3-D Stacked DRAM Refresh Management With Guaranteed Data Reliability (Englisch)
- Neue Suche nach: Lim, Jaeil
- Neue Suche nach: Lim, Jaeil
- Neue Suche nach: Lim, Hyunyul
- Neue Suche nach: Kang, Sungho
In:
IEEE transactions on computer-aided design of integrated circuits and systems
;
34
, 9
; 1455-1466
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:3-D Stacked DRAM Refresh Management With Guaranteed Data Reliability
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Beteiligte:
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Erschienen in:IEEE transactions on computer-aided design of integrated circuits and systems ; 34, 9 ; 1455-1466
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Verlag:
- Neue Suche nach: Institute of Electrical and Electronics Engineers
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2015
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/3155/5670
- Neue Suche nach: 53.52 / 33.72 / 33.61 / 53.51
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
Lokalklassifikation TIB: 770/3155/5670 BKL: 53.52 Elektronische Schaltungen / 33.72 Halbleiterphysik / 33.61 Festkörperphysik / 53.51 Bauelemente der Elektronik -
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