Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field (Englisch)
- Neue Suche nach: Askerov, B. M.
- Neue Suche nach: Figarova, S. R.
- Neue Suche nach: Huseynov, H. I.
- Neue Suche nach: Figarov, V. R.
- Neue Suche nach: Askerov, B. M.
- Neue Suche nach: Figarova, S. R.
- Neue Suche nach: Huseynov, H. I.
- Neue Suche nach: Figarov, V. R.
In:
Semiconductors
;
48
, 6
; 748-753
;
2014
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field
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Beteiligte:Askerov, B. M. ( Autor:in ) / Figarova, S. R. ( Autor:in ) / Huseynov, H. I. ( Autor:in ) / Figarov, V. R. ( Autor:in )
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Erschienen in:Semiconductors ; 48, 6 ; 748-753
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Verlag:
- Neue Suche nach: Pleiades Publishing
- Neue Suche nach: Pleiades Publ.
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2014
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.00
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/3480/8000
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Klassifikation:
BKL: 53.00 Elektrotechnik: Allgemeines Lokalklassifikation TIB: 770/3480/8000 -
Datenquelle:
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