chao, D.S. / Lin, C.M. et al. | 2011
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-
Laplace deep level transient spectroscopy: Embodiment and evolutionPeaker, A.R. / Markevich, V.P. / Hawkins, I.D. / Hamilton, B. / Bonde Nielsen, K. / Gościński, K. et al. | 2011
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On the effects of NBTI degradation in p-MOSFET devicesHussin, H. / Soin, N. / Karim, N.M. / Wan Muhamad Hatta, S.F. et al. | 2011
- 3034
-
Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surfaceOgawa, Masatoshi / Kamiya, Shoji / Izumi, Hayato / Tokuda, Yutaka et al. | 2011
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-
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation methodAsghar, M. / Iqbal, F. / Faraz, S.M. / Jokubavicius, V. / Wahab, Q. / Syväjärvi, M. et al. | 2011
- 3041
-
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopyAsghar, M. / Iqbal, F. / Faraz, S. / Jokubavicius, V. / Wahab, Q. / Syväjärvi, M. et al. | 2011
- 3044
-
Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cellArora, Swati / Singh, Vinamrita / Arora, Manoj / Pal Tandon, Ram et al. | 2011
- 3047
-
Stabilization of organic thin film transistors by ion implantationFraboni, B. / Cosseddu, P. / Wang, Y.Q. / Schulze, R.K. / Cavallini, A. / Nastasi, M. / Bonfiglio, A. et al. | 2011
- 3052
-
The study of below and above band-edge imperfection states in In2S3 solar energy materialsHo, Ching-Hwa et al. | 2011
- 3056
-
First-principles materials design of CuInSe2-based high-efficiency photovoltaic solar cellsTani, Yoshimasa / Sato, Kazunori / Katayama-Yoshida, Hiroshi et al. | 2011
- 3059
-
Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivityWoo, Sungho / Hoon Jeong, Jae / Kun Lyu, Hong / Jeong, Seonju / Hyoung Sim, Jun / Hyun Kim, Wook / Soo Han, Yoon / Kim, Youngkyoo et al. | 2011
- 3063
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Comparison between various finite-size supercell correction schemes for charged defect calculationsKomsa, Hannu-Pekka / Rantala, Tapio / Pasquarello, Alfredo et al. | 2011
- IFC
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Editorial Board| 2012
- iii
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Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS-26)Evans-Freeman, Jan / Vernon-Parry, Karen / Allen, Martin et al. | 2012
- iv
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The manuscript for these proceedings were received by the Publisher: begining of July 2011| 2012
- v
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Organizing committees and sponsors| 2012
- vii
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Contents| 2012
- xi
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PrefaceEvans-Freeman, Jan / Vernon-parry, Karen / Allen, Martin et al. | 2012