Ultrathin layer transfer technology for post-Si semiconductors (Englisch)
- Neue Suche nach: Maeda, Tatsuro
- Neue Suche nach: Maeda, Tatsuro
- Neue Suche nach: Ishii, Hiroyuki
- Neue Suche nach: Itatani, Taro
- Neue Suche nach: Mieda, Eiko
- Neue Suche nach: Jevasuwan, Wipakorn
- Neue Suche nach: Kurashima, Yuichi
- Neue Suche nach: Takagi, Hideki
- Neue Suche nach: Yasuda, Tetsuji
- Neue Suche nach: Takada, Tomoyuki
- Neue Suche nach: Yamamoto, Taketsugu
- Neue Suche nach: Aoki, Takeshi
- Neue Suche nach: Osada, Takenori
- Neue Suche nach: Ichikawa, Osamu
- Neue Suche nach: Hata, Masahiko
In:
Microelectronic engineering
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109
; 133-136
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2013
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Ultrathin layer transfer technology for post-Si semiconductors
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Beteiligte:Maeda, Tatsuro ( Autor:in ) / Ishii, Hiroyuki / Itatani, Taro / Mieda, Eiko / Jevasuwan, Wipakorn / Kurashima, Yuichi / Takagi, Hideki / Yasuda, Tetsuji / Takada, Tomoyuki / Yamamoto, Taketsugu
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Erschienen in:Microelectronic engineering ; 109 ; 133-136
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2013
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 535/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 109
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structureJasiński, Jakub / Mazurak, Andrzej / Majkusiak, Bogdan et al. | 2013
- 5
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Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMsIevtukh, V. / Nazarov, A. / Turchanikov, V. / Lysenko, V. / Nassiopoulou, A. et al. | 2013
- 10
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Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structuresBae, Sung-Bum / Kim, Ki-Won / Lee, Yong Soo / Lee, Jung-Hee / Bae, Youngho / Cristoloveanu, Sorin et al. | 2013
- 13
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X-ray and photoelectron spectroscopic nondestructive methods for thin films and interfaces study. Application to SrTiO3 based heterostucturesFilatova, E.O. / Kozhevnikov, I.V. / Sokolov, A.A. / Yegorova, Yu V. / Konashuk, A.S. / Vilkov, O.Yu / Schaefers, F. / Gorgoi, M. / Shulakov, A.S. et al. | 2013
- 17
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Improved programming and erasing speeds of poly-Si flash memory device by HfO2/Si3N4 bandgap-engineered trapping layerChen, Chun-Yuan / Chang-Liao, Kuei-Shu / Ho, Hao-Wei / Wang, Tien-Ko et al. | 2013
- 21
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Electronic structure of oxygen vacancies in hafnium oxidePerevalov, T.V. / Aliev, V.Sh. / Gritsenko, V.A. / Saraev, A.A. / Kaichev, V.V. et al. | 2013
- 24
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Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTsWang, Cong / Cho, Sung-Jin / Kim, Nam-Young et al. | 2013
- 28
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Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacksChang, C.-Y. / Yokoyama, M. / Kim, S.-H. / Ichikawa, O. / Osada, T. / Hata, M. / Takenaka, M. / Takagi, S. et al. | 2013
- 31
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Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperaturesTyagulskii, I.P. / Tyagulskii, S.I. / Nazarov, A.N. / Lysenko, V.S. / Cherkaoui, K. / Hurley, P.K. et al. | 2013
- 35
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Gate-first n-MOSFET with a sub-0.6-nm EOT gate stackCheng, C.H. / Chou, K.I. / Chin, A. et al. | 2013
- 39
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Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimizationTang, Baojun / Toledano-Luque, M. / Zhang, W.D. / Van den bosch, G. / Degraeve, R. / Zhang, J.F. / Van Houdt, J. et al. | 2013
- 43
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Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structureMa, J. / Zhang, J.F. / Ji, Z. / Benbakhti, B. / Duan, M. / Zhang, W. / Zheng, X.F. / Mitard, J. / Kaczer, B. / Groeseneken, G. et al. | 2013
