Influence of charge flow along a semiconductor surface on the nature of the multiplication coefficient in a silicon-wide-gap layer structure (Englisch)
- Neue Suche nach: Sadygov, Z. Ya.
- Neue Suche nach: Jejer, T. V.
- Neue Suche nach: Sadygov, Z. Ya.
- Neue Suche nach: Jejer, T. V.
In:
Technical Physics Letters
;
23
, 4
; 324-325
;
1997
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Influence of charge flow along a semiconductor surface on the nature of the multiplication coefficient in a silicon-wide-gap layer structure
-
Beteiligte:Sadygov, Z. Ya. ( Autor:in ) / Jejer, T. V. ( Autor:in )
-
Erschienen in:Technical Physics Letters ; 23, 4 ; 324-325
-
Verlag:
- Neue Suche nach: Nauka/Interperiodica
- Neue Suche nach: Pleiades Publ.
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Erscheinungsort:Road Town, Tortola, British Virgin Islands
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Erscheinungsdatum:1997
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ISSN:
-
ZDBID:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/3400/8000
- Neue Suche nach: 33.00
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
Lokalklassifikation TIB: 770/3400/8000 BKL: 33.00 Physik: Allgemeines -
Datenquelle:
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