GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements (Englisch)
- Neue Suche nach: Mansfield, L. M.
- Neue Suche nach: Bertness, K. A.
- Neue Suche nach: Blanchard, P. T.
- Neue Suche nach: Harvey, T. E.
- Neue Suche nach: Sanders, A. W.
- Neue Suche nach: Sanford, N. A.
- Neue Suche nach: Mansfield, L. M.
- Neue Suche nach: Bertness, K. A.
- Neue Suche nach: Blanchard, P. T.
- Neue Suche nach: Harvey, T. E.
- Neue Suche nach: Sanders, A. W.
- Neue Suche nach: Sanford, N. A.
In:
Journal of Electronic Materials
;
38
, 4
; 495-504
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements
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Beteiligte:Mansfield, L. M. ( Autor:in ) / Bertness, K. A. ( Autor:in ) / Blanchard, P. T. ( Autor:in ) / Harvey, T. E. ( Autor:in ) / Sanders, A. W. ( Autor:in ) / Sanford, N. A. ( Autor:in )
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Erschienen in:Journal of Electronic Materials ; 38, 4 ; 495-504
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Verlag:
- Neue Suche nach: Springer US
- Neue Suche nach: TMS
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Erscheinungsort:Warrendale, Pa
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Erscheinungsdatum:2009
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
- Neue Suche nach: 53.09$jWerkstoffe der Elektrotechnik / 51.40$jWerkstoffe für bestimmte Anwendungsgebiete / 33.61$jFestkörperphysik / 51.10$jMetallphysik / 51.40 / 33.61 / 51.10 / 53.09
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 53.09$jWerkstoffe der Elektrotechnik / 51.40$jWerkstoffe für bestimmte Anwendungsgebiete / 33.61$jFestkörperphysik / 51.10$jMetallphysik / 51.40 Werkstoffe für bestimmte Anwendungsgebiete / 33.61 Festkörperphysik / 51.10 Metallphysik / 53.09 Werkstoffe der Elektrotechnik -
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