Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including –$$\hbox {NH}_{2}$$ and –COOH groups (Englisch)
- Neue Suche nach: Rodríguez, S. J.
- Neue Suche nach: Makinistian, L.
- Neue Suche nach: Albanesi, E.
- Neue Suche nach: Rodríguez, S. J.
- Neue Suche nach: Makinistian, L.
- Neue Suche nach: Albanesi, E.
In:
Journal of Computational Electronics
;
16
, 1
; 127-132
;
2016
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including –$$\hbox {NH}_{2}$$ and –COOH groups
-
Beteiligte:
-
Erschienen in:Journal of Computational Electronics ; 16, 1 ; 127-132
-
Verlag:
- Neue Suche nach: Springer US
- Neue Suche nach: Kluwer Academic Publ.
-
Erscheinungsort:Norwell, Mass. [u.a.]
-
Erscheinungsdatum:2016
-
ISSN:
-
ZDBID:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 / 53.52 / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03
- Weitere Informationen zu Basisklassifikation
-
Schlagwörter:
-
Klassifikation:
BKL: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 Computersimulation / 53.52 Elektronische Schaltungen / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03 Methoden und Techniken der Elektrotechnik -
Datenquelle:
Inhaltsverzeichnis – Band 16, Ausgabe 1
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Structural stability, electronic structure, and novel transport properties with high thermoelectric performances of ZrIrX (X As, Bi, and Sb)Benallou, Yassine / Amara, Kadda / Doumi, Bendouma / Arbouche, Omar / Zemouli, Mostefa / Bekki, B. / Mokaddem, Allel et al. | 2016
- 1
-
Structural stability, electronic structure, and novel transport properties with high thermoelectric performances of ZrIrX (X Formula Not Shown As, Bi, and Sb)Benallou, Y. / Amara, K. / Doumi, B. / Arbouche, O. / Zemouli, M. / Bekki, B. / Mokaddem, A. et al. | 2017
- 12
-
Magnetic properties of bilayer graphene: a Monte Carlo studyMasrour, R. / Jabar, A. et al. | 2016
- 18
-
Self-energy of cold atoms in a long-range disordered optical potentialYedjour, A. / Bahlouli, S. / Doumi, B. / Mokaddem, A. / Khachai, A. I. / Hamdache, F. et al. | 2017
- 24
-
Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistorsRaad, Bhagwan Ram / Sharma, Dheeraj / Nigam, Kaushal / Kondekar, Pravin et al. | 2016
- 30
-
Heterogate junctionless tunnel field-effect transistor: future of low-power devicesRahi, Shiromani Balmukund / Asthana, Pranav / Gupta, Shoubhik et al. | 2016
- 39
-
Double aperture double-gate vertical high-electron-mobility transistorTripathi, Ball Mukund Mani / Das, Shyama Prasad et al. | 2016
- 47
-
Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applicationsKumar, Subindu / Kumari, Amrita / Das, Mukul Kumar et al. | 2016
- 61
-
Quantum analysis based extraction of frequency dependent intrinsic and extrinsic parameters for GEWE-SiNW MOSFETGupta, Neha / Chaujar, Rishu et al. | 2017
- 74
-
Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulationNilamani, S. / Ramakrishnan, V. N. et al. | 2017
- 83
-
Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plateCheng, Kun / Hu, Shengdong / Jiang, Yuyu / Yuan, Qi / Yang, Dong / Huang, Ye / Lei, Jianmei / Lin, Zhi / Zhou, Xichuan / Tang, Fang et al. | 2017
- 90
-
Application of generalized logistic functions in surface-potential-based MOSFET modelingKevkić, Tijana / Stojanović, Vladica / Joksimović, Dušan et al. | 2016
- 98
-
A modified nanoelectronic spiking neuron modelPês, Beatriz dos Santos / Guimarães, Janaina Gonçalves / Bonfim, Marlio José do Couto et al. | 2016
- 106
-
Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selectionSethi, Divya / Kaur, Manjit / Singh, Gurmohan et al. | 2017
- 115
-
A GMR device based on a magnetic nanostructure with a $$\delta $$-dopingLiu, Xu-Hui / Tang, Zheng-Hua / Kong, Yong-Hong / Fu, Xi / Gong, Yan-Jun et al. | 2016
- 115
-
A GMR device based on a magnetic nanostructure with a Formula Not Shown -dopingLiu, X. H. / Tang, Z. H. / Kong, Y. H. / Fu, X. / Gong, Y. J. et al. | 2017
- 115
-
A GMR device based on a magnetic nanostructure with a -dopingLiu, Xu-Hui / Tang, Zheng-Hua / Kong, Yong-Hong / Fu, Xi / Gong, Yan-Jun et al. | 2016
- 120
-
A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulatorGhosh, Bahniman / Dey, Rik / Register, Leonard F. / Banerjee, Sanjay K. et al. | 2017
- 127
-
Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including – and –COOH groupsRodríguez, S. J. / Makinistian, L. / Albanesi, E. et al. | 2016
- 127
-
Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including –$$\hbox {NH}_{2}$$ and –COOH groupsRodríguez, S. J. / Makinistian, L. / Albanesi, E. et al. | 2016
- 127
-
Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including – Formula Not Shown and –COOH groupsRodríguez, S. J. / Makinistian, L. / Albanesi, E. et al. | 2017
- 133
-
Modeling the performance characteristics of ZnO-based heterojunction photodetectorsZavvari, Mahdi / Mohammadi, Shima / Yusefli, Amir et al. | 2017
- 139
-
Design of plasmonic half-adder and half-subtractor circuits employing nonlinear effect in Mach–Zehnder interferometerKumar, Santosh / Singh, Lokendra / Raghuwanshi, Sanjeev Kumar et al. | 2016
- 148
-
Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equationKim, Kyoung-Youm / Kim, Saehwa / Tang, Ting-wei et al. | 2017
- 155
-
Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applicationsBhattacharyya, A. / Ramesh, R. et al. | 2016
- 162
-
A multi-objective synthesis methodology for majority/minority logic networksSarvaghad-Moghaddam, Moein / Orouji, Ali A. / Houshmand, Monireh et al. | 2016
- 180
-
Thermal conductivity reduction by embedding nanoparticlesMascali, Giovanni et al. | 2016
- 190
-
Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applicationsNaugarhiya, Alok / Wakhradkar, Pankaj / Kondekar, Pravin N. / Patil, Ganesh C. / Patrikar, Rajendra M. et al. | 2017
- 202
-
Electromechanical modeling of stretchable interconnectsDong, Ziming / Duan, Baoxing / Cao, Zhen / Yang, Yintang et al. | 2017
- 210
-
Asymmetrically fed octagonal Sierpinski band-notched super-wideband antennaSinghal, Sarthak et al. | 2017