GaN-on-Si Power Technology: Devices and Applications (Englisch)
- Neue Suche nach: Chen, Kevin J
- Neue Suche nach: Chen, Kevin J
- Neue Suche nach: Haberlen, Oliver
- Neue Suche nach: Lidow, Alex
- Neue Suche nach: Tsai, Chun lin
- Neue Suche nach: Ueda, Tetsuzo
- Neue Suche nach: Uemoto, Yasuhiro
- Neue Suche nach: Wu, Yifeng
In:
IEEE transactions on electron devices
;
64
, 3
; 779-795
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:GaN-on-Si Power Technology: Devices and Applications
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Beteiligte:Chen, Kevin J ( Autor:in ) / Haberlen, Oliver / Lidow, Alex / Tsai, Chun lin / Ueda, Tetsuzo / Uemoto, Yasuhiro / Wu, Yifeng
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Erschienen in:IEEE transactions on electron devices ; 64, 3 ; 779-795
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2017
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 64, Ausgabe 3
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Table of contents| 2017
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Guest Editorial Special Issue on Power Semiconductor Devices and Smart Power IC TechnologiesNg, Wai Tung / Udrea, Florin / Omura, Ichiro / Vobecky, Jan / Disney, Don et al. | 2017
- 659
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High-Voltage Integrated Circuits: History, State of the Art, and Future ProspectsDisney, Don / Letavic, Ted / Trajkovic, Tanya / Terashima, Tomohide / Nakagawa, Akio et al. | 2017
- 674
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The Trench Power MOSFET: Part I—History, Technology, and ProspectsWilliams, Richard K. / Darwish, Mohamed N. / Blanchard, Richard A. / Siemieniec, Ralf / Rutter, Phil / Kawaguchi, Yusuke et al. | 2017
- 692
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The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and ReliabilityWilliams, Richard K. / Darwish, Mohamed N. / Blanchard, Richard A. / Siemieniec, Ralf / Rutter, Phil / Kawaguchi, Yusuke et al. | 2017
- 713
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Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge TerminationYang, Wentao / Feng, Hao / Fang, Xiangming / Liu, Yong / Onozawa, Yuichi / Tanaka, Hiroyuki / Sin, Johnny K. O. et al. | 2017
- 720
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Superjunction Power Devices, History, Development, and Future ProspectsUdrea, Florin / Deboy, Gerald / Fujihira, Tatsuhiko et al. | 2017
- 735
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Detailed Study on Dynamic Characteristics of a High-Performance SGT-MOSFET With Under-the-Trench Floating P-PillarDeng, Shengling / Hossain, Zia / Taniguchi, Toshimitsu et al. | 2017
- 741
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IGBT History, State-of-the-Art, and Future ProspectsIwamuro, Noriyuki / Laska, Thomas et al. | 2017
- 753
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Next Generation IGBT and Package Technologies for High Voltage ApplicationsKopta, Arnost / Rahimo, Munaf / Corvasce, Chiara / Andenna, Maxi / Dugal, Franc / Fischer, Fabian / Hartmann, Samuel / Baschnagel, Andreas et al. | 2017
- 760
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Silicon Thyristors for Ultrahigh Power (GW) ApplicationsVobecky, Jan / Schulze, Hans-Joachim / Streit, Peter / Niedernostheide, Franz-Josef / Botan, Virgiliu / Przybilla, Jens / Kellner-Werdehausen, Uwe / Bellini, M. et al. | 2017
- 769
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Design and Characterization of High-Current Optical Darlington Transistor for Pulsed-Power ApplicationsMojab, Alireza / Mazumder, Sudip K. et al. | 2017
- 779
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GaN-on-Si Power Technology: Devices and ApplicationsChen, Kevin J. / Haberlen, Oliver / Lidow, Alex / Tsai, Chun lin / Ueda, Tetsuzo / Uemoto, Yasuhiro / Wu, Yifeng et al. | 2017
- 796
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Introducing Optical Cascode GaN HEMTMojab, Alireza / Hemmat, Zahra / Riazmontazer, Hossein / Rahnamaee, Arash et al. | 2017
- 805
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Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking LayerJi, Dong / Laurent, Matthew A. / Agarwal, Anchal / Li, Wenwen / Mandal, Saptarshi / Keller, Stacia / Chowdhury, Srabanti et al. | 2017
- 809
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Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive ComparisonZhang, Xu / Zou, Xinbo / Lu, Xing / Tang, Chak Wah / Lau, Kei May et al. | 2017
