Characterization of leakage and reliability of SiN.sub.x.gate dielectric by low-pressure chemical vapor deposition for gan-based MIS-HEMTs (Englisch)
- Neue Suche nach: Mengyuan Hua
- Neue Suche nach: Mengyuan Hua
- Neue Suche nach: Chen, K.J
- Neue Suche nach: Baoshun Zhang
- Neue Suche nach: Yong Cai
- Neue Suche nach: Zhihua Dong
- Neue Suche nach: Kai Fu
- Neue Suche nach: Shenghou Liu
- Neue Suche nach: Shu Yang
- Neue Suche nach: Cheng Liu
In:
IEEE transactions on electron devices
;
62
, 10
; 3215
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Characterization of leakage and reliability of SiN.sub.x.gate dielectric by low-pressure chemical vapor deposition for gan-based MIS-HEMTs
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Beteiligte:Mengyuan Hua ( Autor:in ) / Chen, K.J / Baoshun Zhang / Yong Cai / Zhihua Dong / Kai Fu / Shenghou Liu / Shu Yang / Cheng Liu
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Erschienen in:IEEE transactions on electron devices ; 62, 10 ; 3215
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2015
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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