0.1-μm high-aspect-ratio pattern replication and linewidth control (Englisch)
- Neue Suche nach: Chen, Zheng
- Neue Suche nach: Vladimirsky, Yuli
- Neue Suche nach: Cerrina, Franco
- Neue Suche nach: Lai, Barry P.
- Neue Suche nach: Yun, Wenbing
- Neue Suche nach: Gluskin, Efim S.
- Neue Suche nach: Chen, Zheng
- Neue Suche nach: Vladimirsky, Yuli
- Neue Suche nach: Cerrina, Franco
- Neue Suche nach: Lai, Barry P.
- Neue Suche nach: Yun, Wenbing
- Neue Suche nach: Gluskin, Efim S.
In:
Proc. SPIE
;
3331
; 591
;
1998
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:0.1-μm high-aspect-ratio pattern replication and linewidth control
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Beteiligte:Chen, Zheng ( Autor:in ) / Vladimirsky, Yuli ( Autor:in ) / Cerrina, Franco ( Autor:in ) / Lai, Barry P. ( Autor:in ) / Yun, Wenbing ( Autor:in ) / Gluskin, Efim S. ( Autor:in )
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Kongress:Emerging Lithographic Technologies II ; 1998 ; Santa Clara,CA,USA
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Erschienen in:Proc. SPIE ; 3331 ; 591
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:05.06.1998
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
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EUV optical design for a 100-nm CD imaging system (Invited Paper) [3331-01]Sweeney, D. W. / Hudyma, R. M. / Chapman, H. N. / Shafer, D. R. / SPIE et al. | 1998
- 2
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EUV optical design for a 100-nm CD imaging systemSweeney, Donald W. / Hudyma, Russell M. / Chapman, Henry N. / Shafer, David R. et al. | 1998
- 11
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Recent advances in the Sandia EUV 10x microstepperGoldsmith, John E. M. / Barr, Pamela K. / Berger, Kurt W. / Bernardez, Luis J. / Cardinale, Gregory F. / Darnold, Joel R. / Folk, Daniel R. / Haney, Steven J. / Henderson, Craig C. / Jefferson, Karen J. et al. | 1998
- 11
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Recent advances in the Sandia EUV 10x microstepper (Invited Paper) [3331-02]Goldsmith, J. E. M. / Barr, P. K. / Berger, K. W. / Bernardez, L. J. / SPIE et al. | 1998
- 20
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Three-aspherical-mirror system for EUV lithographyKinoshita, Hiroo / Watanabe, Takeo / Niibe, Masahito / Ito, Masaaki / Oizumi, H. / Yamanashi, Hiromasa / Murakami, Katsuhiko / Oshino, Tetsuya / Platonov, Yuriy Y. / Grupido, Nicola et al. | 1998
- 20
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Three-aspherical-mirror system for EUV lithography (Invited Paper) [3331-03]Kinoshita, H. / Watanabe, T. / Niibe, M. / Ito, M. / SPIE et al. | 1998
- 32
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Top-surface imaging resists for EUV lithography (Invited Paper) [3331-04]Henderson, C. C. / Wheeler, D. P. / Pollagi, T. P. / O'Connell, D. J. / SPIE et al. | 1998
- 32
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Top-surface imaging resists for EUV lithographyHenderson, Craig C. / Wheeler, David R. / Pollagi, Tim P. / O'Connell, Donna J. / Goldsmith, John E. M. / Fisher, Aaron / Cardinale, Gregory F. / Hutchinson, John M. / Rao, Veena et al. | 1998
- 42
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Multilayer reflective coatings for extreme-ultraviolet lithographyMontcalm, Claude / Bajt, Sasa / Mirkarimi, Paul B. / Spiller, Eberhard A. / Weber, Frank J. / Folta, James A. et al. | 1998
- 42
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Multilayer reflective coatings for extreme-ultraviolet lithography (Invited Paper) [3331-05]Montcalm, C. / Bajt, S. / Mirkarimi, P. B. / Spiller, E. A. / SPIE et al. | 1998
- 52
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Beamline for measurement and characterization of multilayer optics for EUV lithographyUnderwood, James H. / Gullikson, Eric M. et al. | 1998
- 52
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Beamline for measurement and characterization of multilayer optics for EUV lithography [3331-06]Underwood, J. H. / Gullikson, E. M. / SPIE et al. | 1998
- 62
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Multilayer coating and tests of a 10x extreme-ultraviolet lithographic cameraSpiller, Eberhard A. / Weber, Frank J. / Montcalm, Claude / Baker, Sherry L. / Gullikson, Eric M. / Underwood, James H. et al. | 1998
