Optimization of Ni(Pt)/Si-cap/SiGe Silicidation for pMOS Source/Drain Contact (Englisch)
- Neue Suche nach: Wang, Lin-Lin
- Neue Suche nach: Wang, Lin-Lin
- Neue Suche nach: Zhang, Jian-Chi
- Neue Suche nach: Jiang, Yu-Long
In:
IEEE transactions on electron devices
;
64
, 5
; 2067-2071
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Optimization of Ni(Pt)/Si-cap/SiGe Silicidation for pMOS Source/Drain Contact
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 64, 5 ; 2067-2071
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2017
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
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Datenquelle:
Inhaltsverzeichnis – Band 64, Ausgabe 5
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