- 46
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Si cap passivation for Ge nMOS applicationsSioncke, S. / Vanherle, W. / Art, W. / Ceuppens, J. / Ivanov, Ts. / Lin, D. / Nyns, L. / Delabie, A. / Conard, T. / Struyf, H. et al. | 2013
- 50
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Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional studyColleoni, Davide / Pasquarello, Alfredo et al. | 2013
- 54
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Stress induced defect generation implications of doping HfO2 with AlO’Connor, R. / Kauerauf, T. / Arimura, H. / Ragnarsson, L.A. et al. | 2013
- 57
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Charge trapping and electrical degradation in atomic layer deposited Al2O3 filmsGonzalez, M.B. / Rafí, J.M. / Beldarrain, O. / Zabala, M. / Campabadal, F. et al. | 2013
- 60
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Defect energy levels of the As–As dimer at InGaAs/oxide interfaces: A first principles studyMiceli, Giacomo / Pasquarello, Alfredo et al. | 2013
- 64
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Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer depositionLi, Chen-Chien / Chang-Liao, Kuei-Shu / Fu, Chung-Hao / Hsieh, Tsung-Lin / Chen, Li-Ting / Liao, Yu-Liang / Lu, Chun-Chang / Wang, Tien-Ko et al. | 2013
- 68
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Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculationsEl-Sayed, Al-Moatasem / Watkins, Matthew B. / Shluger, Alexander L. / Afanas’ev, Valeri V. et al. | 2013
- 72
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Electronic structure of lanthanide oxide high K gate oxidesGillen, R. / Robertson, J. et al. | 2013
- 75
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Microscopy study of the conductive filament in HfO2 resistive switching memory devicesPrivitera, S. / Bersuker, G. / Butcher, B. / Kalantarian, A. / Lombardo, S. / Bongiorno, C. / Geer, R. / Gilmer, D.C. / Kirsch, P.D. et al. | 2013
- 79
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Trap density characterization through low-frequency noise in junctionless transistorsDoria, Rodrigo Trevisoli / Trevisoli, Renan Doria / de Souza, Michelly / Pavanello, Marcelo Antonio et al. | 2013
- 83
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Resistive switching effect on Al2O3/InGaAs stacksPalumbo, F. / Shekhter, P. / Krylov, I. / Ritter, D. / Eizenberg, M. et al. | 2013
- 87
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Novel multi-bit memory device using metal/PVDF–TrFE/graphene stackHwang, Hyeon Jun / Yang, Jin Ho / Kang, Soo Cheol / Cho, Chunhum / Kang, Chang Goo / Lee, Young Gon / Lee, Byoung Hun et al. | 2013
- 90
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Identification of the (√E +1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level testsChery, E. / Federspiel, X. / Roy, D. / Volpi, F. / Chaix, J.-M. et al. | 2013
- 94
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Investigation of MOSC conductance spectra by MPAS techniqueGutt, T. / Przewłocki, H.M. et al. | 2013
- 97
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Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfacesZhang, R. / Lin, J.C. / Yu, X. / Takenaka, M. / Takagi, S. et al. | 2013
- 101
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Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistorsShahabuddin, S. / Soin, N. / Goh, K.K. / Abdul Wahab, Y. / Hussin, H. et al. | 2013
- 105
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RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM applicationde Andrade, Maria Glória Caño / Toledano-Luque, María / Fourati, Fatma / Degraeve, Robin / Martino, João Antonio / Claeys, Cor / Simoen, Eddy / Van den Bosch, Geert / Van Houdt, Jan et al. | 2013
- 109
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Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on SiNichau, A. / Schäfer, A. / Knoll, L. / Wirths, S. / Schram, T. / Ragnarsson, L.-Å. / Schubert, J. / Bernardy, P. / Luysberg, M. / Besmehn, A. et al. | 2013