- 62
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Multilayer coating and tests of a 10 x extreme-ultraviolet lithographic camera [3331-07]Spiller, E. A. / Weber, F. J. / Montcalm, C. / Baker, S. L. / SPIE et al. | 1998
- 72
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Scattering from normal-incidence EUV opticsGullikson, Eric M. et al. | 1998
- 72
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Scattering from normal-incidence EUV optics (Invited Paper) [3331-08]Gullikson, E. M. / SPIE et al. | 1998
- 81
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High-power extreme-ultraviolet source based on gas jetsKubiak, Glenn D. / Bernardez, Luis J. / Krenz, Kevin D. et al. | 1998
- 81
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High-power extreme-ultraviolet source based on gas jets [3331-10]Kubiak, G. D. / Bernardez, L. J. / Krenz, K. D. / SPIE et al. | 1998
- 90
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90 Demonstration of a foil trap technique to eliminate laser plasma atomic debris and small particulates [3331-87]Shmaenok, L. A. / De Bruijn, C. C. / Fledderus, H. / Stuik, R. / SPIE et al. | 1998
- 90
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Demonstration of a foil trap technique to eliminate laser plasma atomic debris and small particulatesShmaenok, L. A. / de Bruijn, C. C. / Fledderus, H. F. / Stuik, R. / Schmidt, Alexander A. / Simanovski, Dmitrii M. / Sorokin, Anatoley V. / Andreeva, T. A. / Bijkerk, Fred et al. | 1998
- 96
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Minimizing mapping-induced OPD errors when testing aspheric mirrorsHudyma, Russell M. / Sommargren, Gary E. et al. | 1998
- 96
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Minimizing mapping-induced OPD errors when testing aspheric mirrors [3331-11]Hudyma, R. M. / Sommargren, G. E. / SPIE et al. | 1998
- 102
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Rigorous method for compensation selection and alignment of microlithographic optical systems [3331-12]Chapman, H. N. / Sweeney, D. W. / SPIE et al. | 1998
- 102
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Rigorous method for compensation selection and alignment of microlithographic optical systemsChapman, Henry N. / Sweeney, Donald W. et al. | 1998
- 114
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Characterization of the accuracy of EUV phase-shifting point diffraction interferometryNaulleau, Patrick P. / Goldberg, Kenneth A. / Lee, Sang Hun / Chang, Chang-Hasnain C. / Bresloff, Cynthia J. / Batson, Phillip J. / Attwood, David T. / Bokor, Jeffrey et al. | 1998
- 114
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114 Characterization of the accuracy of EUV phase-shifting point diffraction interferometry [3331-13]Naulleau, P. / Goldberg, K. A. / Lee, S. H. / Chang, C. / SPIE et al. | 1998
- 124
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Impact of thermal and structural effects on EUV lithographic performance [3331-14]Ray-Chaudhuri, A. K. / Gianoulakis, S. E. / Spence, P. A. / Kanouff, M. P. / SPIE et al. | 1998
- 124
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Impact of thermal and structural effects on EUV lithographic performanceRay-Chaudhuri, Avijit K. / Gianoulakis, Steven E. / Spence, Paul A. / Kanouff, Michael P. / Moen, Christopher D. et al. | 1998
- 133
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Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme-ultraviolet lithographyMirkarimi, Paul B. / Montcalm, Claude et al. | 1998
- 133
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Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme-ultraviolet lithography [3331-15]Mirkarimi, P. B. / Montcalm, C. / SPIE et al. | 1998
- 150
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X ray fills the gap [3331-16]Wasik, C. / Murphy, G. P. / Chen, A. C. / Krasnoperova, A. A. / SPIE et al. | 1998
- 150
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X ray fills the gapWasik, Chet / Murphy, G. P. / Chen, Alek C. / Krasnoperova, Azalia A. / Flamholz, Alex L. / DeMay, Daniel J. / Leavey, Jeffrey A. / Loh, Steve / Chaloux, Sue / Thomas, Alan C. et al. | 1998
- 157
