A New Recess Method for SA-STI NAND Flash Memory (Englisch)
- Neue Suche nach: Wang, Z-S
- Neue Suche nach: Wang, Z-S
- Neue Suche nach: Lee, Y-J
- Neue Suche nach: Yang, R
- Neue Suche nach: Lin, Y-C
- Neue Suche nach: Chen, H-H
- Neue Suche nach: Lin, C J
In:
IEEE electron device letters
;
33
, 6
; 896-899
;
2012
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:A New Recess Method for SA-STI NAND Flash Memory
-
Beteiligte:
-
Erschienen in:IEEE electron device letters ; 33, 6 ; 896-899
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:2012
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 33, Ausgabe 6
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 743
-
LETTERS - Silicon and Column IV Semiconductor Devices - Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded MemoriesWu, Q et al. | 2012
- 746
-
A Gate-Dielectric-Last Process via Photosolidification of Liquid ResinHan, J-W et al. | 2012
- 749
-
Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS DevicesKerber, A et al. | 2012
- 752
-
Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave VoltagesLee, C et al. | 2012
- 755
-
Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of (110) Uniaxial-Tensile-Strained (001) nMOSFETsChen, M-J et al. | 2012
- 758
-
Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOIYu, W et al. | 2012
- 761
-
The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in GermaniumRoy, A M et al. | 2012
- 764
-
11.72-cm2 Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA2.sSnook, M et al. | 2012
- 767
-
Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETsLeung, G et al. | 2012
- 770
-
Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive StressKang, T-K et al. | 2012
- 773
-
Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge ContactsTong, Y et al. | 2012
- 776
-
A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted DevicesMuralidhar, R et al. | 2012
- 779
-
Impact of Individual Charged Gate-Oxide Defects on the Entire ID-VG Characteristic of Nanoscaled FETsFranco, J et al. | 2012
- 782
-
Compound Semiconductor Devices - InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 106Zhou, G et al. | 2012
- 785
-
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High fmaxDenninghoff, D J et al. | 2012
- 788
-
On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas SensorHuang, C-C et al. | 2012
- 791
-
High-Performance InAs Nanowire MOSFETsDey, A W et al. | 2012
- 794
-
Self-Aligned N-Polar GaN/InAIN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mmNidhi et al. | 2012
- 797
-
Submicrometer Process and RF Operation of InAs Quantum Hot-Electron TransistorsNguyen van, H et al. | 2012
- 800
-
Monolithic HBV-Based 282-GHz Tripler With 31-mW Output PowerVukusic, J et al. | 2012
- 803
-
Unipolar Resistive Switching Characteristics of a Z1O2 Memory Device With Oxygen Ion Conductor Buffer LayerLee, D-Y et al. | 2012
- 806
-
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETsConzatti, F et al. | 2012
- 809
-
Thin-Film Devices - The Effects of Gadolinium Incorporation Into Indium-Zinc-Oxide Thin-Film TransistorsPark, J C et al. | 2012
- 812
-
A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain OffsetsLee, U G et al. | 2012
- 815
-
Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage MethodCho, I-T et al. | 2012
- 818
-
Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active LayersPark, J C et al. | 2012
- 821
-
Comparison of Electrical Properties and Bias Stability of Double-Gate a-HIZO TFTs According to TFT StructureLee, Y W et al. | 2012
- 824
-
Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV ExposureMativenga, M et al. | 2012
- 827
-
Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped AluminumLan, L et al. | 2012
- 830
-
Characteristics of a Smiling Polysilicon Thin-Film TransistorLin, J-T et al. | 2012
- 833
-
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire ChannelsKuo, C-H et al. | 2012
- 836
-
Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc-Tin-Silicon-Oxide Barrier LayerSundholm, E S et al. | 2012
- 839
-
Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash ArrayWang, K-T et al. | 2012
- 842
-
Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFTLiu, T C et al. | 2012
- 845
-
Extraction Method of Trap Densities in TFTs Combining C-V and F-E MethodsKimura, M et al. | 2012
- 848
-
Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked SiO2 Electrolyte/Chitosan Hybrid DielectricsDou, W et al. | 2012
- 851
-
Electrical Properties of the Thin-Film Transistor With an Indium-Gallium-Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure DepositionFuruta, M et al. | 2012
- 854
-
Optoelectronics, Display, Imaging - High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron EmittersRyu, K et al. | 2012
- 857
-
Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical ArraysWei, T B et al. | 2012
- 860
-
Solid-State Power and High-Voltage Devices - Bidirectional Devices for Automotive-Grade Electrostatic Discharge ApplicationsSalcedo, J A et al. | 2012
- 863
-
Materials, Processing, and Packaging - Diffusion of Water Molecules in Amorphous SilicaKostinski, S et al. | 2012
- 866
-
p-Type Electrical Transport of Chemically Doped Epitaxial Graphene NanoribbonsBryan, S E et al. | 2012
- 869
-
In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed TiOxJung, S et al. | 2012
- 872
-
Electroplated Ni-CNT Nanocomposite for Micromechanical Resonator ApplicationsLee, Y-C et al. | 2012
- 875
-
Operating TSV in Stable Accumulation Capacitance Region by Utilizing A12O3-Induced Negative Fixed ChargeZhang, L et al. | 2012
- 878
-
Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline-TiO2/SiO2 Stacked InsulatorWu, J-R et al. | 2012
- 881
-
Solid-State Device Phenomena - Effects of a Load Resistor on Conducting Filament Characteristics and Unipolar Resistive Switching Behaviors in a Pt/NiO/Pt StructureHwang, I et al. | 2012
- 884
-
Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG DevicesLiang, Q et al. | 2012
- 887
-
Enhanced Field Electron Emission From Zinc-Doped CuO NanowiresTsai, T-Y et al. | 2012
- 890
-
Coexistence of Memristive Behaviors and Negative Capacitance Effects in Single-Crystal Ti02 Thin-Film-Based DevicesHu, P et al. | 2012
- 893
-
Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection ApplicationsMiao, M et al. | 2012
- 896
-
A New Recess Method for SA-STI NAND Flash MemoryWang, Z-S et al. | 2012
- 899
-
Molecular and Organic Devices - Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film TransistorsHa, T-J et al. | 2012
- 902
-
Sensors and Actuators - Fabrication of Sensitivity Tunable Flexible Force Sensor via Spray Coating of Graphite InkAkter, T et al. | 2012
- 905
-
Nanocrystalline Si-Based Resistive Humidity Sensors Prepared via HWCVD at Various Filament TemperaturesHsueh, T J et al. | 2012
- 908
-
A Fully Passive Wireless Backscattering Neurorecording Microsystem Embedded in Dispersive Human-Head Phantom MediumSchwerdt, H N et al. | 2012
- 911
-
IEEE ELECTRON DEVICES SOCIETY MEETINGS CALENDAR| 2012
- 913
-
Information for Authors| 2012
- 914
-
ANNOUNCEMENTS - Call for Papers — IEEE TRANSACTIONS ON ELECTRON DEVICES Special Issue on Advanced Modeling of Power Devices and Their Applications| 2012