Upscaling of the Inkjet Printing Process for the Manufacturing of Passive Electronic Devices (Englisch)
- Neue Suche nach: Sternkiker, Christoph
- Neue Suche nach: Sternkiker, Christoph
- Neue Suche nach: Sowade, Enrico
- Neue Suche nach: Mitra, Kalyan Yoti
- Neue Suche nach: Zichner, Ralf
- Neue Suche nach: Baumann, Reinhard R
In:
IEEE transactions on electron devices
;
63
, 1
; 426-431
;
2016
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Upscaling of the Inkjet Printing Process for the Manufacturing of Passive Electronic Devices
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Beteiligte:Sternkiker, Christoph ( Autor:in ) / Sowade, Enrico / Mitra, Kalyan Yoti / Zichner, Ralf / Baumann, Reinhard R
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Erschienen in:IEEE transactions on electron devices ; 63, 1 ; 426-431
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2016
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 63, Ausgabe 1
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Table of contents| 2016
- 5
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Introduction to the Special Issue on Solid-State SensorsTheuwissen, Albert J. P et al. | 2016
- 10
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Effect and Limitation of Pinned PhotodiodeTeranishi, Nobukazu et al. | 2016
- 16
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A Review of CMOS Photodiode Modeling and the Role of the Lateral PhotoresponseBlanco-Filgueira, Beatriz et al. | 2016
- 26
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Interpreting Activation Energies in Digital Image SensorsDunlap, Justin C et al. | 2016
- 32
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A Charge Transfer Model for CMOS Image SensorsHan, Liqiang et al. | 2016
- 42
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A Potential-Based Characterization of the Transfer Gate in CMOS Image SensorsXu, Yang et al. | 2016
- 49
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Device Simulations for Ultrahigh-Speed and High-Voltage Image SensorsMutoh, Hideki et al. | 2016
- 57
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Nonuniformity Analysis of a 65-kpixel CMOS SPAD ImagerAntolovic, Ivan Michel et al. | 2016
- 65
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A Low Dark Count p-i-n Diode Based SPAD in CMOS TechnologyVeerappan, Chockalingam et al. | 2016
- 72
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Temporal Readout Noise Analysis and Reduction Techniques for Low-Light CMOS Image SensorsBoukhayma, Assim et al. | 2016
- 79
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TiO2-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis TechniqueLiu, Han-Yin et al. | 2016
- 86
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High-Sensitivity Image Sensors Overlaid With Thin-Film Gallium Oxide/Crystalline Selenium Heterojunction PhotodiodesImura, Shigeyuki et al. | 2016
- 92
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CMOS-Compatible PureGaB Ge-on-Si APD Pixel ArraysSammak, Amir et al. | 2016
- 100
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A 2.5 pJ/b Binary Image Sensor as a Pathfinder for Quanta Image SensorsMasoodian, Saleh et al. | 2016
- 106
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CMOS Global Shutter Charge Storage Pixels With Improved PerformanceVelichko, Sergey et al. | 2016
- 113
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Design and Characterization of Enhanced Angle Sensitive PixelsSivaramakrishnan, Sriram et al. | 2016
- 120
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Enhanced Near-Infrared Response CMOS Image Sensors Using High-Resistivity Substrate: Photodiodes Design Impact on PerformancesLincelles, Jean-Baptiste et al. | 2016
- 128
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3-D-Stacked 16-Mpixel Global Shutter CMOS Image Sensor Using Reliable In-Pixel Four Million Microbump Interconnections With 7.6- $\mu \text{m}$ PitchKondo, Toru et al. | 2016
- 138
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A Fast-Gated CMOS Image Sensor With a Vertical Overflow Drain Shutter MechanismTadmor, Erez et al. | 2016
- 145
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Linear-Mode Gain-Modulated Avalanche Photodiode Image Sensor for Time-of-Flight Optical RangingShcherbakova, Olga et al. | 2016
- 153
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A 1.7-in, 33-Mpixel, 120-frames/s CMOS Image Sensor With Depletion-Mode MOS Capacitor-Based 14-b Two-Stage Cyclic A/D ConvertersYasue, Toshio et al. | 2016
- 162
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A Column-Parallel Inverter-Based Cyclic ADC for CMOS Image Sensor With Capacitance and Clock ScalingTang, Fang et al. | 2016
- 168
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A Low-Noise and Area-Efficient PWM- \Delta \Sigma ADC Using a Single-Slope Quantizer for CMOS Image SensorsJo, Yun-Rae et al. | 2016
- 168
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A Low-Noise and Area-Efficient PWM-[Formula Omitted] ADC Using a Single-Slope Quantizer for CMOS Image SensorsYun-Rae Jo et al. | 2016
- 174
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A 47 Million Pixel High-Performance Interline CCD Image SensorWang, Shen et al. | 2016
- 182
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A Submillimeter Range Resolution Time-of-Flight Range Imager With Column-Wise Skew CalibrationYasutomi, Keita et al. | 2016
