SiC power MOSFETs performance, robustness and technology maturity (Englisch)
- Neue Suche nach: Castellazzi, A
- Neue Suche nach: Castellazzi, A
- Neue Suche nach: Fayyaz, A
- Neue Suche nach: Romano, G
- Neue Suche nach: Yang, L
- Neue Suche nach: Riccio, M
- Neue Suche nach: Irace, A
In:
Microelectronics reliability
;
58
; 164-176
;
2016
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:SiC power MOSFETs performance, robustness and technology maturity
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Beteiligte:
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Erschienen in:Microelectronics reliability ; 58 ; 164-176
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2016
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 275/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 58
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- 12
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- 17
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- 17
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- 26
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- 26
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A methodology for projecting SiOEfthymiou, E et al. | 2016
- 33
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Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)Kusumoto, Osamu / Ohoka, Atsushi / Horikawa, Nobuyuki / Tanaka, Kohtaro / Niwayama, Masahiko / Uchida, Masao / Kanzawa, Yoshihiko / Sawada, Kazuyuki / Ueda, Tetsuzo et al. | 2015
- 164
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SiC power MOSFETs performance, robustness and technology maturityCastellazzi, A. / Fayyaz, A. / Romano, G. / Yang, L. / Riccio, M. / Irace, A. et al. | 2015
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- 197
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Lifetime tests of 600-V GaN-on-Si power switches and HEMTsSmith, K.V. / Haller, J. / Guerrero, J. / Smith, R.P. / Lal, R. / Wu, Y.-F. et al. | 2015
- 204
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Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditionsIbrahim, A. / Ousten, J.P. / Lallemand, R. / Khatir, Z. et al. | 2015
- IFC
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Editorial Board| 2016