Optical property and crystalline quarity of Si and Ge added β-$ Ga_{2} $$ O_{3} $ thin films (Englisch)
- Neue Suche nach: Takakura, K.
- Neue Suche nach: Kudou, T.
- Neue Suche nach: Hayama, K.
- Neue Suche nach: Shigaki, K.
- Neue Suche nach: Ohyama, H.
- Neue Suche nach: Kayamoto, K.
- Neue Suche nach: Shibuya, M.
- Neue Suche nach: Takakura, K.
- Neue Suche nach: Kudou, T.
- Neue Suche nach: Hayama, K.
- Neue Suche nach: Shigaki, K.
- Neue Suche nach: Ohyama, H.
- Neue Suche nach: Kayamoto, K.
- Neue Suche nach: Shibuya, M.
In:
Journal of Materials Science: Materials in Electronics
;
19
, 2
; 167-170
;
2007
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Optical property and crystalline quarity of Si and Ge added β-$ Ga_{2} $$ O_{3} $ thin films
-
Beteiligte:Takakura, K. ( Autor:in ) / Kudou, T. ( Autor:in ) / Hayama, K. ( Autor:in ) / Shigaki, K. ( Autor:in ) / Ohyama, H. ( Autor:in ) / Kayamoto, K. ( Autor:in ) / Shibuya, M. ( Autor:in )
-
Erschienen in:Journal of Materials Science: Materials in Electronics ; 19, 2 ; 167-170
-
Verlag:
- Neue Suche nach: Springer US
- Neue Suche nach: Springer
-
Erscheinungsort:Norwell, Mass.
-
Erscheinungsdatum:2007
-
ISSN:
-
ZDBID:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 275/5620
- Neue Suche nach: 51.40 / 33.61 / 51.10 / 53.09
- Weitere Informationen zu Basisklassifikation
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 19, Ausgabe 2
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 97
-
EditorialMcNally, Patrick et al. | 2007
- 99
-
Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporationLucas, Francis Olabanji / Mitra, A. / McNally, P. J. / O’Reilly, L. / Daniels, S. / Natarajan, Gomathi / Durose, K. / Proskuryakov, Y. Y. / Cameron, D. C. et al. | 2007
- 103
-
Electrical studies on sputtered CuCl thin filmsNatarajan, Gomathi / Rajendra Kumar, R. T. / Daniels, S. / Cameron, D. C. / McNally, P. J. et al. | 2007
- 107
-
Non-equilibrium Green’s function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structureFitriawan, Helmy / Ogawa, Matsuto / Souma, Satofumi / Miyoshi, Tanroku et al. | 2007
- 111
-
Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in SiMorooka, M. et al. | 2007
- 115
-
In-line characterization of dielectric constant and leakage currents of low-k films with corona charge methodFossati, D. / Beitia, C. / Plantier, L. / Imbert, G. / Passefort, S. / Desbois, M. / Volpi, F. / Royer, J.-C. et al. | 2007
- 119
-
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substratesMcNeill, D. W. / Bhattacharya, S. / Wadsworth, H. / Ruddell, F. H. / Mitchell, S. J. N. / Armstrong, B. M. / Gamble, H. S. et al. | 2007
- 125
-
Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognitionMatsui, Y. / Miyoshi, Y. et al. | 2007
- 131
-
Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxyUsui, Hiroyuki / Yasuda, Hidehiro / Mori, Hirotaro et al. | 2007
- 137
-
In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAsReentilä, O. / Lankinen, A. / Mattila, M. / Säynätjoki, A. / Tuomi, T. O. / Lipsanen, H. / O’Reilly, L. / McNally, P. J. et al. | 2007
- 143
-
Dislocations at the interface between sapphire and GaNLankinen, A. / Lang, T. / Suihkonen, S. / Svensk, O. / Säynätjoki, A. / Tuomi, T. O. / McNally, P. J. / Odnoblyudov, M. / Bougrov, V. / Danilewsky, A. N. et al. | 2007
- 149
-
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxySäynätjoki, A. / Lankinen, A. / Tuomi, T. O. / McNally, P. J. / Danilewsky, A. / Zhilyaev, Y. / Fedorov, L. et al. | 2007
- 155
-
UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrixPrieto, A. C. / Torres, A. / Jiménez, J. / Rodríguez, A. / Sangrador, J. / Rodríguez, T. et al. | 2007
- 161
-
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transientsHayama, K. / Takakura, K. / Ohyama, H. / Rafí, J. M. / Mercha, A. / Simoen, E. / Claeys, C. et al. | 2007
- 167
-
Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin filmsTakakura, K. / Kudou, T. / Hayama, K. / Shigaki, K. / Ohyama, H. / Kayamoto, K. / Shibuya, M. et al. | 2007
- 171
-
Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiationOhyama, H. / Shitogiden, H. / Takakura, K. / Shigaki, K. / Kuboyama, S. / Kamesawa, C. / Simoen, E. / Claeys, C. et al. | 2007
- 175
-
Degradation of SiC-MESFETs by irradiationOhyama, H. / Takakura, K. / Uemura, K. / Shigaki, K. / Kudou, T. / Matsumoto, T. / Arai, M. / Kuboyama, S. / Kamezawa, C. / Simoen, E. et al. | 2007
- 179
-
Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour depositionIamraksa, P. / Lloyd, N. S. / Bagnall, D. M. et al. | 2007
- 183
-
Double-polysilicon self-aligned lateral bipolar transistorsPengpad, P. / Bagnall, D. M. et al. | 2007
- 189
-
High temperature assessment of nitride-based devicesCuerdo, R. / Pedrós, J. / Navarro, A. / Braña, A. F. / Pau, J. L. / Muñoz, E. / Calle, F. et al. | 2007
- 195
-
GaN based high temperature strain gaugesTilak, V. / Jiang, J. / Batoni, P. / Knobloch, A. et al. | 2007
- 199
-
Dislocations of ZnO single crystals examined by X-ray topography and photoluminescenceYoshino, K. / Yoneta, M. / Yonenaga, I. et al. | 2007
- 203
-
Structural, optical and electrical characterization of undoped ZnMgO film grown by spray pyrolysis methodYoshino, K. / Oyama, S. / Yoneta, M. et al. | 2007