- 189
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A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta ImagingDutton, Neale A. W et al. | 2016
- 197
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X-Ray Detector-on-Plastic With High Sensitivity Using Low Cost, Solution-Processed Organic PhotodiodesGelinck, Gerwin H et al. | 2016
- 205
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Fully 3-D Integrated Pixel Detectors for X-RaysDeptuch, Grzegorz W et al. | 2016
- 215
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An Implantable CMOS Image Sensor With Self-Reset Pixels for Functional Brain ImagingSasagawa, Kiyotaka et al. | 2016
- 223
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III-V Nanowire Transistors for Low-Power Logic Applications: A Review and OutlookZhang, Chen et al. | 2016
- 235
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Recent Developments and Design Challenges of High-Performance Ring Oscillator CMOS Time-to-Digital ConvertersCheng, Zeng et al. | 2016
- 252
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Assessment of Rear-Surface Processing Strategies for III-V on Si Multijunction Solar Cells Based on Numerical SimulationsMartin-Martin, Diego et al. | 2016
- 259
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Gate Engineering to Improve Effective Resistance of 28-nm High- k Metal Gate CMOS DevicesJeong, JinHyuk et al. | 2016
- 265
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Diffusion and Gate Replacement: A New Gate-First High- k /Metal Gate CMOS Integration Scheme Suppressing Gate Height AsymmetryRitzenthaler, Romain et al. | 2016
- 272
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Bond-Pad Charging Protection Design for Charging-Free Reference Transistor Test StructuresLin, Wallace et al. | 2016
- 280
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A Thermal-Aware Device Design Considerations for Nanoscale SOI and Bulk FinFETsKumar, Ulayil Sajesh et al. | 2016
- 288
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Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian DopingAhish, Shylendra et al. | 2016
- 296
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Physical Basis for CMOS SCR Compact ModelsMertens, Robert et al. | 2016
- 303
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Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FETWang, Hongjuan et al. | 2016
- 311
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Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling TransistorsLiu, Fei et al. | 2016
- 318
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Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility TransistorsJoglekar, Sameer et al. | 2016
- 326
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Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped BufferAxelsson, Olle et al. | 2016
- 333
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Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth ProcessBergsten, Johan et al. | 2016
- 339
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Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III-V-on-Insulator nMOSFETsShen, Hsin-Hung et al. | 2016
- 345
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Comparison of the AlxGa1-xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon SubstratesDolmanan, Surani Bin et al. | 2016
- 353
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Room Temperature Direct and Heterodyne Detection of 0.28-0.69-THz Waves Based on GaN 2-DEG Unipolar NanochannelsDaher, Carlos et al. | 2016
- 360
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HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio CalculationsPerniola, Luca et al. | 2016
- 369
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Effects of Localized Back-Surface Defects on Bulk and Front-Channel Conduction of Amorphous InGaZnO TFTsHsu, Chih-Chieh et al. | 2016
- 377
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Near-Infrared Detection Using Pulsed Tunneling Junction in Silicon DevicesKim, HuiJung et al. | 2016
- 384
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Characterization of Ambient Light-Induced Inversion Current in MOS(n) Tunneling Diode With Enhanced Oxide Thickness-Dependent PerformanceLin, Yen-Kai et al. | 2016
- 390
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Effects of Diode Voltage and Thermal Resistance on the Performance of Multichip LED ModulesWang, Chien-Ping et al. | 2016
- 394
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Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power ConsumptionKim, Kyeong-Ah et al. | 2016
- 402
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A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Roll-to-Roll ManufacturingTsujimura, Takatoshi et al. | 2016
- 408
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Estimation of Optical Power and Heat-Dissipation Factor of Low-Power SMD LED as a Function of Injection Current and Ambient TemperatureRaypah, Muna E et al. | 2016
- 414
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4H-SiC p-i-n diode as Highly Linear Temperature SensorRao, Sandro et al. | 2016
- 419
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Vertical GaN Power Diodes With a Bilayer Edge TerminationDickerson, Jeramy R et al. | 2016