- 816
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Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic ApplicationsAamir Ahsan, Sheikh / Ghosh, Sudip / Khandelwal, Sourabh / Chauhan, Yogesh Singh et al. | 2017
- 824
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Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate DielectricLu, Xing / Yu, Kun / Jiang, Huaxing / Zhang, Anping / Lau, Kei May et al. | 2017
- 832
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Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTsJiang, Huaxing / Liu, Chao / Chen, Yuying / Lu, Xing / Tang, Chak Wah / Lau, Kei May et al. | 2017
- 840
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Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-StackZhu, Jiejie / Zhu, Qing / Chen, Lixiang / Hou, Bin / Yang, Ling / Zhou, Xiaowei / Ma, Xiaohua / Hao, Yue et al. | 2017
- 848
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Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTsMocanu, Manuela / Unger, Christian / Pfost, Martin / Waltereit, Patrick / Reiner, Richard et al. | 2017
- 856
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Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap SemiconductorsChow, T. Paul / Omura, Ichiro / Higashiwaki, Masataka / Kawarada, Hiroshi / Pala, Vipindas et al. | 2017
- 874
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Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar OperationNiwa, Hiroki / Suda, Jun / Kimoto, Tsunenobu et al. | 2017
- 882
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A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTsSalemi, Arash / Elahipanah, Hossein / Zetterling, Carl-Mikael / Ostling, Mikael et al. | 2017
- 888
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Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTsChowdhury, Sauvik / Hitchcock, Collin W. / Stum, Zachary / Dahal, Rajendra P. / Bhat, Ishwara B. / Chow, T. Paul et al. | 2017
- 897
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Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n RectifiersChowdhury, Sauvik / Hitchcock, Collin W. / Dahal, Rajendra P. / Bhat, Ishwara B. / Chow, T. Paul et al. | 2017
- 901
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2-D Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion EffectSingh, Balraj / Gola, Deepti / Singh, Kunal / Goel, Ekta / Kumar, Sanjay / Jit, Satyabrata et al. | 2017
- 909
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Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV TechniqueCheng, Ran / Yu, Xiao / Chen, Bing / Li, Junfeng / Qu, Yiming / Han, Jinghui / Zhang, Rui / Zhao, Yi et al. | 2017
- 916
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Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable OperationAthanasiou, Sotirios / Legrand, Charles-Alexandre / Cristoloveanu, Sorin / Galy, Philippe et al. | 2017
- 923
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Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA LimitKamrani, Hamed / Jabs, Dominic / d'Alessandro, Vincenzo / Rinaldi, Niccolo / Jacquet, Thomas / Maneux, Cristell / Zimmer, Thomas / Aufinger, Klaus / Jungemann, Christoph et al. | 2017
- 930
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ACO-Based Thermal-Aware Thread-to-Core Mapping for Dark-Silicon-Constrained CMPsWang, Jian / Chen, Zhe / Guo, Jinhong / Li, Yubai / Lu, Zhonghai et al. | 2017
- 938
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An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FETGuan, Yunhe / Li, Zunchao / Zhang, Wenhao / Zhang, Yefei et al. | 2017
- 945
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Comprehensive Simulation Study of Direct Source-to-Drain Tunneling in Ultra-Scaled Si, Ge, and III-V DG-FETsJiang, Zhengping / Wang, Jing / Park, Hong-Hyun / Pham, Anh-Tuan / Xu, Nuo / Lu, Yang / Jin, Seonghoon / Choi, Woosung / Pourghaderi, Mohammad Ali / Kim, Jongchol et al. | 2017
- 953
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Comparison of Logic Performance of CMOS Circuits Implemented With Junctionless and Inversion-Mode FinFETsGuin, Shilpi / Sil, Monali / Mallik, Abhijit et al. | 2017
- 960
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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide StructureKumar, Sanjay / Goel, Ekta / Singh, Kunal / Singh, Balraj / Singh, Prince Kumar / Baral, Kamalaksha / Jit, Satyabrata et al. | 2017
