Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator (Englisch)
- Neue Suche nach: Aldegunde, M.
- Neue Suche nach: García-Loureiro, A. J.
- Neue Suche nach: Kalna, K.
- Neue Suche nach: Asenov, A.
- Neue Suche nach: Aldegunde, M.
- Neue Suche nach: García-Loureiro, A. J.
- Neue Suche nach: Kalna, K.
- Neue Suche nach: Asenov, A.
In:
Journal of Computational Electronics
;
5
, 4
; 311-314
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator
-
Beteiligte:Aldegunde, M. ( Autor:in ) / García-Loureiro, A. J. ( Autor:in ) / Kalna, K. ( Autor:in ) / Asenov, A. ( Autor:in )
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Erschienen in:Journal of Computational Electronics ; 5, 4 ; 311-314
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Verlag:
- Neue Suche nach: Kluwer Academic Publishers-Plenum Publishers
- Neue Suche nach: Kluwer Academic Publ.
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Erscheinungsort:Norwell, Mass. [u.a.]
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Erscheinungsdatum:2006
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 / 53.52 / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 Computersimulation / 53.52 Elektronische Schaltungen / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03 Methoden und Techniken der Elektrotechnik -
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