- 426
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Upscaling of the Inkjet Printing Process for the Manufacturing of Passive Electronic DevicesSternkiker, Christoph et al. | 2016
- 432
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Thermal Conductivity and Interface Thermal Conductance of Titanium Silicide Films on SiJagannadham, Kasichainula et al. | 2016
- 439
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High-Performance On-Chip Low-Pass Filters Using CPW and Slow-Wave-CPW Transmission Lines on Porous SiliconSarafis, Panagiotis et al. | 2016
- 446
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High-Performance Depletion-Mode Multiple-Strip ZnO-Based Fin Field-Effect TransistorsLee, Ching-Ting et al. | 2016
- 452
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Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive MaterialSun, Lei et al. | 2016
- 459
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A Current-Induced Channel Organic Thin-Film TransistorGangwar, A et al. | 2016
- 465
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Adhesion Limits and Design Criteria for NanorelaysLin, Kevin L et al. | 2016
- 471
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Properties of Hf-Doped Bi1.5Zn0.92Nb1.5O6.92 Ceramic VaricapsKhusayfan, Najla M et al. | 2016
- 476
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Carbon Nanotube Thin Films Functionalized via Loading of Au Nanoclusters for Flexible Gas Sensors DevicesLin, Zheng-Dong et al. | 2016
- 481
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Design and Development of a Novel, Compact, and Light-Weight Multistage Depressed Collector for Space TWTsLatha, A. Mercy et al. | 2016
- 486
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A TE13 Mode Converter for High-Order Mode Gyrotron-Traveling-Wave TubesLuo, Yong et al. | 2016
- 491
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A Wideband Electron-Optical System of a Subterahertz Large-Orbit GyrotronKalynov, Yuriy K et al. | 2016
- 497
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Design Study of a Fundamental Mode Input Coupler for a 372-GHz Gyro-TWA I: Rectangular-to-Circular Coupling MethodsGarner, Jason R et al. | 2016
- 504
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Ultrawideband Coalesced-Mode Operation for a Sheet-Beam Traveling-Wave TubeWang, Jianxun et al. | 2016
- 512
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Simulation and Experiments of a $W$ -Band Extended Interaction Oscillator Based on a Pseudospark-Sourced Electron BeamYin, Yong et al. | 2016
- 512
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Simulation and Experiments of a [Formula Omitted]-Band Extended Interaction Oscillator Based on a Pseudospark-Sourced Electron BeamYong Yin et al. | 2016
- 517
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Monte Carlo Investigation of High-Field Electron Transport Characteristics in ZnMgO/ZnO HeterostructuresWang, Ping et al. | 2016
- 524
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Toward Ultimate Scaling of MOSFETMuralidhar, Ramachandran et al. | 2016
- 527
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Errata to "Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors"Trevisoli, Renan et al. | 2016
- 528
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Introducing IEEE Collabratec| 2016
- 531
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Area-efficient and low-leakage diode string for on-chip ESD protectionChun-Yu Lin et al. | 2016
- 537
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Quantum transport analysis of conductance variability in graphene nanoribbons with edge defectsPoljak, M et al. | 2016
- 544
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First principles calculations of bonding and charges at the interface in a c-Si/Si structure applicable for the surface passivation of silicon-based solar cellsBansal, A et al. | 2016
- 551
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Channel Profile Design of textE DC MOSFET for High Intrinsic Gain and Low MismatchSengupta, S et al. | 2016
- 558
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Impact of postdeposition annealing ambient on the mobility of Ge nMOSFETs with 1-nm EOT /Ge gate-stacksRui Zhang et al. | 2016
- 565
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Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behaviorAamir Ahsan, S et al. | 2016
- 573
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Dual-gate Mo FET with a coplanar-gate engineeringJie Jiang et al. | 2016
- 584
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RF characterization of vertical wrap-gated InAs/high- K nanowire capacitorsJun Wu et al. | 2016
- 590
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Measurement of temperature in GaN HEMTs by gate end-to-end resistancePaine, B.M et al. | 2016
- 606
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The III-nitride double heterostructure revisited: benefits for threshold voltage engineering of MIS devicesHahn, H et al. | 2016
- 614
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Normally OFF GaN-on-Si MIS-HEMTs fabricated with LPCVD-SiNx passivation and high-temperature gate recessYijun Shi et al. | 2016
- 620
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Bonding pad over active structure for chip shrinkage of high-power AlGaN/GaN HFETsSeung Kyu Oh et al. | 2016