- 969
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Statistical Dependence of Gate Metal Work Function on Various Electrical Parameters for an n-Channel Si Step-FinFETSaha, Rajesh / Bhowmick, Brinda / Baishya, Srimanta et al. | 2017
- 977
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Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTsChatterjee, Indranil / Uren, Michael J. / Karboyan, Serge / Pooth, Alexander / Moens, Peter / Banerjee, Abhishek / Kuball, Martin et al. | 2017
- 984
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Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky DiodesTan, Serhat Orkun / Tecimer, Huseyin / Cicek, Osman et al. | 2017
- 991
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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si BuffersYacoub, H. / Mauder, C. / Leone, S. / Eickelkamp, M. / Fahle, D. / Heuken, M. / Kalisch, H. / Vescan, A. et al. | 2017
- 998
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Circuit Model for Double-Energy-Level Trap Centers in GaN HEMTsAlbahrani, Sayed Ali / Parker, Anthony / Heimlich, Michael et al. | 2017
- 1007
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Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETsEttisserry, Devanarayanan P. / Goldsman, Neil / Lelis, Aivars J. et al. | 2017
- 1015
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Buffer Layer Engineering for High ( $\geq 10^{\mathrm {13}}$ cm $^{\mathrm {-2}}$ ) 2-DEG Density in ZnO-Based HeterostructuresKhan, Md Arif / Singh, Rohit / Mukherjee, Shaibal / Kranti, Abhinav et al. | 2017
- 1015
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Buffer Layer Engineering for High ( \geq 10^} cm ^} ) 2-DEG Density in ZnO-Based HeterostructuresKhan, Md Arif et al. | 2017
- 1020
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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate DielectricWen, Ming / Xu, Jingping / Liu, Lu / Lai, Pui-To / Tang, Wing-Man et al. | 2017
- 1020
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Improved electrical performance of multilayer MoS.sub.2 transistor with NH.sub.3-annealed ALD HfTiO gate dielectricMing Wen et al. | 2017
- 1026
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Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection TransistorsOkita, Hideyuki / Hikita, Masahiro / Nishio, Akihiko / Sato, Takahiro / Matsunaga, Keiichi / Matsuo, Hisayoshi / Tsuda, Michinobu / Mannoh, Masaya / Kaneko, Saichiro / Kuroda, Masayuki et al. | 2017
- 1032
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Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical OriginMeneghini, Matteo / Barbato, Alessandro / Rossetto, Isabella / Favaron, Andrea / Silvestri, Marco / Lavanga, Simone / Sun, Haifeng / Brech, Helmut / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2017
- 1038
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Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETsCui, Peng / Liu, Huan / Lin, Wei / Lin, Zhaojun / Cheng, Aijie / Yang, Ming / Liu, Yan / Fu, Chen / Lv, Yuanjie / Luan, Chongbiao et al. | 2017
- 1045
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Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsStradiotto, Roberta / Pobegen, Gregor / Ostermaier, Clemens / Waltl, Michael / Grill, Alexander / Grasser, Tibor et al. | 2017
- 1053
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Evaluation of Ballistic Transport in III–V-Based p-Channel MOSFETsChang, Pengying / Liu, Xiaoyan / Di, Shaoyan / Du, Gang et al. | 2017
- 1060
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Compact Modeling and Evaluation of Magnetic Skyrmion-Based Racetrack MemoryKang, Wang / Zheng, Chentian / Huang, Yangqi / Zhang, Xichao / Lv, Weifeng / Zhou, Yan / Zhao, Weisheng et al. | 2017
- 1069
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Downscaling Metal—Oxide Thin-Film Transistors to Sub-50 nm in an Exquisite Film-Profile Engineering ApproachLyu, Rong-Jhe / Shie, Bo-Shiuan / Lin, Horng-Chih / Li, Pei-Wen / Huang, Tiao-Yuan et al. | 2017
- 1076
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Unified Physical DC Model of Staggered Amorphous InGaZnO TransistorsGhittorelli, Matteo / Torricelli, Fabrizio / Garripoli, Carmine / van der Steen, Jan-Laurens / Gelinck, Gerwin H. / Cantatore, Eugenio / Colalongo, Luigi / Kovacs-Vajna, Zsolt Miklos et al. | 2017