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Analysis and identification of factors contributing to the overlay budgetSimon, Klaus / Macklin, R. / Selzer, Robert A. / Vladimirsky, Olga / Vladimirsky, Yuli / Cerrina, Franco et al. | 1998
- 157
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Analysis and identification of factors contributing to the overlay budget [3331-17]Simon, K. / Macklin, R. / Seizer, R. A. / Vladimirsky, O. / SPIE et al. | 1998
- 165
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ACLV control in x-ray lithographyKrasnoperova, Azalia A. / Rippstein, Robert P. / Puisto, Denise M. / Rocque, Janet M. et al. | 1998
- 165
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ACLV control in x-ray lithography [3331-18]Krasnoperova, A. A. / Rippstein, R. P. / Puisto, D. M. / Rocque, J. M. / SPIE et al. | 1998
- 179
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Mask and wafer inspection and cleaning for proximity x-ray lithography [3331-20]Leavey, J. A. / Mangat, P. J. S. / SPIE et al. | 1998
- 179
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Mask and wafer inspection and cleaning for proximity x-ray lithographyLeavey, Jeffrey A. / Mangat, Pawitter J. S. et al. | 1998
- 190
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National technology roadmap for semiconductors: an analysis and perspective [3331-21]Rizvi, S. A. / SPIE et al. | 1998
- 190
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National technology roadmap for semiconductors: an analysis and perspectiveRizvi, Syed A. et al. | 1998
- 197
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Large-area high-throughput high-resolution lithography systems for flat-panel displays and microelectronic modules (Invited Paper) [3331-22]Jain, K. / Dunn, T. J. / Farmiga, N. / Zemel, M. / SPIE et al. | 1998
- 197
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Large-area high-throughput high-resolution lithography systems for flat-panel displays and microelectronic modulesJain, Kanti / Dunn, Thomas J. / Farmiga, Nestor / Zemel, Mark / Weisbecker, Carl et al. | 1998
- 207
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Lithography on flexible substrates: a roll-to-roll high-throughput high-resolution system for low-cost production of microelectronics [3331-23]Jain, K. / Dunn, T. J. / Farmiga, N. / Zemel, M. / SPIE et al. | 1998
- 207
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Lithography on flexible substrates: a roll-to-roll high-throughput high-resolution system for low-cost production of microelectronicsJain, Kanti / Dunn, Thomas J. / Farmiga, Nestor / Zemel, Mark / Weisbecker, Carl / Lee, Teik-Meng et al. | 1998
- 214
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Imaging interferometric lithography for arbitrary patterns [3331-75]Chen, X. / Brueck, S. R. J. / SPIE et al. | 1998
- 214
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Imaging interferometric lithography for arbitrary patternsChen, Xiaolan / Brueck, Steven R. J. et al. | 1998
- 226
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Mask requirements for advanced lithographyTrybula, Walter J. / Engelstad, Roxann L. et al. | 1998
- 226
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Mask requirements for advanced lithography [3331-25]Trybula, W. J. / Engelstad, R. L. / SPIE et al. | 1998
- 236
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Pattern generation requirements for mask making beyond 130 nm [3331-27]Abboud, F. E. / Gesley, M. A. / Maldonado, J. R. / SPIE et al. | 1998
- 236
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Pattern generation requirements for mask making beyond 130 nmAbboud, Frank E. / Gesley, Mark A. / Maldonado, Juan R. et al. | 1998
- 245
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Pellicles for x-ray lithography masksMaldonado, Juan R. / Cordes, Steven A. / Leavey, Jeffrey A. / Acosta, Raul E. / Doany, Fuad / Angelopoulos, Marie / Waskiewicz, C. et al. | 1998
- 245
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Pellicles for x-ray lithography masks [3331-64]Maldonado, J. R. / Cordes, S. A. / Leavey, J. A. / Acosta, R. E. / SPIE et al. | 1998
- 255
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Characterization of oxynitride hard mask removal processes for refractory x-ray mask fabrication [3331-28]Brooks, C. J. / Benoit, D. E. / Racette, K. C. / Puisto, D. M. / SPIE et al. | 1998