- 625
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Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applicationsChang-Hung Yu et al. | 2016
- 643
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A comprehensive benchmark and optimization of 5-nm lateral and vertical GAA 6T-SRAMsTrong Huynh-Bao et al. | 2016
- 652
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Compact modeling of magnetic tunneling junctionsRoy, A.S et al. | 2016
- 659
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Accurate lifetime estimation of sub-20-nm NAND flash memoryKyunghwan Lee et al. | 2016
- 668
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Improved short-channel characteristics with long data retention time in extreme short-channel flash memory devicesGupta, D et al. | 2016
- 675
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A compact model for single-poly multitime programmable memory cellsCong Li et al. | 2016
- 684
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Noise margin modeling for zero- load TFT circuits and yield estimationQinghang Zhao et al. | 2016
- 691
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Optical performance enhancement of quantum dot-based light-emitting diodes through an optimized remote structureXiang Lei et al. | 2016
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Characterization of Lag Signal in Amorphous Selenium DetectorsAbbaszadeh, S et al. | 2016
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Electron beam curing technology for very high-throughput manufacturing of flexible alternating current powder electroluminescent devicesSico, G et al. | 2016
- 717
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Simulation of Alumina Nanopores as High Spatial Resolution Electron MultipliersTaheri, A et al. | 2016
- 723
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Reliability of Au-Free AlGaN/GaN-on-silicon schottky barrier diodes under ON-state stressTallarico, A.N et al. | 2016
- 731
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Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD as gate dielectric and passivation layerZhili Zhang et al. | 2016
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Low-capacitance through-silicon-vias with combined air/Si linersCui Huang et al. | 2016
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Direct Al-imprinting method for increased effective electrode area in MIM capacitorsHourdakis, E et al. | 2016
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Thermal stability improvement induced by laser annealing for 50-A Ni film silicidationJian-Chi Zhang et al. | 2016
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A realistic method for time-dependent dielectric breakdown reliability analysis for advanced technology nodeKong Boon Yeap et al. | 2016
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Optical-phonon-limited high-field transport in layered materialsChandrasekar, H et al. | 2016
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Ultimate performance projection of ultrathin body transistor based on group IV, III-V, and 2-D-materialsKain Lu Low et al. | 2016
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Parasitic capacitance analytical model for sub-7-nm multigate devicesLacord, J et al. | 2016
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Organic single-crystal nanowire transistor fabricated by glass fiber mask methodLiangliang Deng et al. | 2016
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Fully additive low-cost printed electronics with very low process variationsJia Zhou et al. | 2016
- 809
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Lateral MEMS-type field emission electron sourceGrzebyk, T et al. | 2016
- 814
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Design and microwave measurement of a broadband compact power coupler for sheet beam traveling wave tubesJianxun Wang et al. | 2016
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A 3-D large-signal model of folded-waveguide TWTsWei-Zhong Yan et al. | 2016
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Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistorsTrevisoli, R et al. | 2016
- 864
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Performance improvement of Poly-Si tunnel FETs by trap density reductionMa, W.C.-Y et al. | 2016
- 869
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Examination of two-band E relations for band-to-band tunnelingTaur, Y et al. | 2016
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- 877
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- 881
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Determination of surface donor states properties and modeling of InAlN/AlN/GaN heterostructuresGoyal, N et al. | 2016
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Front cover| 2016
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IEEE Transactions on Electron Devices publication information| 2016
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IEEE Transactions on Electron Devices information for authors| 2016
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Blank page| 2016
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Spin-torque sensors for energy efficient high-speed long interconnectsAl Azim, Z et al. | 2016