- 113
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Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of siliconKalkofen, Bodo / Amusan, Akinwumi A. / Lisker, Marco / Burte, Edmund P. et al. | 2013
- 117
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Barrier engineering for double layer CVD graphene tunnel FETsRoy, T. / Hesabi, Z.R. / Joiner, C.A. / Fujimoto, A. / Vogel, E.M. et al. | 2013
- 120
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Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatmentWang, Jer-Chyi / Chen, Chia-Hsin / Liu, Hsiang-Yu / Lin, Chih-Ting / Lu, Hsin-Chun et al. | 2013
- 123
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Gate current random telegraph noise and single defect conductionKaczer, B. / Toledano-Luque, M. / Goes, W. / Grasser, T. / Groeseneken, G. et al. | 2013
- 126
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Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al depositionMather, S. / Sedghi, N. / Althobaiti, M. / Mitrovic, I.Z. / Dhanak, V. / Chalker, P.R. / Hall, S. et al. | 2013
- 129
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Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundariesIglesias, V. / Martin-Martinez, J. / Porti, M. / Rodriguez, R. / Nafria, M. / Aymerich, X. / Erlbacher, T. / Rommel, M. / Murakami, K. / Bauer, A.J. et al. | 2013
- 133
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Ultrathin layer transfer technology for post-Si semiconductorsMaeda, Tatsuro / Ishii, Hiroyuki / Itatani, Taro / Mieda, Eiko / Jevasuwan, Wipakorn / Kurashima, Yuichi / Takagi, Hideki / Yasuda, Tetsuji / Takada, Tomoyuki / Yamamoto, Taketsugu et al. | 2013
- 137
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Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical propertiesHosoi, Takuji / Hideshima, Iori / Tanaka, Ryohei / Minoura, Yuya / Yoshigoe, Akitaka / Teraoka, Yuden / Shimura, Takayoshi / Watanabe, Heiji et al. | 2013
- 142
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Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memoriesJuan, P.C. / Sun, C.L. / Liu, C.H. / Lin, C.L. / Mong, F.C. / Huang, J.H. / Chang, H.S. et al. | 2013
- 148
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Optimized electrode and interface for enhanced reliability of high-k based metal–insulator–metal capacitorsKoch, Johannes / Seidel, Konrad / Weinreich, Wenke / Riedel, Stefan / Chiang, Jung-Chin / Beyer, Volkhard et al. | 2013
- 152
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Epitaxial thin films of BaSrO as gate dielectricIslam, S. / Müller-Sajak, D. / Hofmann, K.R. / Pfnür, H. et al. | 2013
- 156
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Control of metal/oxide electron barriers in CBRAM cells by low work-function linersDe Stefano, F. / Afanas’ev, V.V. / Houssa, M. / Stesmans, A. / Opsomer, K. / Jurczak, M. / Goux, L. et al. | 2013
- 160
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Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devicesLee, Seok-Hee / Choi, Rino / Choi, Changhwan et al. | 2013
- 163
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Modeling thermal effects in nano-devicesVasileska, Dragica et al. | 2013
- 168
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MOSFET layout modifications for hump effect removalCarmona, M. / Rebuffat, B. / Delalleau, J. / Gagliano, O. / Lopez, L. / Ogier, J.-L. / Goguenheim, D. et al. | 2013
- 172
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The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structuresJuan, P.C. / Liu, C.H. / Lin, C.L. / Mong, F.C. / Huang, J.H. et al. | 2013
- 177
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Statistical insight into controlled forming and forming free stacks for HfOx RRAMRaghavan, N. / Fantini, A. / Degraeve, R. / Roussel, P.J. / Goux, L. / Govoreanu, B. / Wouters, D.J. / Groeseneken, G. / Jurczak, M. et al. | 2013
- 182
