Physical insights into the nature of gate-induced drain leakage in ultrashort channel nanowire FETs (Englisch)
- Neue Suche nach: Sahay, Shubham
- Neue Suche nach: Sahay, Shubham
- Neue Suche nach: Kumar, Mamidala Jagadesh
In:
IEEE transactions on electron devices
;
64
, 6
; 2604
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Physical insights into the nature of gate-induced drain leakage in ultrashort channel nanowire FETs
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Beteiligte:Sahay, Shubham ( Autor:in ) / Kumar, Mamidala Jagadesh
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Erschienen in:IEEE transactions on electron devices ; 64, 6 ; 2604
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2017
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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