Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices (Englisch)
- Neue Suche nach: Jian, Jiaying
- Weitere Informationen zu Jian, Jiaying:
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https://orcid.org/0000-0002-4369-2022
- Neue Suche nach: Chang, Honglong
- Neue Suche nach: Vena, Arnaud
- Neue Suche nach: Sorli, Brice
- Neue Suche nach: Jian, Jiaying
- Weitere Informationen zu Jian, Jiaying:
-
https://orcid.org/0000-0002-4369-2022
- Neue Suche nach: Chang, Honglong
- Neue Suche nach: Vena, Arnaud
- Neue Suche nach: Sorli, Brice
In:
Microsystem Technologies
;
23
, 6
; 1719-1725
;
2015
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices
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Beteiligte:Jian, Jiaying ( Autor:in ) / Chang, Honglong ( Autor:in ) / Vena, Arnaud ( Autor:in ) / Sorli, Brice ( Autor:in )
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Erschienen in:Microsystem Technologies ; 23, 6 ; 1719-1725
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Verlag:
- Neue Suche nach: Springer Berlin Heidelberg
- Neue Suche nach: Springer
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Erscheinungsort:Berlin
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Erscheinungsdatum:2015
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 50.94
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 50.94 Mikrosystemtechnik, Nanotechnologie -
Datenquelle:
Inhaltsverzeichnis – Band 23, Ausgabe 6
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