- 255
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Characterization of oxynitride hard mask removal processes for refractory x-ray mask fabricationBrooks, Cameron J. / Benoit, Douglas E. / Racette, Kenneth C. / Puisto, Denise M. / Whig, Renu / Dauksher, William J. / Cummings, Kevin D. et al. | 1998
- 261
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Transient thermal distortions of x-ray mask membranes during exposure scanningFeng, Zhaohua / Engelstad, Roxann L. / Lovell, Edward G. / Cerrina, Franco et al. | 1998
- 261
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Transient thermal distortions of x-ray mask membranes during exposure scanning [3331-29]Feng, Z. / Engelstad, R. L. / Lovell, E. G. / Cerrina, F. / SPIE et al. | 1998
- 275
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Photomask in-plane distortion induced during e-beam patterning [3331-30]Shamoun, B. / Sprague, M. A. / Engelstad, R. L. / Cerrina, F. / SPIE et al. | 1998
- 275
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Photomask in-plane distortion induced during e-beam patterningShamoun, Bassam / Sprague, Michael A. / Engelstad, Roxann L. / Cerrina, Franco et al. | 1998
- 280
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Mixed-proximity holographic mask technology for 50-nm VLSI by x-ray lithographyBurge, Ronald E. / Knauer, Joachim N. / Yuan, XiaoCong / Powell, Keith et al. | 1998
- 280
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Mixed-proximity holographic mask technology for 50-nm VLSI by x-ray lithography [3331-31]Burge, R. E. / Knauer, J. N. / Yuan, X.-C. / Powell, K. / SPIE et al. | 1998
- 292
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Performance limitations from Coulomb interaction in maskless parallel electron-beam lithography systemsHan, Liqun / McCord, Mark A. / Winograd, Gil I. / Pease, Roger Fabian W. et al. | 1998
- 292
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Performance limitations from Coulomb interaction in maskless parallel electron-beam lithography systems [3331-32]Han, L. / McCord, M. A. / Winograd, G. I. / Pease, R. F. W. / SPIE et al. | 1998
- 302
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Critical dimension and write time performance: a next-generation vector electron-beam mask patterning systemRose, Carl M. / Wang, Lawrence C. / Ferreira, Manny et al. | 1998
- 302
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Critical dimension and write time performance: a next-generation vector electron-beam mask patterning system [3331-33]Rose, C. / Wang, L. / Justen, J. / Ferreira, M. / SPIE et al. | 1998
- 313
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Development of a next-generation e-beam lithography system for 1-Gb DRAM masksKomagata, Tadashi / Nakagawa, Yasutoshi / Takemura, Hitoshi / Gotoh, Nobuo / Tanaka, Kazumitsu et al. | 1998
- 313
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Development of a next-generation e-beam lithography system for 1-Gb DRAM masks, [3331-34]Komagata, T. / Nakagawa, Y. / Takemura, H. / Gotoh, N. / SPIE et al. | 1998
- 326
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Electron-beam direct writing technology for fine gate patterningSato, Kazuhiko / Shirai, Seiichiro / Hayakawa, Hajime / Okazaki, Shinji et al. | 1998
- 326
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Electron-beam direct writing technology for fine gate patterning [3331-35]Sato, K. / Shirai, S. / Hayakawa, H. / Okazaki, S. / SPIE et al. | 1998
- 334
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Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writingNagata, Takeo / Manabe, Yasuo / Nara, Yasuo / Sasaki, Nobuo / Machida, Yasuhide et al. | 1998
- 334
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Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing [3331-36]Nagata, T. / Manabe, Y. / Nara, Y. / Sasaki, N. / SPIE et al. | 1998
- 342
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Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopyUrisu, Tsuneo et al. | 1998
- 342
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Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopy [3331-38]Urisu, T. / SPIE et al. | 1998
- 349
