Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using $ La_{2} $$ O_{3} $ gate dielectric (Englisch)
- Neue Suche nach: Feng, Qian
- Neue Suche nach: Wang, Qiang
- Neue Suche nach: Xing, Tao
- Neue Suche nach: Li, Qian
- Neue Suche nach: Hao, Yue
- Neue Suche nach: Feng, Qian
- Neue Suche nach: Wang, Qiang
- Neue Suche nach: Xing, Tao
- Neue Suche nach: Li, Qian
- Neue Suche nach: Hao, Yue
In:
Science China Technological Sciences
;
56
, 3
; 629-632
;
2013
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using $ La_{2} $$ O_{3} $ gate dielectric
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Beteiligte:Feng, Qian ( Autor:in ) / Wang, Qiang ( Autor:in ) / Xing, Tao ( Autor:in ) / Li, Qian ( Autor:in ) / Hao, Yue ( Autor:in )
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Erschienen in:Science China Technological Sciences ; 56, 3 ; 629-632
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Verlag:
- Neue Suche nach: SP Science China Press
- Neue Suche nach: Science China Press
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Erscheinungsort:Beijing
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Erscheinungsdatum:2013
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 605
- Weitere Informationen zu Dewey Decimal Classification
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Schlagwörter:
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Klassifikation:
DDC: 605 -
Datenquelle:
Inhaltsverzeichnis – Band 56, Ausgabe 3
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