Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model (Englisch)
- Neue Suche nach: Schwarz, M
- Neue Suche nach: Schwarz, M
- Neue Suche nach: Holtij, T
- Neue Suche nach: Kloes, A
- Neue Suche nach: Iñíguez, B
In:
IEEE transactions on electron devices
;
60
, 2
; 884-886
;
2013
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 60, 2 ; 884-886
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2013
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Datenquelle:
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