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New family of non-chemically amplified resistsAviram, Ari / Angelopoulos, Marie / Babich, Edward D. / Babich, Inna V. / Petrillo, Karen E. / Seeger, David E. et al. | 1998
- 349
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New family of non-chemically amplified resists [3331-39]Aviram, A. / Angelopoulos, M. / Babich, E. D. / Babich, I. V. / SPIE et al. | 1998
- 359
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Development of SiO2/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctionsGorwadkar, Sucheta / Wada, Toshimi / Shirakashi, Jun-ichi / Hiroshima, Hiroshi / Ishii, Kenichi / Komuro, Masanori et al. | 1998
- 359
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Development of SiO~2/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctions [3331-40]Gorwadkar, S. / Wada, T. / Shirakashi, J. / Hiroshima, H. / SPIE et al. | 1998
- 369
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Conducting electron-beam resists based on polyanilineHupcey, Maggie A. Z. / Angelopoulos, Marie / Gelorme, Jeffrey D. / Ober, Christopher K. et al. | 1998
- 369
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Conducting electron-beam resists based on polyaniline [3331-41]Hupcey, M. A. Z. / Angelopoulos, M. / Gelorme, J. D. / Ober, C. K. / SPIE et al. | 1998
- 375
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100-nm CMOS gates patterned with 3 sigma below 10 nmLiu, Hua-Yu / Diaz, Carlos H. / Chi, Chiu / Kavari, R. / Cheng, Peng / Cao, Min / Gleason, Robert E. / Doyle, Brian S. / Greene, Wayne M. / Ray, G. et al. | 1998
- 375
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100-nm CMOS gates patterned with 3 below 10 nm [3331-42]Liu, H. Y. / Diaz, C. H. / Chi, C. / Kavari, R. / SPIE et al. | 1998
- 382
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Application of fullerene C~6~0 thin films as an electron-beam resist for micro- and nanolithography [3331-43]Gaevski, M. E. / Rotkina, L. G. / Makarova, T. L. / Lunev, A. V. / SPIE et al. | 1998
- 382
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Application of fullerene C60thin films as an electron-beam resist for micro- and nanolithographyGaevski, Michael E. / Rotkina, Lolita G. / Makarova, Tatjana L. / Lunev, Alexander V. / Soshnikov, Ilja P. et al. | 1998
- 388
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Modeling study of image formation with point sources [3331-19]Bollepalli, B. S. / Khan, M. / Cerrina, F. / SPIE et al. | 1998
- 388
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Modeling study of image formation with point sourcesBollepalli, Srinivas B. / Khan, Mumit / Cerrina, Franco et al. | 1998
- 400
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Control of defects in EUV multilayers and demonstration of at-wavelength defect characterization by EUV microscopyLouis, Eric / den Hartog, Mark J. H. / Maas, Edward L. G. / Bijkerk, Fred et al. | 1998
- 400
-
Control of defects in EUV multilayers and demonstration of at-wavelength defect characterization by EUV microscopy [3331-09]Louis, E. / Den Hartog, M. J. H. / Maas, E. L. G. / Bijkerk, F. / SPIE et al. | 1998
- 406
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Mix-and-match interferometric and optical lithographies for nanoscale structures [3331-24]Zaidi, S. H. / Brueck, S. R. J. / Hill, T. A. / Shagam, R. N. / SPIE et al. | 1998
- 406
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Mix-and-match interferometric and optical lithographies for nanoscale structuresZaidi, Saleem H. / Brueck, Steven R. J. / Hill, Thomas A. / Shagam, Richard N. et al. | 1998
- 414
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Determining photoresist coat sensitivities of 300-mm wafersCrowell, Robert M. et al. | 1998
- 414
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Determining photoresist coat sensitivities of 300-mm wafers [3331-44]Crowell, R. M. / SPIE et al. | 1998
- 420
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TEMP: a software package for simulation of resist heating in electron-beam lithographyCui, Zheng et al. | 1998
- 420
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TEMP: a software package for simulation of resist heating in electron-beam lithography [3331-45]Cui, Z. / SPIE et al. | 1998
- 431
