Interface recombination velocity measurement in $ SiO_{2} $/Si (Englisch)
- Neue Suche nach: Ilahi, S.
- Neue Suche nach: Yacoubi, N.
- Neue Suche nach: Ilahi, S.
- Neue Suche nach: Yacoubi, N.
In:
Semiconductors
;
48
, 3
; 302-306
;
2014
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Interface recombination velocity measurement in $ SiO_{2} $/Si
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Beteiligte:Ilahi, S. ( Autor:in ) / Yacoubi, N. ( Autor:in )
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Erschienen in:Semiconductors ; 48, 3 ; 302-306
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Verlag:
- Neue Suche nach: Pleiades Publishing
- Neue Suche nach: Pleiades Publ.
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2014
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.00
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Klassifikation:
BKL: 53.00 Elektrotechnik: Allgemeines Lokalklassifikation TIB: 770/3480/8000 -
Datenquelle:
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