Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach x (Englisch)
- Neue Suche nach: Trouiller, Yorick
- Neue Suche nach: Belledent, Jerome
- Neue Suche nach: Chapon, J. D.
- Neue Suche nach: Rousset, V.
- Neue Suche nach: Rody, Yves F.
- Neue Suche nach: Manakli, Serdar
- Neue Suche nach: Goirand, Pierre-Jerome
- Neue Suche nach: Trouiller, Yorick
- Neue Suche nach: Belledent, Jerome
- Neue Suche nach: Chapon, J. D.
- Neue Suche nach: Rousset, V.
- Neue Suche nach: Rody, Yves F.
- Neue Suche nach: Manakli, Serdar
- Neue Suche nach: Goirand, Pierre-Jerome
In:
Proc. SPIE
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5040
; 1231
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2003
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach x
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Beteiligte:Trouiller, Yorick ( Autor:in ) / Belledent, Jerome ( Autor:in ) / Chapon, J. D. ( Autor:in ) / Rousset, V. ( Autor:in ) / Rody, Yves F. ( Autor:in ) / Manakli, Serdar ( Autor:in ) / Goirand, Pierre-Jerome ( Autor:in )
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Kongress:Optical Microlithography XVI ; 2003 ; Santa Clara,California,United States
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Erschienen in:Proc. SPIE ; 5040 ; 1231
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:26.06.2003
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Experimental determination of lens aberrations from the intensity point-spread function in the focal regionDirksen, Peter / Braat, Joseph J. M. / Janssen, Augustus J. E. M. / Juffermans, Casper A. H. / Leeuwestein, Ad et al. | 2003
- 1
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Experimental determination of lens aberrations from the intensity point-spread function in the focal region [5040-01]Dirksen, P. / Braat, J. J. M. / Janssen, A. J. E. M. / Juffermans, C. A. H. / Leeuwestein, A. / SPIE et al. | 2003
- 11
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Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection-lens aberrations: an initial studyDe Bisschop, Peter et al. | 2003
- 11
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Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection lens aberrations: an initial study [5040-02]De Bisschop, P. / SPIE et al. | 2003
- 24
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Size-dependent flare and its effect on imagingRenwick, Stephen P. / Slonaker, Steve D. / Ogata, Taro et al. | 2003
- 24
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Size-dependent flare and its effect on imaging [5040-03]Renwick, S. P. / Slonaker, S. D. / Ogata, T. / SPIE et al. | 2003
- 33
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Impact of across-pupil transmittance variation in projection lenses on fine device pattern imagingSato, Kazuya / Mimotogi, Shoji / Inoue, Soichi / Higashiki, Tatsuhiko et al. | 2003
- 33
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Impact of across-pupil transmittance variation in projection lenses on fine device pattern imaging [5040-04]Sato, K. / Mimotogi, S. / Inoue, S. / Higashiki, T. / SPIE et al. | 2003
- 45
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Illumination pupil fill measurement and analysis and its application in scanner V-H bias characterization for 130-nm node and beyond [5040-05]Zhang, G. / Wang, C. / Tan, C. L. / Ilzhoefer, J. R. / Atkinson, C. / Renwick, S. P. / Slonaker, S. D. / Godfrey, D. / Fruga, C. H. / SPIE et al. | 2003
- 45
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Illumination pupil fill measurement and analysis and its application in scanner V-H bias characterization for 130-nm node and beyondZhang, Gary / Wang, Changan / Tan, Colin L. / Ilzhoefer, John R. / Atkinson, Chris / Renwick, Stephen P. / Slonaker, Steve D. / Godfrey, David / Fruga, Catherine H. et al. | 2003
- 57
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Methods for benchmarking photolithography simulators [5040-06]Smith, M. D. / Mack, C. A. / SPIE et al. | 2003
- 57
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Methods for benchmarking photolithography simulatorsSmith, Mark D. / Mack, Chris A. et al. | 2003
- 69
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Fast and rigorous three-dimensional mask diffraction simulation using Battle-Lemarie wavelet-based multiresolution time-domain method [5040-07]Yeung, M. S. / SPIE et al. | 2003
- 69
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Fast and rigorous three-dimensional mask diffraction simulation using Battle-Lemarie wavelet-based multiresolution time-domain methodYeung, Michael S. et al. | 2003
