Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure (Englisch)
- Neue Suche nach: Luo, D
- Neue Suche nach: Luo, D
- Neue Suche nach: Xu, H
- Neue Suche nach: Li, M
- Neue Suche nach: Tao, H
- Neue Suche nach: Wang, L
- Neue Suche nach: Peng, J
- Neue Suche nach: Xu, M
In:
IEEE transactions on electron devices
;
61
, 1
; 92-97
;
2014
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 61, 1 ; 92-97
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2014
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Datenquelle:
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