Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS) (Englisch)
- Neue Suche nach: Lin, Jianqiang
- Neue Suche nach: Lin, Jianqiang
- Neue Suche nach: Czornomaz, Lukas
- Neue Suche nach: Daix, Nicolas
- Neue Suche nach: Antoniadis, Dimitri A
- Neue Suche nach: del Alamo, Jesus A
In:
IEEE transactions on electron devices
;
63
, 8
; 3088-3095
;
2016
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS)
-
Beteiligte:Lin, Jianqiang ( Autor:in ) / Czornomaz, Lukas / Daix, Nicolas / Antoniadis, Dimitri A / del Alamo, Jesus A
-
Erschienen in:IEEE transactions on electron devices ; 63, 8 ; 3088-3095
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:2016
-
ISSN:
-
ZDBID:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 63, Ausgabe 8
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2987
-
A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTsWier, Brian R. / Green, Keith / Kim, Jonggook / Zweidinger, David T. / Cressler, John D. et al. | 2016
- 2994
-
Analytic Estimation of Thermal Resistance in HBTsChakravorty, Anjan / D'Esposito, Rosario / Balanethiram, Suresh / Fregonese, Sebastien / Zimmer, Thomas et al. | 2016
- 2999
-
Effective Drive Current for Pass-Gate TransistorsZhang, Hao / Gupta, Mayank / Watt, Jeff / Wei, Lan et al. | 2016
- 3005
-
Electrical Breakdown in Thin Si Oxide Modeled by a Quantum Point Contact NetworkHolloway, Gregory W. / Ivanov, Oleg / Gavrilov, Roman / Bluschke, Armin G. / Hold, Betina K. / Baugh, Jonathan et al. | 2016
- 3011
-
A Novel Technique to Measure Interface Trap Density in an MIS Capacitor Using Time-Varying Magnetic FieldsRoy Choudhury, Aditya N. / Venkataraman, Venki et al. | 2016
- 3019
-
Physical Insights Into Electric Field Modulation in Dual- $k$ Spacer Asymmetric Underlap FinFETDutta, Arka / Koley, Kalyan / Saha, Samar K. / Sarkar, Chandan Kumar et al. | 2016
- 3028
-
Fully Depleted Ge CMOS Devices and Logic Circuits on SiWu, Heng / Ye, Peide D. et al. | 2016
- 3036
-
ESD and Latchup Optimization of an Embedded-Floating-pMOS SCR-Incorporated BJTHuang, Chih-Yao / Chiu, Fu-Chien / Ou, Chien-Min / Chen, Quo-Ker / Huang, Yi-Jou / Tseng, Jen-Chou et al. | 2016
- 3044
-
Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and EmitterVainshtein, Sergey N. / Duan, Guoyong / Filimonov, Alexey V. / Kostamovaara, Juha T. et al. | 2016
- 3049
-
Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate ScalingWu, Heng / Wu, Wangran / Si, Mengwei / Ye, Peide D. et al. | 2016
- 3058
-
Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET DevicesSu, Ping-Hsun / Li, Yiming et al. | 2016
- 3064
-
Ultralow Capacitance Transient Voltage Suppressor DesignLo, Kuo-Hsuan / Huang, Chien-Hao / Weng, Wu-Te / Huang, Tsung-Yi / Su, Hung-Der / Gong, Jeng / Huang, Chih-Fang et al. | 2016
- 3069
-
Electrical Effects of a Single Extended Defect in MOSFETsNi, Kai / Eneman, Geert / Simoen, Eddy / Mocuta, Anda / Collaert, Nadine / Thean, Aaron / Schrimpf, Ronald D. / Reed, Robert A. / Fleetwood, Dan et al. | 2016
- 3076
-
0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate RecessXu, Dong / Chu, Kanin / Diaz, Jose A. / Ashman, Michael D. / Komiak, J. J. / Mt. Pleasant, Louis M. / Vera, Alice / Seekell, Philip / Yang, Xiaoping / Creamer, Carlton et al. | 2016
