Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator (Englisch)
- Neue Suche nach: Balakumar, S.
- Neue Suche nach: Buddharaju, K. D.
- Neue Suche nach: Tan, B.
- Neue Suche nach: Rustagi, S. C.
- Neue Suche nach: Singh, N.
- Neue Suche nach: Kumar, R.
- Neue Suche nach: Lo, G. Q.
- Neue Suche nach: Tripathy, S.
- Neue Suche nach: Kwong, D. L.
- Neue Suche nach: Balakumar, S.
- Neue Suche nach: Buddharaju, K. D.
- Neue Suche nach: Tan, B.
- Neue Suche nach: Rustagi, S. C.
- Neue Suche nach: Singh, N.
- Neue Suche nach: Kumar, R.
- Neue Suche nach: Lo, G. Q.
- Neue Suche nach: Tripathy, S.
- Neue Suche nach: Kwong, D. L.
In:
Journal of Electronic Materials
;
38
, 3
; 443-448
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator
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Beteiligte:Balakumar, S. ( Autor:in ) / Buddharaju, K. D. ( Autor:in ) / Tan, B. ( Autor:in ) / Rustagi, S. C. ( Autor:in ) / Singh, N. ( Autor:in ) / Kumar, R. ( Autor:in ) / Lo, G. Q. ( Autor:in ) / Tripathy, S. ( Autor:in ) / Kwong, D. L. ( Autor:in )
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Erschienen in:Journal of Electronic Materials ; 38, 3 ; 443-448
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Verlag:
- Neue Suche nach: Springer US
- Neue Suche nach: TMS
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:2009
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.40 / 33.61 / 51.10 / 53.09
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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