Interlayer interaction and exciton spectrum ofGaSe at low temperatures (Englisch)
- Neue Suche nach: Abdullaev, G. B.
- Neue Suche nach: Belenkii, G. L.
- Neue Suche nach: Salaev, E. Yu.
- Neue Suche nach: Suleimanov, R. A.
- Neue Suche nach: Abdullaev, G. B.
- Neue Suche nach: Belenkii, G. L.
- Neue Suche nach: Salaev, E. Yu.
- Neue Suche nach: Suleimanov, R. A.
In:
Il Nuovo Cimento B (1971-1996)
;
38
, 2
; 469-477
;
1977
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Interlayer interaction and exciton spectrum ofGaSe at low temperatures
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Beteiligte:Abdullaev, G. B. ( Autor:in ) / Belenkii, G. L. ( Autor:in ) / Salaev, E. Yu. ( Autor:in ) / Suleimanov, R. A. ( Autor:in )
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Erschienen in:Il Nuovo Cimento B (1971-1996) ; 38, 2 ; 469-477
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Verlag:
- Neue Suche nach: Società Italiana di Fisica
- Neue Suche nach: Italian Physical Soc.
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Erscheinungsort:[S.l.]
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Erscheinungsdatum:1977
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ISSN:
-
ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
- Neue Suche nach: 33.00 / 33.00
- Weitere Informationen zu Basisklassifikation
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 38, Ausgabe 2
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 153
-
Electronic band structure for the polytypes ofGaSeDepeursinge, Y. et al. | 1977
- 159
-
Optical constants ofε-GaSeLe Toullec, R. / Piccioli, N. / Mejatty, M. / Balkanski, M. et al. | 1977
- 168
-
The electronic ground state of the layer compoundsZrS2, $ TiS_{2} $ andTiSe2Isomäki, H. / von Boehm, J. / Krusius, P. et al. | 1977
- 176
-
Effects of anisotropy on the electroreflectance spectra ofGaSe at oblique incidenceBalzarotti, A. / Picozzi, P. / Santucci, S. et al. | 1977
- 185
-
Modulation spectroscopy of semiconducting group IV-A and IV-B dichalcogenidesCamassel, J. / Kohn, S. / Shen, Y. R. / Lévy, F. et al. | 1977
- 196
-
Reflectivity of layer-type transition metal dichalcogenides from 6 eV to 40 eVMamy, R. / Thieblemont, B. / Martin, L. / Pradal, F. et al. | 1977
- 206
-
Determination of the Fermi surface of $ AuTe_{2} $I by Shubnikov-de Haas effectSchmidt, C. / Gmelin, E. / Alpen, U. V. et al. | 1977
- 216
-
The direct evaluation of electronic band structures of layered solids using angle-resolved photoemissionWilliams, P. M. et al. | 1977
- 226
-
Polarization selection rules for the photoemission spectra of III–VI semiconductorsRowe, J. E. / Margaritondo, G. / Kasper, H. et al. | 1977
- 234
-
Conduction band photoelectron spectroscopy of layered semiconductorsMargaritondo, G. / Rowe, J. E. / Kasper, H. et al. | 1977
- 241
-
The band structure of α-$ MoTe_{2} $ by photoelectron spectroscopyMcGovern, I. T. / Williams, R. H. et al. | 1977
- 248
-
New structure in the XPS valence band spectra of the layered crystal $ As_{2} $$ S_{3} $ and its amorphous analoguesSalaneck, W. R. / Zallen, R. et al. | 1977
- 256
-
Lattice dynamics of layered structuresWakabayashi, N. et al. | 1977
- 263
-
Acoustic phonons in $ SnSe_{2} $Brebner, J. L. / Jandl, S. / Powell, B. M. et al. | 1977
- 271
-
Raman scattering and structural properties of $ MoO_{3} $Py, M. A. / Schmid, Ph. E. / Vallin, J. T. et al. | 1977
- 280
-
Suppression of antiferroelectricity in $ TiSe_{2} $ by excess carriersWhite, R. M. / Lucovsky, G. et al. | 1977
- 290
-
Optical-phonon anisotropies in layered crystalsLucovsky, G. / White, R. M. et al. | 1977
- 301
-
Resonant Raman scattering in GaSe and $ GaS_{x} $$ Se_{1−x} $Chiang, T. C. / Camassel, J. / Voitchovsky, J. P. / Shen, Y. R. et al. | 1977
- 309
-
Interlayer and intralayer forces in halide perovskite-type layer structuresGeick, R. / Lehner, N. / Strobel, K. H. et al. | 1977
- 319
-
Photoelectromagnetic effect in layered compoundsAdduci, F. / Catalano, I. M. / Ferrara, M. / Lugarà, M. et al. | 1977
- 327
-
Anomalous impurity conductivity inn-GaSe andn-GaSAugelli, V. / Manfredotti, C. / Murri, R. / Piccolo, R. / Vasanelli, L. et al. | 1977
- 337
-
Electronic transport and cyclotron resonance in red mercuric iodideBloch, P. D. / Hodby, J. W. / Jenkins, T. E. / Stacey, D. W. / Schwab, C. et al. | 1977
- 345
-
Photovoltaic properties of GaSe and InSe junctionsSegura, A. / Besson, J. M. / Chevy, A. / Martin, M. S. et al. | 1977
- 352
-