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Electrically active interface defects in the In0.53Ga0.47As MOS systemDjara, V. / O’Regan, T.P. / Cherkaoui, K. / Schmidt, M. / Monaghan, S. / O’Connor, É. / Povey, I.M. / O’Connell, D. / Pemble, M.E. / Hurley, P.K. et al. | 2013
- 189
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Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistorsPark, Sung Min / Lee, Dong Hee / Lim, You Sung / Kim, Dae Kuk / Yi, Moonsuk et al. | 2013
- 193
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Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminateChakrabarti, B. / Vogel, E.M. et al. | 2013
- 197
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Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interfaceSuwa, Tomoyuki / Teramoto, Akinobu / Nagata, Kohki / Ogura, Atsushi / Nohira, Hiroshi / Muro, Takayuki / Kinoshita, Toyohiko / Sugawa, Shigetoshi / Ohmi, Tadahiro / Hattori, Takeo et al. | 2013
- 200
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Influence of La on the electrical properties of HfSiON: From diffusion to V th shiftsHackenberg, M. / Pichler, P. / Baudot, S. / Essa, Z. / Gro-Jean, M. / Tavernier, C. / Schamm-Chardon, S. et al. | 2013
- 204
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Interface engineering of Ge using thulium oxide: Band line-up studyMitrovic, I.Z. / Althobaiti, M. / Weerakkody, A.D. / Sedghi, N. / Hall, S. / Dhanak, V.R. / Chalker, P.R. / Henkel, C. / Dentoni Litta, E. / Hellström, P.-E. et al. | 2013
- 208
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Defect densities inside the conductive filament of RRAMsRobertson, J. / Gillen, R. et al. | 2013
- 211
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Defects at Ge/oxide and III–V/oxide interfacesVan de Walle, C.G. / Choi, M. / Weber, J.R. / Lyons, J.L. / Janotti, A. et al. | 2013
- 216
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High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structureWu, Min-Lin / Wu, Yung-Hsien / Lyu, Rong-Jhe / Chao, Chun-Yen / Wu, Chao-Yi / Lin, Chia-Chun / Chen, Lun-Lun et al. | 2013
- 220
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High-k gadolinium and aluminum scandates for hybrid floating gate NAND flashLisoni, Judit G. / Breuil, Laurent / Nyns, Laura / Blomme, Pieter / Van den bosch, Geert / Van Houdt, Jan et al. | 2013
- 223
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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatmentsSan Andrés, Enrique / Pampillón, María Ángela / Feijoo, Pedro Carlos / Pérez, Raúl / Cañadilla, Carmina et al. | 2013
- 227
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Structural, ferroelectric, electronic and transport properties of BaTiO3/Pt heterostructures grown on MgO(001)Minnekaev, M. / Bulakh, K. / Chouprik, A. / Drube, W. / Ershov, P. / Lebedinskii, Yu. / Maksimova, K. / Zenkevich, A. et al. | 2013
- 232
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Mobility spectrum analysis of carrier transport at insulator/semiconductor interfacesUmana-Membreno, G.A. / Antoszewski, J. / Faraone, L. et al. | 2013
- 236
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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidationPampillón, María Ángela / Feijoo, Pedro Carlos / San Andrés, Enrique et al. | 2013
- 240
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Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ =2.0–2.5)Stesmans, A. / Nguyen, A.P.D. / Houssa, M. / Afanas’ev, V.V. / Tőkei, Zs. / Baklanov, M.R. et al. | 2013
- 244
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Defects at Ge:GeO2 and Ge:MeOx interfacesLi, H. / Robertson, J. et al. | 2013
- 250
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Superior reliability of high mobility (Si)Ge channel pMOSFETsFranco, J. / Kaczer, B. / Toledano-Luque, M. / Roussel, Ph.J. / Cho, M. / Kauerauf, T. / Mitard, J. / Eneman, G. / Witters, L. / Grasser, T. et al. | 2013
- 257
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Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stressMeneghesso, G. / Meneghini, M. / Stocco, A. / Bisi, D. / de Santi, C. / Rossetto, I. / Zanandrea, A. / Rampazzo, F. / Zanoni, E. et al. | 2013