- 1083
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Fast Switching and Low Operating Vertical Alignment Liquid Crystal Display With 3-D Polymer Network for Flexible DisplayLim, Young Jin / Kim, Hyo Joong / Chae, Young Cheol / Murali, G. / Lee, Joong Hee / Mun, Byung-June / Gwon, Dae Young / Lee, Gi-Dong / Lee, Seung Hee et al. | 2017
- 1088
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The Modeling of Two Phosphors in Conversion White-Light LEDYing, Shang-Ping / Fu, Han-Kuei / Hsieh, Hsin-Hsin / Kuo, Hsuan-Wei et al. | 2017
- 1094
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Comparison of Photoresponse of Si-Based BIB THz DetectorsZhu, He / Weng, Zeping / Zhu, Jiaqi / Wu, Huizhen / Li, Ning / Dai, Ning et al. | 2017
- 1100
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Biased Photoresponse Analysis of Al–ZnO Heterojunctions with n- and p-Type SiliconGao, Zhen / Jahed, Navid M. S. / Sivoththaman, Siva et al. | 2017
- 1108
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A Comparative Study of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Ultrasonic Spray Pyrolysis Deposited Anatase and Rutile TiO2Liu, Han-Yin / Liu, Guan-Jyun et al. | 2017
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Luminous Properties and Thermal Reliability of Screen-Printed Phosphor-in-Glass-Based White Light-Emitting DiodesPeng, Yang / Li, Ruixin / Wang, Simin / Chen, Zhen / Nie, Lei / Chen, Mingxiang et al. | 2017
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Calibration of SiC Detectors for Nitrogen and Neon Plasma Emission Using Gas-Puff Target SourcesTorrisi, Alfio / Wachulak, Przemyslaw W. / Bartnik, Andrzej / Fok, Tomasz / Wegrzynski, Lukasz / Fiedorowicz, Henryk / Mazzillo, Massimo / Sciuto, Antonella / Torrisi, Lorenzo et al. | 2017
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Plasmon-Sensitized Optoelectronic Properties of Au Nanoparticle-Assisted Vertically Aligned TiO2 Nanowires by GLAD TechniqueShougaijam, Biraj / Ngangbam, Chitralekha / Lenka, Trupti Ranjan et al. | 2017
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Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection DepositionHsu, Chi-Hsiang / Chan, Yi-Chun / Chen, Wei-Cheng / Chang, Ching-Hong / Liou, Jian-Kai / Cheng, Shiou-Ying / Guo, Der-Feng / Liu, Wen-Chau et al. | 2017
- 1134
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Study of GaN-Based LEDs with hybrid SiO.sub.2 microsphere/nanosphere antireflection coating as a passivation layer by a rapid convection depositionChi-Hsiang Hsu et al. | 2017
- 1140
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A Linear Equivalent Circuit Model for Depletion-Type Silicon Microring ModulatorsShin, Myungjin / Ban, Yoojin / Yu, Byung-Min / Kim, Min-Hyeong / Rhim, Jinsoo / Zimmermann, Lars / Choi, Woo-Young et al. | 2017
- 1146
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Performance of Graded Bandgap HgCdTe Avalanche PhotodiodeSingh, Anand / Shukla, A. K. / Pal, Ravinder et al. | 2017
- 1153
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Integration of Prism Sheet on Quantum Dot Film With Bridge Patterns to Enhance Luminance of LED Backlight UnitKim, Se-Eun / Lee, Jae-Yong / Shin, Min-Ho / Kim, Hyo-Jun / Kim, Young-Joo et al. | 2017
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Dark Current Blooming in Pinned Photodiode CMOS Image SensorsBelloir, Jean-Marc / Lincelles, Jean-Baptiste / Pelamatti, Alice / Durnez, Clementine / Goiffon, Vincent / Virmontois, Cedric / Paillet, Philippe / Magnan, Pierre / Gilardx, Olivier et al. | 2017
- 1167
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A 32-Stage 15-b Digital Time-Delay Integration Linear CMOS Image Sensor With Data Prediction Switching TechniqueYin, Chin / Liao, Ting / Liu, Kuan-Lin / Kao, Chen-Che / Chiu, Chin-Fong / Hsieh, Chih-Cheng et al. | 2017
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Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding VoidageLiang, Renli / Zhang, Jun / Wang, Shuai / Chen, Qian / Xu, Linlin / Dai, Jiangnan / Chen, Changqing et al. | 2017
- 1180
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Modeling Spectra of Low-Power SMD LEDs as a Function of Ambient TemperatureRaypah, Muna E. / Devarajan, Mutharasu / Sulaiman, Fauziah et al. | 2017
- 1187