GaSe−SnO2 heterojunction and its electroluminescenceTatsuyama, C. / Ichimura, S. et al. | 1977
- 359
-
Single-crystal growth of layered crystalsLévy, F. et al. | 1977
- 369
-
ESR investigations of defects in $ MoO_{3} $ single crystalsJuryska, R. / Bill, H. et al. | 1977
-
P-T-X phase diagram for Ti−S from (60÷75) atomic % sulfurMikkelsen, J. C. et al. | 2007
- 387
-
Determination of the surface structure of layered compounds by low-energy electron diffractionMrstik, B. J. / Kaplan, R. / Reinecke, T. L. / Van Hove, M. / Tong, S. Y. et al. | 1977
- 396
-
Magnetic-field effects on the Van der Waals interaction of a semiconductor surface plasma with a neutral atomMorgenstern Horing, N. J. / Silverman, S. et al. | 1977
- 403
-
Optical and dynamical properties of graphite nitratesAvogadro, A. / Bellodi, G. / Borghesi, A. / Samoggia, G. / Villa, M. et al. | 1977
- 410
-
Electronic structure of donor-type graphite intercalation compoundsGuérard, D. / Foley, G. M. T. / Zanini, M. / Fischer, J. E. et al. | 1977
- 418
-
Fine-structure splitting of the ground-state excitons in layer materials with stacking faultsForney, J. J. / Maschke, K. / Mooser, E. et al. | 1977
- 423
-
Wannier excitons in layered semiconductorsGerlach, B. / Pollmann, J. et al. | 1977
- 433
-
Two-photon absorption in $ PbI_{2} $Fröhlich, D. / Kenklies, R. et al. | 1977
- 439
-
Excitons in mercury iodideAnedda, A. / Raga, F. / Grilli, E. / Guzzi, M. et al. | 1977
- 449
-
Optical properties of $ BiI_{3} $ single crystalsKaifu, Y. / Komatsu, T. / Aikami, T. et al. | 1977
- 459
-
Electroabsorption in laminatedGaSex$ S_{1−x} $ semiconductors in the fundamental-absorption edge regionAbdullayeva, S. G. / Gadjiyev, V. A. / Kerimova, T. G. / Salayev, E. Yu. et al. | 1977
- 469
-
Interlayer interaction and exciton spectrum ofGaSe at low temperaturesAbdullaev, G. B. / Belenkii, G. L. / Salaev, E. Yu. / Suleimanov, R. A. et al. | 1977
- 478
-
High-pressure effects in layer semiconductorsBesson, J. M. et al. | 1977
- 486
-
The effect of pressure on the optical-absorption edge in $ SnS_{2} $ and $ SnSe_{2} $Powell, M. J. / Grant, A. J. et al. | 1977
- 496
-
Phase transition in lead iodide under hydrostatic pressureCarillon, C. / Martinez, G. et al. | 1977
- 503
-
Anisotropy and temperature dependence ofHc2 in layer superconductor: Pure and Fe-doped 2H−$ NbSe_{2} $Muto, Y. / Noto, K. / Nakatsuji, H. / Toyota, N. et al. | 1977
- 511
-
Effect of anisotropy and strong electron-phonon coupling in the specific heat of layered 2H−$ NbSe_{2} $Noto, K. / Kobayashi, N. / Muto, Y. et al. | 1977
- 519
-
Superconducting properties of layered transition metal $ NbSe_{2} $ doped with MnGras, J. P. / Haen, P. / Monceau, P. / Waysand, G. / Molinie, P. / Rouxel, J. et al. | 1977
- 526
-
A study of far-IR optical and magneto-optical absorption in 2H-$ MoS_{2} $Kaplan, R. et al. | 1977
- 537
-
Charge density wavesRice, T. M. et al. | 1977
- 544
-
The origin of charge density waves in the 2H-polytypes of the group-V layer compoundsDoran, N. J. / Wexler, G. / Heine, V. / Riccò, B. et al. | 1977
- 552
-
Softening of the charge density wave at the superstructure transition in2H-$ TaSe_{2} $Steigmeier, E. F. / Harbeke, G. / Auderset, H. / DiSalvo, F. J. et al. | 1977
- 553
-
Collective modes andk=0 phonons of the CDW in 2H-$ TaSe_{2} $Tosatti, E. et al. | 1977
- 554
-
The effect of pressure on the charge density wave transitions in 4Hb $ TaS_{2} $Friend, R. H. / Frindt, R. F. / Jérome, D. / Grant, A. J. et al. | 1977
- 562
-
Thermo-optical response of layered group-V transition metal dichalcogenidesCampagnoli, G. / Gustinetti, A. / Stella, A. / Tosatti, E. et al. | 1977
- 571
-
The Fermi surface of 1T-$ VS_{2} $ and 4Hb-$ TaS_{2} $Wexler, G. / Woolley, A. / Doran, N. et al. | 1977
- 579
-
Multiphoton processes in layered structuresCatalano, I. M. / Cingolani, A. / Minafra, A. et al. | 1977
- 588
-
Emission mechanism in highly excited state of red $ HgI_{2} $Nakaoka, K. / Goto, T. / Nishina, Y. et al. | 1977
- 596
-
Luminescence due to exciton-electron and exciton-excitons collision in GaSeUgumori, T. / Masuda, K. / Namba, S. et al. | 1977
- 603
-
Polarization of luminescence spectra and electron-hole plasma radiation in GaSe single crystals at high level of excitationBaltramiejunas, R. / Narkevicius, V. / Skaistys, E. / Vaitkus, J. / Viscakas, J. et al. | 1977
- 610
-
High excitation intensity effects at different pump wave-lengths in $ PbI_{2} $Adduci, F. / Cingolani, A. / Ferrara, M. / Lugarà, M. / Minafra, A. et al. | 1977