- 78
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Improved modeling performance with an adapted vectorial formulation of the Hopkins imaging equation [5040-08]Adam, K. / Granik, Y. / Torres, A. / Cobb, N. B. / SPIE et al. | 2003
- 78
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Improved modeling performance with an adapted vectorial formulation of the Hopkins imaging equationAdam, Konstantinos / Granik, Yuri / Torres, Andres / Cobb, Nicolas B. et al. | 2003
- 92
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Fast topography simulation using differential methodZinn, Sonny Y. / Kim, Sung-Hyuck / Choi, Sung-Woon / Sohn, Jung-Min et al. | 2003
- 92
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Fast topography simulation using differential method [5040-09]Zinn, S. Y. / Kim, S.-H. / Choi, S.-W. / Sohn, J.-M. / SPIE et al. | 2003
- 101
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Rigorous simulation of exposure over nonplanar wafers [5040-10]Erdmann, A. / Kalus, C. K. / Schmoller, T. / Klyonova, Y. / Sato, T. / Endo, A. / Shibata, T. / Kobayashi, Y. / SPIE et al. | 2003
- 101
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Rigorous simulation of exposure over nonplanar wafersErdmann, Andreas / Kalus, Christian K. / Schmoeller, Thomas / Klyonova, Yewgenija / Sato, Takashi / Endo, Ayako / Shibata, Tsuyoshi / Kobayashi, Yuuji et al. | 2003
- 112
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Sensitivity of rinse, dry, and etch parameters [5040-11]Kim, S.-K. / SPIE et al. | 2003
- 112
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Sensitivity of rinse, dry, and etch parametersKim, Sang-Kon et al. | 2003
- 119
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Impact of wavefront errors on low k~1 processes at extremely high NA [5040-12]Graupner, P. / Garreis, R. B. / Gohnermeier, A. / Heil, T. / Lowisch, M. / Flagello, D. G. / SPIE et al. | 2003
- 119
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Impact of wavefront errors on low k1 processes at extremely high NAGraeupner, Paul / Garreis, Reiner B. / Goehnermeier, Aksel / Heil, Tilmann / Lowisch, Martin / Flagello, Donis G. et al. | 2003
- 131
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Analysis of imaging performance degradation [5040-13]Matsumoto, K. / Matsuyama, T. / Hirukawa, S. / SPIE et al. | 2003
- 131
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Analysis of imaging performance degradationMatsumoto, Koichi / Matsuyama, Tomoyuki / Hirukawa, Shigeru et al. | 2003
- 139
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Optimizing and enhancing optical systems to meet the low k~1 challenge [5040-14]Flagello, D. G. / Socha, R. J. / Shi, X. / van Schoot, J. B. / Baselmans, J. / van de Kerkhof, M. A. / de Boeij, W. / Engelen, A. / Carpaij, R. / Noordman, O. et al. | 2003
- 139
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Optimizing and enhancing optical systems to meet the low k1challengeFlagello, Donis G. / Socha, Robert J. / Shi, Xuelong / van Schoot, Jan B. / Baselmans, Jan / van de Kerkhof, Mark A. / de Boeij, Wim / Engelen, Andre / Carpaij, Rene / Noordman, Oscar et al. | 2003
- 151
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Measuring and modeling flare in optical lithography [5040-15]Mack, C. A. / SPIE et al. | 2003
- 151
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Measuring and modeling flare in optical lithographyMack, Chris A. et al. | 2003
- 162
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Characterizing illumination angular uniformity with phase-shifting masksMcIntyre, Gregory / Neureuther, Andrew R. et al. | 2003
- 162
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Characterizing illumination angular uniformity with phase-shifting masks [5040-16]McIntyre, G. / Neureuther, A. R. / SPIE et al. | 2003
- 171
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Critical evaluation of photomask needs for competing 65-nm node RET optionsProgler, Christopher J. / Xiao, Guangming et al. | 2003
- 171
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Critical evaluation of photomask needs for competing 65-nm node RET options [5040-17]Progler, C. J. / Xiao, G. / SPIE et al. | 2003
- 182
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Strategies for predictive control of chrome stress-induced registration errorsWei, Alexander C. / Hughes, Gregory P. / Chalekian, Aaron J. / Mackey, Lawrence N. / Mikkelson, Andrew R. / