Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers (Englisch)
- Neue Suche nach: Sun, Z. Y
- Neue Suche nach: Sun, Z. Y
- Neue Suche nach: Li, J
- Neue Suche nach: Zhao, W. P
- Neue Suche nach: Lin, J. Y
- Neue Suche nach: Jiang, H. X
In:
Applied physics letters
;
109
, 5
; 52101
;
2016
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers
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Beteiligte:
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Erschienen in:Applied physics letters ; 109, 5 ; 52101
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Verlag:
- Neue Suche nach: AIP
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Erscheinungsort:Melville, NY
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Erscheinungsdatum:2016
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/3400
- Neue Suche nach: 33.00
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