- 3076
-
0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate RecessXu, Dong et al. | 2016
- 3084
-
The Comparison of Current Ratio $I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}}$ and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETsKong, Xiangting / Liang, Renrong / Zhou, Xuliang / Li, Shiyan / Wang, Mengqi / Liu, Honggang / Wang, Jing / Wang, Wei / Pan, Jiaoqing et al. | 2016
- 3088
-
Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS)Lin, Jianqiang / Czornomaz, Lukas / Daix, Nicolas / Antoniadis, Dimitri A. / del Alamo, Jesus A. et al. | 2016
- 3096
-
GaN High Electron Mobility Transistor Simulations With Full Wave and Hot Electron EffectsGrupen, Matt et al. | 2016
- 3103
-
Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change NanodevicesGokce, Aisha / Cinar, Ibrahim / Ozdemir, Servet C. / Cogulu, Egecan / Stipe, Barry / Katine, Jordan A. / Ozatay, Ozhan et al. | 2016
- 3109
-
Physical Unclonable Function Exploiting Sneak Paths in Resistive Cross-point ArrayGao, Ligang / Chen, Pai-Yu / Liu, Rui / Yu, Shimeng et al. | 2016
- 3116
-
Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAMGonzalez, Mireia Bargallo et al. | 2016
- 3123
-
Self-Aligned Coplanar Top Gate In-G-ZnO Thin-Film Transistors Exposed to Various DUV Irradiation EnergiesSeung-Man Ryu et al. | 2016
- 3123
-
Self-Aligned Coplanar Top Gate In–Ga–ZnO Thin-Film Transistors Exposed to Various DUV Irradiation EnergiesRyu, Seung-Man / Kim, Myoeng-Ho / Jeon, Sung-Ho / Lim, Jun-Hyung / Choi, Duck-Kyun et al. | 2016
- 3128
-
Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In–Ga–ZnO Thin Films as Both Charge Trap and Active Channel LayersYun, Da-Jeong / Kang, Han-Byeol / Yoon, Sung-Min et al. | 2016
- 3135
-
InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs SubstratesPusino, Vincenzo / Xie, Chengzhi / Khalid, Ata / Steer, Matthew J. / Sorel, Marc / Thayne, Iain G. / Cumming, David R. S. et al. | 2016
- 3143
-
The Efficiency and Reliability Improvement by Utilizing Quartz Airtight Packaging of UVC LEDsLu, Chien-Chun / Wang, Chien-Ping / Liu, Cheng-Yi / Hsu, Chen-Peng et al. | 2016
- 3147
-
Electrically Controlled Photocatalytic Reduction of Graphene Oxide Sheets by ZnO Nanostructures, Suitable for Tunable Optoelectronic ApplicationsFeda, Mohammad Hosein / Khosravi, Yousef / Darbari, Sara / Abdollahi Nejand, Bahram et al. | 2016
- 3154
-
Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-ThyristorsSlipchenko, Sergey O. / Podoskin, Alexandr A. / Soboleva, Olga S. / Veselov, Dmitrii A. / Zolotarev, Vasilii V. / Pikhtin, Nikita A. / Bagaev, Timur A. / Ladugin, Maxim A. / Marmalyuk, Aleksandr A. / Simakov, Vladimir A. et al. | 2016
- 3160
-
Ultraviolet Photodetectors With 2-D Indium-Doped ZnO NanostructuresYoung, Sheng-Joue / Liu, Yi-Hsing et al. | 2016
- 3165
-
Visualization of Gate-Bias-Induced Carrier Redistribution in SiC Power DIMOSFET Using Scanning Nonlinear Dielectric MicroscopyChinone, Norimichi / Cho, Yasuo et al. | 2016
- 3171
-
