Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate (Englisch)
Freier Zugriff
- Neue Suche nach: Benyahia, D.
- Neue Suche nach: Kubiszyn, Ł.
- Neue Suche nach: Michalczewski, K.
- Neue Suche nach: Kębłowski, A.
- Neue Suche nach: Martyniuk, P.
- Neue Suche nach: Piotrowski, J.
- Neue Suche nach: Rogalski, A.
- Neue Suche nach: Benyahia, D.
- Neue Suche nach: Kubiszyn, Ł.
- Neue Suche nach: Michalczewski, K.
- Neue Suche nach: Kębłowski, A.
- Neue Suche nach: Martyniuk, P.
- Neue Suche nach: Piotrowski, J.
- Neue Suche nach: Rogalski, A.
In:
Optical and Quantum Electronics
;
48
, 9
;
2016
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
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Beteiligte:Benyahia, D. ( Autor:in ) / Kubiszyn, Ł. ( Autor:in ) / Michalczewski, K. ( Autor:in ) / Kębłowski, A. ( Autor:in ) / Martyniuk, P. ( Autor:in ) / Piotrowski, J. ( Autor:in ) / Rogalski, A. ( Autor:in )
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Erschienen in:Optical and Quantum Electronics ; 48, 9
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Verlag:
- Neue Suche nach: Springer US
- Neue Suche nach: Springer Science + Business Media B.V
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Erscheinungsort:Dordrecht [u.a.]
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Erscheinungsdatum:2016
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
- Neue Suche nach: 33.38 / 33.72$jHalbleiterphysik / 33.72 / 33.23$jQuantenphysik / 53.54$jOptoelektronik / 33.18$jOptik / 33.23 / 52.88$jFeinwerktechnik$jMechatronik / 33.18 / 53.54 / 52.88 / 33.38$jQuantenoptik$jnichtlineare Optik
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 33.38 Quantenoptik, nichtlineare Optik / 33.72$jHalbleiterphysik / 33.72 Halbleiterphysik / 33.23$jQuantenphysik / 53.54$jOptoelektronik / 33.18$jOptik / 33.23 Quantenphysik / 52.88$jFeinwerktechnik$jMechatronik / 33.18 Optik / 53.54 Optoelektronik / 52.88 Feinwerktechnik, Mechatronik / 33.38$jQuantenoptik$jnichtlineare Optik -
Datenquelle:
Inhaltsverzeichnis – Band 48, Ausgabe 9
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