Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode (Englisch)
- Neue Suche nach: Lin-Lin Wang
- Neue Suche nach: Lin-Lin Wang
- Neue Suche nach: Wu Peng
- Neue Suche nach: Yu-Long Jiang
- Neue Suche nach: Bing-Zong Li
In:
IEEE electron device letters
;
36
, 6
; 597-599
;
2015
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode
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Beteiligte:
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Erschienen in:IEEE electron device letters ; 36, 6 ; 597-599
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2015
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
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Datenquelle:
Inhaltsverzeichnis – Band 36, Ausgabe 6
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