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Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded DiodesZhang, Long / Zhu, Jing / Sun, Weifeng / Chen, Meng / Zhao, Minna / Huang, Xuequan / Chen, Jiajun / Qian, Yuxiang / Shi, Longxing et al. | 2017
- 1193
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Step JTE, an Edge Termination for UHV SiC Power Devices With Increased Tolerances to JTE Dose and Surface ChargesZhou, Cai-Neng / Wang, Yan / Yue, Rui-Feng / Dai, Gang / Li, Jun-Tao et al. | 2017
- 1197
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Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field PlatesWaller, William M. / Gajda, Mark / Pandey, Saurabh / Donkers, Johan J. T. M. / Calton, David / Croon, Jeroen / Karboyan, Serge / Sonsky, Jan / Uren, Michael J. / Kuball, Martin et al. | 2017
- 1203
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Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors OperationHasegawa, Junichi / Pace, Loris / Phung, Luong Viet / Hatano, Mutsuko / Planson, Dominique et al. | 2017
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Role of the Insulating Fillers in the Encapsulation Material on the Lateral Charge Spreading in HV-ICsImperiale, Ilaria / Reggiani, Susanna / Pavarese, Giuseppe / Gnani, Elena / Gnudi, Antonio / Baccarani, Giorgio / Ahn, Woojin / Alam, Muhammad A. / Varghese, Dhanoop / Hernandez-Luna, Alejandro et al. | 2017
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Combination of E-Jet and Inkjet Printing for Additive Fabrication of Multilayer High-Density RDL of Silicon InterposerLaurila, Mika-Matti / Khorramdel, Behnam / Mantysalo, Matti et al. | 2017
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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer DepositionJin, Jidong / Wrench, Jacqueline S. / Gibbon, James T. / Hesp, David / Shaw, Andrew / Mitrovic, Ivona Z. / Sedghi, Naser / Phillips, Laurie J. / Zou, Jianli / Dhanak, Vinod R. et al. | 2017
- 1231
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Impact of Short-Wavelength and Long-Wavelength Line-Edge Roughness on the Variability of Ultrascaled FinFETsWong, Michael / Holland, Kyle D. / Anderson, Sam / Rizwan, Shahriar / Yuan, Zhi Cheng Jason / Hook, Terence B. / Kienle, Diego / Gudem, Prasad S. / Vaidyanathan, Mani et al. | 2017
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Oxidation Resistive, CMOS Compatible Copper-Based Alloy Ultrathin Films as a Superior Passivation Mechanism for Achieving 150 °C Cu–Cu Wafer on Wafer Thermocompression BondingPanigrahi, Asisa Kumar / Ghosh, Tamal / Vanjari, Siva Rama Krishna / Singh, Shiv Govind et al. | 2017
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Modeling Interconnect Variability at Advanced Technology Nodes and Potential SolutionsPrasad, Divya / Pan, Chenyun / Naeemi, Azad et al. | 2017
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Self-Powered Timekeeping and Synchronization Using Fowler–Nordheim Tunneling-Based Floating-Gate IntegratorsZhou, Liang / Chakrabartty, Shantanu et al. | 2017
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Compact Modeling of Transition Metal Dichalcogenide based Thin body Transistors and Circuit ValidationYadav, Chandan / Agarwal, Amit / Chauhan, Yogesh Singh et al. | 2017
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Concurrent Efficient Evaluation of Small-Change Parameters and Green’s Functions for TCAD Device Noise and Variability AnalysisDonati Guerrieri, Simona / Pirola, Marco / Bonani, Fabrizio et al. | 2017
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An Analytical Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions and the Channel Mobile Charge CarriersMohammadi, Saeed / Khaveh, Hamid Reza Tajik et al. | 2017
- 1285
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A Physics-Based (Verilog-A) Compact Model for DC, Quasi-Static Transient, Small-Signal, and Noise Analysis of MOSFET-Based pH SensorsDak, Piyush / Seo, Weeseong / Jung, Byunghoo / Alam, Muhammad A. et al. | 2017
- 1294
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IGZO-TFT Biosensors for Epstein–Barr Virus Protein DetectionYang, Tsung-Han / Chen, Ting-Yang / Wu, Nian-Ting / Chen, Yung-Tsan / Huang, Jian-Jang et al. | 2017
- 1300
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Performance Analysis of Nanoscale Single Layer Graphene Pressure SensorsSanaeepour, Majid / Abedi, Abolfazl / Sharifi, Mohammad Javad et al. | 2017
- 1305
