Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an $ Ar^{+} $ Ion Beam (Englisch)
- Neue Suche nach: Mikoushkin, V. M.
- Neue Suche nach: Bryzgalov, V. V.
- Neue Suche nach: Makarevskaya, E. A.
- Neue Suche nach: Solonitsyna, A. P.
- Neue Suche nach: Marchenko, D.E.
- Neue Suche nach: Mikoushkin, V. M.
- Neue Suche nach: Bryzgalov, V. V.
- Neue Suche nach: Makarevskaya, E. A.
- Neue Suche nach: Solonitsyna, A. P.
- Neue Suche nach: Marchenko, D.E.
In:
Semiconductors
;
52
, 16
; 2057-2060
;
2018
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an $ Ar^{+} $ Ion Beam
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Beteiligte:Mikoushkin, V. M. ( Autor:in ) / Bryzgalov, V. V. ( Autor:in ) / Makarevskaya, E. A. ( Autor:in ) / Solonitsyna, A. P. ( Autor:in ) / Marchenko, D.E. ( Autor:in )
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Erschienen in:Semiconductors ; 52, 16 ; 2057-2060
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Verlag:
- Neue Suche nach: Pleiades Publishing
- Neue Suche nach: Pleiades Publ.
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2018
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.00
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/3480/8000
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Klassifikation:
BKL: 53.00 Elektrotechnik: Allgemeines Lokalklassifikation TIB: 770/3480/8000 -
Datenquelle:
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