Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy (Englisch)
- Neue Suche nach: Zhang, Z
- Neue Suche nach: Zhang, Z
- Neue Suche nach: Farzana, E
- Neue Suche nach: Arehart, A. R
- Neue Suche nach: Ringel, S. A
In:
Applied physics letters
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108
, 5
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2016
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
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Beteiligte:
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Erschienen in:Applied physics letters ; 108, 5
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Verlag:
- Neue Suche nach: AIP
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Erscheinungsort:Melville, NY
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Erscheinungsdatum:2016
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/3400
- Neue Suche nach: 33.00
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Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopyZhang, Z. / Farzana, E. / Arehart, A. R. / Ringel, S. A. et al. | 2016