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Cascade of Two $W$ -Band Helical-Waveguide Gyro-TWTs With High Gain and Output Power: Concept and ModelingSamsonov, Sergey V. / Bogdashov, Alexander A. / Denisov, Gregory G. / Gachev, Igor G. / Mishakin, Sergey V. et al. | 2017
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Automatic Hot Test of Gyrotron-Traveling Wave Tubes by Adaptive PID Feedback ControlLiu, Guo / Wang, Zhaodong / Zhao, Guohui / Yan, Ran / Xu, Yong / Wang, Jianxun / Pu, Youlei / Jiang, Wei et al. | 2017
- 1315
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Evaluation and Influence of Gyrotron Cathode Emission InhomogeneityZhang, Jianghua / Illy, Stefan / Pagonakis, Ioannis Gr. / Rzesnicki, Tomasz / Avramidis, Konstantinos A. / Malygin, Anton / Ruess, Sebastian / Samartsev, Andrey / Dammertz, Gunter / Piosczyk, Bernhard et al. | 2017
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Sub-100 mV Computing With Electro-Mechanical RelaysQian, Chuang / Peschot, Alexis / Osoba, Benjamin / Ye, Zhixin Alice / Liu, Tsu-Jae King et al. | 2017
- 1330
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Diameter Dependence of Leakage Current in Nanowire Junctionless Field Effect TransistorsSahay, Shubham / Kumar, Mamidala Jagadesh et al. | 2017
- 1336
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A Novel SuperSteep Subthreshold Slope Dual-Channel FET Utilizing a Gate-Controlled Thyristor Mode-Induced Positive Feedback CurrentChen, Wei-Chen / Lue, Hang-Ting / Hsiao, Yi-Hsuan / Lu, Chih-Yuan et al. | 2017
- 1343
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Symmetric U-Shaped Gate Tunnel Field-Effect TransistorChen, Shupeng / Wang, Shulong / Liu, Hongxia / Li, Wei / Wang, Qianqiong / Wang, Xing et al. | 2017
- 1350
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Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective–Part IAziz, Ahmedullah / Shukla, Nikhil / Datta, Suman / Gupta, Sumeet Kumar et al. | 2017
- 1358
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Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective—Part IIAziz, Ahmedullah / Shukla, Nikhil / Datta, Suman / Gupta, Sumeet Kumar et al. | 2017
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Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS StructurePahwa, Girish / Dutta, Tapas / Agarwal, Amit / Chauhan, Yogesh Singh et al. | 2017
- 1375
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Metal-Free Fully Solution-Processable Flexible Electrolyte-Gated Carbon Nanotube Field Effect TransistorBhatt, Vijay Deep / Joshi, Saumya / Lugli, Paolo et al. | 2017
- 1380
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Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTsBalanethiram, Suresh / D'Esposito, Rosario / Chakravorty, Anjan / Fregonese, Sebastien / Zimmer, Thomas et al. | 2017
- 1385
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Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave AnnealingZhang, Lin-Qing / Liu, Zhuo / Zhao, Sheng-Xun / Lin, Min-Zhi / Wang, Peng-Fei et al. | 2017
- 1390
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Current Degradation by Carrier Recombination in a Poly-Si TFET With Gate-Drain UnderlappingMa, William Cheng-Yu et al. | 2017
- 1394
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Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBSLee, Kung-Yen / Liu, Yuan-Heng / Wang, Sheng-Chung / Chan, Le-Shan et al. | 2017
- 1399
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Considerations for Static Energy Reduction in Digital CMOS ICs Using NEMS Power GatingSankar, Sivaneswaran / Kumar, Ulayil Sajesh / Goel, Mayank / Baghini, Maryam Shojaei / Rao, Valipe Ramgopal et al. | 2017
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A Novel TCAD-Based Thermal Extraction Approach for Nanoscale FinFETsKumar, U. Sajesh / Rao, V. Ramgopal et al. | 2017
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Erratum to “Design Issues for Performance Enhancement in Nanostructured Silicon Oxide Biosensors: Modeling the Frequency Response”Ghosh, H. / Kundu, D. / RoyChaudhuri, C. et al. | 2017
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Front cover| 2017
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IEEE Transactions on Electron Devices publication information| 2017
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IEEE Transactions on Electron Devices information for authors| 2017
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Blank page| 2017