The Dependence of Retention Time on Gate Length in UTBOX FBBRAM With Different Source/Drain Junction Engineering (Englisch)
- Neue Suche nach: Nicoletti, T
- Neue Suche nach: Nicoletti, T
- Neue Suche nach: Aoulaiche, M
- Neue Suche nach: Almeida, L M
- Neue Suche nach: dos Santos, S D
- Neue Suche nach: Martino, J A
- Neue Suche nach: Veloso, A
- Neue Suche nach: Jurczak, M
- Neue Suche nach: Simoen, E
- Neue Suche nach: Claeys, C
In:
IEEE electron device letters
;
33
, 7
; 940-943
;
2012
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:The Dependence of Retention Time on Gate Length in UTBOX FBBRAM With Different Source/Drain Junction Engineering
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Beteiligte:Nicoletti, T ( Autor:in ) / Aoulaiche, M / Almeida, L M / dos Santos, S D / Martino, J A / Veloso, A / Jurczak, M / Simoen, E / Claeys, C
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Erschienen in:IEEE electron device letters ; 33, 7 ; 940-943
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2012
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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