Contact Extensions Over a High- $k$ Dielectric Layer for Surface Field Mitigation in High Power 4H–SiC Photoconductive SwitchesChowdhury, Animesh Roy / Mauch, Daniel / Joshi, Ravi P. / Neuber, Andreas A. / Dickens, James et al. | 2016
- 3177
-
Quad-SCR Device for Cross-Domain ESD ProtectionAltolaguirre, Federico A. / Ker, Ming-Dou et al. | 2016
- 3185
-
Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche ConditionsSinha, Dheeraj Kumar / Chatterjee, Amitabh / Schrimpf, Ronald D. et al. | 2016
- 3193
-
Investigation of Human-Body-Model and Machine-Model ESD Robustness on Stacked Low-Voltage Field-Oxide Devices for High-Voltage ApplicationsHuang, Yi-Jie / Ker, Ming-Dou et al. | 2016
- 3199
-
Investigation of All Wet Chemical Process for the Barrier Formation in High Aspect Ratio Silicon ViasSandjaja, Marco / Stolle, Thomas / Bund, Andreas / Lang, Klaus-Dieter et al. | 2016
- 3205
-
Systematic Characterization of Graphene ESD Interconnects for On-Chip ESD ProtectionChen, Qi / Ma, Rui / Zhang, Wei / Lu, Fei / Wang, Chenkun / Liang, Owen / Zhang, Feilong / Li, Cheng / Tang, He / Xie, Ya-Hong et al. | 2016
- 3213
-
Analytical Drain Current Modeling of Double-Gate Tunnel Field-Effect TransistorsPal, Arnab / Dutta, Aloke K. et al. | 2016
- 3222
-
Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise MeasurementsKaratsori, Theano A. / Theodorou, Christoforos G. / Mescot, Xavier / Haendler, Sebastien / Planes, Nicolas / Ghibaudo, Gerard / Dimitriadis, Charalabos A. et al. | 2016
- 3229
-
Field Sensors and Tunable Devices Using Magnetoelectric Hexaferrite on Silicon SubstratesZare, Saba / Somu, Sivasubramanian / Lombardi, Fabrizio / Vittoria, Carmine et al. | 2016
- 3236
-
Silicon-on-Insulator Photoimpedance Sensor Using Capacitance DispersionSaxena, Tanuj / Shur, Michael et al. | 2016
- 3241
-
Design Issues for Performance Enhancement in Nanostructured Silicon Oxide Biosensors: Modeling the Frequency ResponseGhosh, Hrilina / Kundu, Debarshi / RoyChaudhuri, Chirasree et al. | 2016
- 3249
-
Optimization of CMOS-ISFET-Based Biomolecular Sensing: Analysis and Demonstration in DNA DetectionXu, Guangyu / Abbott, Jeffrey / Ham, Donhee et al. | 2016
- 3257
-
Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF BeamKesari, Vishal / Singh, Arun Kumar / Seshadri, Ramaswamy / Kamath, Sudhir et al. | 2016
- 3262
-
A High-Power Single Rectangular Grating Sheet Electron Beam Traveling-Wave TubeZhang, Yabin / Wang, Zhanliang / Zhou, Qing / Liu, Shuaihong / Bo, Wenfei / Li, Xinyi / Wang, Yanshuai / Tang, Xianfeng / Gong, Huarong / Duan, Zhaoyun et al. | 2016
- 3270
-
Secondary Electron Emission of Pt: Experimental Study and Comparison With Models in the Multipactor Energy RangeBronchalo, Enrique / Coves, Angela / Mata, Rafael / Gimeno, Benito / Montero, Isabel / Galan, Luis / Boria, Vicente E. / Mercade, Laura / Sanchis-Kilders, Esteban et al. | 2016
- 3278
-
Deeper Insights of the Conduction Mechanisms in a Vacuum SOI NanotransistorRavariu, Cristian et al. | 2016
- 3284
-
Design Study of a 372-GHz Higher Order Mode Input CouplerGarner, Jason R. / Zhang, Liang / Donaldson, Craig R. / Cross, Adrian W. / He, Wenlong et al. | 2016