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Electron-beam lithography on multilayer substrates: experimental and theoretical studyRaptis, Ioannis / Meneghini, Giancarlo / Rosenbusch, Anja / Glezos, Nikos / Palumbo, Rafaelle / Ardito, Marco / Scopa, Leonardo / Patsis, George P. / Valamontes, Evangelos / Argitis, Panagiotis et al. | 1998
- 431
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Electron-beam lithography on multilayer substrates: experimental and theoretical study [3331-47]Raptis, I. / Meneghini, G. / Rosenbusch, A. / Glezos, N. / SPIE et al. | 1998
- 442
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Linewidth controllability depending on electron-beam blur and resist thicknessItoh, Masamitsu / Ando, Atsushi / Magoshi, Shunko / Hattori, Kiyoshi et al. | 1998
- 442
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Linewidth controllability depending on electron-beam blur and resist thickness [3331-48]Itoh, M. / Ando, A. / Magoshi, S. / Hattori, K. / SPIE et al. | 1998
- 450
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Compact recycled beam source for XRL and EUVL exposure tools [3331-49]Piestrup, M. A. / Powell, M. W. / Cremer, J. T. / Lombardo, L. W. / SPIE et al. | 1998
- 450
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Compact recycled beam source for XRL and EUVL exposure toolsPiestrup, Melvin A. / Powell, Michael W. / Cremer, J. Theodore / Lombardo, Louis W. / Kaplin, V. V. / Mihal'chuk, A. A. / Uglov, S. R. / Zabaev, V. N. / Skopik, D. M. / Silzer, R. M. et al. | 1998
- 464
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Optimization of pattern shape in electron-beam cell projection lithographyEma, Takahiro / Yamashita, Hiroshi / Nakajima, Ken / Kobinata, Hideo / Nozue, Hiroshi et al. | 1998
- 464
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Optimization of pattern shape in electron-beam cell projection lithography [3331-50]Ema, T. / Yamashita, H. / Nakajima, K. / Kobinata, H. / SPIE et al. | 1998
- 471
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Highly accurate stitching method between cell projection and variably shaped e-beam shotsKojima, Yoshikatsu / Onoda, Naka / Tokunaga, Kenichi / Nakajima, Ken / Nozue, Hiroshi et al. | 1998
- 471
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Highly accurate stitching method between cell projection and variably shaped e-beam shots [3331-51]Kojima, Y. / Onoda, N. / Tokunaga, K. / Nakajima, K. / SPIE et al. | 1998
- 478
-
Application of development-free vapor photolithography in etching silicon nitrideHong, Xiaoyin / Duan, Shengquan / Lu, Jianping / Wang, Peiqing / Chen, Yongqi et al. | 1998
- 478
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Application of development-free vapor photolithography in etching silicon nitride [3331-52]Hong, X. / Duan, S. / Lu, J. / Wang, P. / SPIE et al. | 1998
- 487
-
UVIII-positive chemically amplified resist optimization [3331-53]Rocque, J. M. / Brooks, C. J. / Henry, R. W. / Benoit, D. E. / SPIE et al. | 1998
- 487
-
UVIII-positive chemically amplified resist optimizationRocque, Janet M. / Brooks, Cameron J. / Henry, Richard W. / Benoit, Douglas E. / Mangat, Pawitter J. S. et al. | 1998
- 496
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Interferometric lithography pattern delimited by a mask imageChen, Xiaolan / Frauenglass, Andrew / Brueck, Steven R. J. et al. | 1998
- 496
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Interferometric lithography pattern delimited by a mask image [3331-55]Chen, X. / Frauenglass, A. / Brueck, S. R. J. / SPIE et al. | 1998
- 503
-
Koehler-illumination-based method to improve beam size controllability [3331-57]Hattori, K. / Sunaoshi, H. / Ando, A. / SPIE et al. | 1998
- 503
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Koehler-illumination-based method to improve beam size controllabilityHattori, Kiyoshi / Sunaoshi, Hitoshi / Ando, Atsushi et al. | 1998
- 511
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Novel x-ray mask structure with low out-of-plane distortion [3331-59]Jeon, Y. J. / Choi, S.-S. / Kim, I. Y. / Chung, H. B. / SPIE et al. | 1998
- 511
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Novel x-ray mask structure with low out-of-plane distortionJeon, Young Jin / Choi, Sang-Soo / Kim, Il Yong / Chung, Hai Bin / Kim, Bo Woo et al. | 1998
- 518
