Correlational Study Between SiN Etch Rate and Plasma Impedance in Electron Cyclotron Resonance Plasma Etcher for Advanced Process Control (Englisch)
- Neue Suche nach: Ohmori, Takeshi
- Neue Suche nach: Ohmori, Takeshi
- Neue Suche nach: Kashibe, Makoto
- Neue Suche nach: Une, Satoshi
- Neue Suche nach: Yamamoto, Koichi
- Neue Suche nach: Shiraishi, Daisuke
- Neue Suche nach: Inoue, Satomi
In:
IEEE transactions on semiconductor manufacturing
;
28
, 3
; 236-240
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Correlational Study Between SiN Etch Rate and Plasma Impedance in Electron Cyclotron Resonance Plasma Etcher for Advanced Process Control
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Beteiligte:Ohmori, Takeshi ( Autor:in ) / Kashibe, Makoto / Une, Satoshi / Yamamoto, Koichi / Shiraishi, Daisuke / Inoue, Satomi
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Erschienen in:IEEE transactions on semiconductor manufacturing ; 28, 3 ; 236-240
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2015
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.56 / 53.56
- Weitere Informationen zu Basisklassifikation
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Datenquelle:
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Front cover| 2015
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IEEE Transactions on Semiconductor Manufacturing publication information| 2015
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