- 3291
-
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide StructureKumar, Sanjay / Goel, Ekta / Singh, Kunal / Singh, Balraj / Kumar, Mirgender / Jit, Satyabrata et al. | 2016
- 3300
-
A Fitting Model for Asymmetric $I$ – $V$ Characteristics of Graphene FETs for Extraction of Intrinsic MobilitiesSatou, Akira / Tamamushi, Gen / Sugawara, Kenta / Mitsushio, Junki / Ryzhii, Victor / Otsuji, Taiichi et al. | 2016
- 3300
-
A Fitting Model for Asymmetric [Formula Omitted]-[Formula Omitted] Characteristics of Graphene FETs for Extraction of Intrinsic MobilitiesAkira Satou et al. | 2016
- 3307
-
Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent StudyAl-Rashid, Md Mamun / Bandyopadhyay, Supriyo / Atulasimha, Jayasimha et al. | 2016
- 3314
-
Analytical Modeling of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances and Density of StatesDokania, Vishesh / Islam, Aminul / Dixit, Vivek / Tiwari, Shree Prakash et al. | 2016
- 3320
-
Quantum Mechanical Confinement in the Fin Electron–Hole Bilayer Tunnel Field-Effect TransistorPadilla, Jose L. / Alper, Cem / Gamiz, Francisco / Ionescu, Adrian Mihai et al. | 2016
- 3327
-
Vertical Slit FET at 7-nm Node and BeyondYang, Ping-Lin / Hook, Terence B. / Oldiges, Philip J. / Doris, Bruce B. et al. | 2016
- 3335
-
Hall Effect in Thin-Film TransistorKimura, Mutsumi / Matsumoto, Takaaki / Yoshikawa, Akito / Matsuda, Tokiyoshi / Ozawa, Tokuro / Aoki, Koji / Kuo, Chih-Che et al. | 2016
- 3338
-
Study of Work-Function Variation in High- $\kappa $ /Metal-Gate Gate-All-Around Nanowire MOSFETNam, Hyohyun / Lee, Youngtaek / Park, Jung-Dong / Shin, Changhwan et al. | 2016
- 3338
-
Study of Work-Function Variation in High-[Formula Omitted]/Metal-Gate Gate-All-Around Nanowire MOSFETHyohyun Nam et al. | 2016
- 3342
-
Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped DrainWu, Jianzhi / Taur, Yuan et al. | 2016
- 3346
-
Electrical Coupling of Monolithic 3-D InvertersYu, Yun Seop / Panth, Shreepad / Lim, Sung Kyu et al. | 2016
- 3350
-
Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid ChannelKumar, Mamidala Jagadesh / Sahay, Shubham et al. | 2016
- 3354
-
A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Double-Gate MOSFET Working on Subthreshold CMOS Logic GatesChiang, Te-Kuang et al. | 2016
- 3360
-
High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic SubstratesHan, Dedong / Chen, Zhuofa / Cong, Yingying / Yu, Wen / Zhang, Xing / Wang, Yi et al. | 2016
- 3364
-
Transactions on Electron Devices Special Issue on Flexible Electronics CFP| 2016
- 3365
-
Power Semiconductor Devices and Smart Power IC Technologies CFP| 2016
- 3366
-
2017 IEEE International Reliability Physics Symposium| 2016
- 3367
-
2016 IEEE International Electron Devices Meeting| 2016
- 3368
-
IEDM Exhibits Program| 2016
- C1
-
Table of contents| 2016
- C2
-
IEEE Transactions on Electron Devices publication information| 2016
- C3
-
IEEE Transactions on Electron Devices information for authors| 2016
- C4
-
Blank page| 2016
-
0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate RecessDong Xu et al. | 2016