Mechanism and origin of hysteresis in oxide thin-film transistor and its application on 3-D nonvolatile memory (Englisch)
- Neue Suche nach: Zhi Ye
- Neue Suche nach: Zhi Ye
- Neue Suche nach: Yonggang Yuan
- Neue Suche nach: Hua Xu
- Neue Suche nach: Yang Liu
- Neue Suche nach: Jikui Luo
- Neue Suche nach: Man Wong
In:
IEEE transactions on electron devices
;
64
, 1
; 438
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Mechanism and origin of hysteresis in oxide thin-film transistor and its application on 3-D nonvolatile memory
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 64, 1 ; 438
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2017
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
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Datenquelle:
Inhaltsverzeichnis – Band 64, Ausgabe 1
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