Modeling the effects of Si-X (X = F, Cl) bonds on the chemical and electronic properties of Si-surface terminated porous 3C-SiC (Englisch)
- Neue Suche nach: Calvino, M
- Neue Suche nach: Calvino, M
- Neue Suche nach: Trejo, A
- Neue Suche nach: Crisóstomo, M C
- Neue Suche nach: Iturrios, M I
- Neue Suche nach: Carvajal, E
- Neue Suche nach: Cruz-Irisson, M
In:
Theoretical chemistry accounts
;
135
, 4
; 1-7
;
2016
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Modeling the effects of Si-X (X = F, Cl) bonds on the chemical and electronic properties of Si-surface terminated porous 3C-SiC
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Beteiligte:Calvino, M ( Autor:in ) / Trejo, A / Crisóstomo, M C / Iturrios, M I / Carvajal, E / Cruz-Irisson, M
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Erschienen in:Theoretical chemistry accounts ; 135, 4 ; 1-7
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Verlag:
- Neue Suche nach: Springer
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Erscheinungsort:Berlin
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Erscheinungsdatum:2016
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 135, Ausgabe 4
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Modeling the effects of Si-X (X = F, Cl) bonds on the chemical and electronic properties of Si-surface terminated porous 3C-SiCCalvino, M. / Trejo, A. / Crisóstomo, M. C. / Iturrios, M. I. / Carvajal, E. / Cruz-Irisson, M. et al. | 2016
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