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400- and 750-MHz one- and two-dimensional nuclear magnetic resonance spectra of x-ray-degraded poly(methyl methacrylate): comparison with UV-degraded material [3331-60]Waali, E. E. / Scott, J. D. / Vladimirsky, O. / Vladimirsky, Y. / SPIE et al. | 1998
- 518
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400- and 750-MHz one- and two-dimensional nuclear magnetic resonance spectra of x-ray-degraded poly(methyl methacrylate): comparison with UV-degraded materialWaali, Edward E. / Scott, John D. / Vladimirsky, Olga / Vladimirsky, Yuli / Hayataka, K. M. / Klopf, J. Michael et al. | 1998
- 525
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Surface chemistry of GaAs wafers and reaction with chemically amplified resists during resist processingLu, Bing / Vladimirsky, Olga / Taylor, James W. / Dandekar, Niru V. et al. | 1998
- 525
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Surface chemistry of GaAs wafers and reaction with chemically amplified resists during resist processing [3331-63]Lu, B. / Vladimirsky, O. / Taylor, J. W. / Dandekar, N. V. / SPIE et al. | 1998
- 531
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Shot-noise impact on resist roughness in EUV lithographyHutchinson, John M. et al. | 1998
- 531
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Shot-noise impact on resist roughness in EUV lithography [3331-65]Hutchinson, J. M. / SPIE et al. | 1998
- 537
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Scattering and coherence in EUVLMilster, Tomas D. / Beaudry, Neil A. et al. | 1998
- 537
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Scattering and coherence in EUVL [3331-66]Milster, T. D. / Beaudry, N. A. / SPIE et al. | 1998
- 544
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Materials for reflective multilayer coatings for EUV wavelengths [3331-67]Smith, B. W. / Venkataraman, P. / Kurinec, S. K. / Mackay, R. S. / SPIE et al. | 1998
- 544
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Materials for reflective multilayer coatings for EUV wavelengthsSmith, Bruce W. / Venkataraman, Parthasarathy / Kurinec, Santosh K. / Mackay, R. S. et al. | 1998
- 555
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X-ray exposures of electrodeposited photoresist for conformal lithography on corrugated surfacesHartley, Frank T. / Khan Malek, Chantal G. / Nguyen, Steven et al. | 1998
- 555
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X-ray exposures of electrodeposited photoresist for conformal lithography on corrugated surfaces [3331-68]Hartley, F. T. / Khan Malek, C. / Nguyen, S. / SPIE et al. | 1998
- 559
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Pattern-specific emulation (PSE) for ion-beam projection lithography masks using finite element analysis [3331-69]Fisher, A. H. / Engelstad, R. L. / Lovell, E. G. / SPIE et al. | 1998
- 559
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Pattern-specific emulation (PSE) for ion-beam projection lithography masks using finite element analysisFisher, Adam H. / Engelstad, Roxann L. / Lovell, Edward G. et al. | 1998
- 568
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Photoacid generator study for chemically amplified negative resists for high-resolution lithography [3331-70]Dentinger, P. M. / Knapp, K. G. / Reynolds, G. W. / Taylor, J. W. / SPIE et al. | 1998
- 568
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Photoacid generator study for chemically amplified negative resists for high-resolution lithographyDentinger, Paul M. / Knapp, Kurtis G. / Reynolds, Geoffrey W. / Taylor, James W. / Fedynyshyn, Theodore H. / Richardson, Todd A. et al. | 1998
- 580
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Fabrication and testing of optics for EUV projection lithographyTaylor, John S. / Sommargren, Gary E. / Sweeney, Donald W. / Hudyma, Russell M. et al. | 1998
- 580
-
Fabrication and testing of optics for EUV projection lithography [3331-72]Taylor, J. S. / Sommargren, G. E. / Sweeney, D. W. / Hudyma, R. M. / SPIE et al. | 1998
- 591
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0.1-μm high-aspect-ratio pattern replication and linewidth controlChen, Zheng / Vladimirsky, Yuli / Cerrina, Franco / Lai, Barry P. / Yun, Wenbing / Gluskin, Efim S. et al. | 1998
- 591
