ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy (Englisch)
- Neue Suche nach: Xiu, F. X.
- Neue Suche nach: Yang, Z.
- Neue Suche nach: Zhao, D. T.
- Neue Suche nach: Liu, J. L.
- Neue Suche nach: Alim, K. A.
- Neue Suche nach: Balandin, A. A.
- Neue Suche nach: Itkis, M. E.
- Neue Suche nach: Haddon, R. C.
- Neue Suche nach: Xiu, F. X.
- Neue Suche nach: Yang, Z.
- Neue Suche nach: Zhao, D. T.
- Neue Suche nach: Liu, J. L.
- Neue Suche nach: Alim, K. A.
- Neue Suche nach: Balandin, A. A.
- Neue Suche nach: Itkis, M. E.
- Neue Suche nach: Haddon, R. C.
In:
Journal of Electronic Materials
;
35
, 4
; 691-694
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy
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Beteiligte:Xiu, F. X. ( Autor:in ) / Yang, Z. ( Autor:in ) / Zhao, D. T. ( Autor:in ) / Liu, J. L. ( Autor:in ) / Alim, K. A. ( Autor:in ) / Balandin, A. A. ( Autor:in ) / Itkis, M. E. ( Autor:in ) / Haddon, R. C. ( Autor:in )
-
Erschienen in:Journal of Electronic Materials ; 35, 4 ; 691-694
-
Verlag:
- Neue Suche nach: Springer-Verlag
- Neue Suche nach: TMS
-
Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:2006
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ISSN:
-
ZDBID:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
-
Sprache:Englisch
- Neue Suche nach: 51.40 / 33.61 / 51.10 / 53.09
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 35, Ausgabe 4
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