- 262
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Construction of atomic-scale logic gates on a surface of hydrogen passivated germaniumKolmer, Marek / Godlewski, Szymon / Lis, Jakub / Such, Bartosz / Kantorovich, Lev / Szymonski, Marek et al. | 2013
- 266
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Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scalingHan, J.-H. / Zhang, R. / Osada, T. / Hata, M. / Takenaka, M. / Takagi, S. et al. | 2013
- 270
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Transformation of a metal–insulator-silicon structure into a resonant-tunneling diodeKareva, G.G. / Vexler, M.I. / Illarionov, Yu.Yu. et al. | 2013
- 274
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Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfacesGuo, Yuzheng / Robertson, John et al. | 2013
- 278
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Analysis of metal insulator transitions in VO2 and V2O3 for RRAMsGuo, Yuzheng / Robertson, John et al. | 2013
- 282
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Understanding Ge impact on VT and VFB in Si1− xGex/Si pMOSFETsSoussou, A. / Leroux, C. / Rideau, D. / Toffoli, A. / Romano, G. / Saxod, O. / Bidal, G. / Barge, D. / Pellissier-Tanon, D. / Abbate, F. et al. | 2013
- 286
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Ab initio validation of continuum models parametrizations for ultrascaled SOI interfacesBiel, Blanca / Donetti, Luca / Godoy, Andres / Gámiz, Francisco et al. | 2013
- 290
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Epitaxial ferroelectric oxides on semiconductors- A route towards negative capacitance devicesDroopad, R. / Contreras-Guerrero, R. / Veazey, J.P. / Qiao, Q. / Klie, R.F. / Levy, J. et al. | 2013
- 294
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Point defects in thermal GaAs/GaAs-oxide structures probed by electron paramagnetic resonanceNguyen, S. / Stesmans, A. / Afanas’ev, V.V. et al. | 2013
- 298
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Stress induced leakage current generated by hot-hole injectionTeramoto, Akinobu / Park, Hyeonwoo / Inatsuka, Takuya / Kuroda, Rihito / Sugawa, Shigetoshi / Ohmi, Tadahiro et al. | 2013
- 302
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The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devicesLi, Yiming / Su, Hsin-Wen / Chen, Yu-Yu / Hsu, Sheng-Chia / Huang, Wen-Tsung et al. | 2013
- 306
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Gate-last integration on planar FDSOI for low-V Tp and low-EOT MOSFETsMorvan, S. / Andrieu, F. / Leroux, C. / Garros, X. / Cassé, M. / Martin, F. / Gassilloud, R. / Morand, Y. / Le Royer, C. / Besson, P. et al. | 2013
- 310
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A computational study of Si–H bonds as precursors for neutral centres in amorphous silica and at the Si/SiO2 interfaceLing, Sanliang / El-Sayed, Al-Moatasem / Lopez-Gejo, Francisco / Watkins, Matthew B. / Afanas’ev, V.V. / Shluger, Alexander L. et al. | 2013
- 310
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A computational study of Si–H bonds as precursors for neutral Formula Not Shown centres in amorphous silica and at the Si/SiO2 interfaceLing, S. / El-Sayed, A. M. / Lopez-Gejo, F. / Watkins, M. B. / Afanas’ev, V. V. / Shluger, A. L. et al. | 2013
- 310
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A computational study of Si–H bonds as precursors for neutral centres in amorphous silica and at the Si/SiO2 interfaceLing, Sanliang et al. | 2013
- 314
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Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging componentsToledano-Luque, M. / Kaczer, B. / Aoulaiche, M. / Spessot, A. / Roussel, Ph.J. / Ritzenthaler, R. / Schram, T. / Thean, A. / Groeseneken, G. et al. | 2013
- 318
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The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFMCelano, Umberto / Chintala, Ravi Chandra / Adelmann, Christoph / Richard, Olivier / Vandervorst, Wilfried et al. | 2013
- 322