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0.1-m high-aspect-ratio pattern replication and linewidth control [3331-73]Chen, Z. / Vladimirsky, Y. / Cerrina, F. / Lai, B. P. / SPIE et al. | 1998
- 601
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Mechanical distortions in advanced optical reticlesMikkelson, Andrew R. / Sprague, Michael A. / Engelstad, Roxann L. / Lovell, Edward G. / Trost, David et al. | 1998
- 601
-
Mechanical distortions in advanced optical reticles [3331-77]Mikkelson, A. R. / Sprague, M. A. / Engelstad, R. L. / Lovell, E. G. / SPIE et al. | 1998
- 612
-
Equivalent modeling of SCALPEL mask membrane distortions [3331-78]Dicks, G. A. / Engelstad, R. L. / Lovell, E. G. / Liddle, J. A. / SPIE et al. | 1998
- 612
-
Equivalent modeling of SCALPEL mask membrane distortionsDicks, Gerald A. / Engelstad, Roxann L. / Lovell, Edward G. / Liddle, James A. et al. | 1998
- 621
-
Analysis, design, and optimization of ion-beam lithography masksTejeda, Richard O. / Engelstad, Roxann L. / Lovell, Edward G. / Berry, Ivan L. et al. | 1998
- 621
-
Analysis, design, and optimization of ion-beam lithography masks [3331-79]Tejeda, R. O. / Engelstad, R. L. / Lovell, E. G. / Berry, I. L. / SPIE et al. | 1998
- 629
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Dynamic characterization of step-induced vibrations of x-ray mask membranesSchlax, Michael P. / Engelstad, Roxann L. / Lovell, Edward G. et al. | 1998
- 629
-
Dynamic characterization of step-induced vibrations of x-ray mask membranes [3331-80]Schlax, M. P. / Engelstad, R. L. / Lovell, E. G. / SPIE et al. | 1998
- 638
-
EUV mask absorber defect size requirement at 100-nm design rules [3331-81]Yan, P. / Zhang, G. / Chow, J. / Kofron, P. / SPIE et al. | 1998
- 638
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EUV mask absorber defect size requirement at 100-nm design rulesYan, Pei-yang / Zhang, Guojing / Chow, Jenn / Kofron, Patrick / Langston, Joseph C. / Solak, Harun H. / Kearney, Patrick A. / Cardinale, Gregory F. / Berger, Kurt W. / Henderson, Craig C. et al. | 1998
- 646
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Extension of the traditional optical model for investigation into EUV projection lithography capabilities [3331-82]Ivin, V. V. / Lucas, K. D. / Makhviladze, T. M. / Manuilov, V. V. / SPIE et al. | 1998
- 646
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Extension of the traditional optical model for investigation into EUV projection lithography capabilitiesIvin, Vladimir V. / Lucas, Kevin D. / Makhviladze, Tariel M. / Manuylov, Vadim V. / Medvedeva, Marina G. et al. | 1998
- 655
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Comparative study of resist heating and proximity effect influence on CD variation in 30-kV EBLBabin, Sergey V. / Hudek, Peter / Kostic, Ivan / Kuzmin, Igor Y. et al. | 1998
- 655
-
Comparative study of resist heating and proximity effect influence on CD variation in 30-kV EBL [3331-83]Babin, S. V. / Hudek, P. / Kostic, I. / Kuzmin, I. Y. / SPIE et al. | 1998
- 662
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Scaling behavior in interference lithographyAgayan, Rodney R. / Banyai, William C. / Fernandez, Andres J. et al. | 1998
- 662
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Scaling behavior in interference lithography [3331-84]Agayan, R. R. / Banyai, W. C. / Fernandez, A. J. / SPIE et al. | 1998
- 673
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Critical issues for developing a high-throughput SCALPEL system for sub-0.18-m lithography generations [3331-85]Stanton, S. T. / Liddle, J. A. / Waskiewicz, W. K. / Mkrtchyan, M. M. / SPIE et al. | 1998
- 673
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Critical issues for developing a high-throughput SCALPEL system for sub-0.18-um lithography generationsStanton, Stuart T. / Liddle, James A. / Waskiewicz, Warren K. / Mkrtchyan, Masis M. / Novembre, Anthony E. / Harriott, Lloyd R. et al. | 1998
- 689
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X-ray stepper development for volume production at CanonUda, Kouji / Mizusawa, Nobutoshi / Tanaka, Yutaka / Watanabe, Yutaka / Ina, Hideki / Uzawa, Shunichi et al. | 1998
- 689
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X-ray stepper development for volume production at Canon [3331-86]Uda, K. / Mizusawa, N. / Tanaka, Y. / Watanabe, Y. / SPIE et al. | 1998