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Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdownMiranda, E. / Kawanago, T. / Kakushima, K. / Suñé, J. / Iwai, H. et al. | 2013
- 326
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Electron mobility in heavily doped junctionless nanowire SOI MOSFETsRudenko, T. / Nazarov, A. / Yu, R. / Barraud, S. / Cherkaoui, K. / Razavi, P. / Fagas, G. et al. | 2013
- 330
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FinFETs with ONO BOX for multi-bit unified memoryChang, Sung-Jae / Bawedin, Maryline / Xiong, Wade / Lee, Jong-Hyun / Lee, Jung-Hee / Cristoloveanu, Sorin et al. | 2013
- 334
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Sheet resistance measurement on AlGaN/GaN wafers and dispersion studyLehmann, J. / Leroux, C. / Charles, M. / Torres, A. / Morvan, E. / Blachier, D. / Ghibaudo, G. / Bano, E. / Reimbold, G. et al. | 2013
- 338
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Modeling, simulation and design of the vertical Graphene Base TransistorDriussi, F. / Palestri, P. / Selmi, L. et al. | 2013
- 342
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Multilevel resistive switching in ternary HfxAl1− xOy oxide with graded Al depth profileMarkeev, A. / Chouprik, A. / Egorov, K. / Lebedinskii, Yu. / Zenkevich, A. / Orlov, O. et al. | 2013
- 346
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The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devicesBradley, Samuel R. / McKenna, Keith P. / Shluger, Alexander L. et al. | 2013
- 351
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The race of phase change memories to nanoscale storage and applicationsLacaita, Andrea L. / Redaelli, Andrea et al. | 2013
- 357
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Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devicesChen, Chien-Hung / Li, Yiming / Chen, Chieh-Yang / Chen, Yu-Yu / Hsu, Sheng-Chia / Huang, Wen-Tsung / Chu, Sheng-Yuan et al. | 2013
- 360
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Selector-less RRAM with non-linearity of device for cross-point array applicationsWoo, Jiyong / Lee, Daeseok / Choi, Godeuni / Cha, Euijun / Kim, Seonghyun / Lee, Wootae / Park, Sangsu / Hwang, Hyunsang et al. | 2013
- 364
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectricsShubhakar, Kalya / Pey, Kin Leong / Raghavan, Nagarajan / Kushvaha, Sunil Singh / Bosman, Michel / Wang, Zhongrui / O’Shea, Sean Joseph et al. | 2013
- 370
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First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substratesLucovsky, G. / Kim, J.W. / Nordlund, D. et al. | 2013
- 374
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Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal–insulator-metal devicesLin, Chia-Chun / Wu, Yung-Hsien / Hung, Tung-Hsuan / Hou, Chin-Yao et al. | 2013
- 378
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AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALDMeunier, R. / Torres, A. / Morvan, E. / Charles, M. / Gaud, P. / Morancho, F. et al. | 2013
- 381
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Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectricsLehmann, J. / Hübner, R. / Borany, J.V. / Skorupa, W. / Mikolajick, T. / Schäfer, A. / Schubert, J. / Mantl, S. et al. | 2013
- 385
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Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAMLee, Daeseok / Woo, Jiyong / Cha, Euijun / Kim, Seonghyun / Lee, Wootae / Park, Sangsu / Hwang, Hyunsang et al. | 2013
- 389
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Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device propertiesTakagi, Shinichi / Zhang, Rui / Takenaka, Mitsuru et al. | 2013
- 396
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Author Index| 2013
- IFC
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Inside Front Cover - Editorial Board| 2013
- v
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Table of Contents| 2013
- xi
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Preface| 2013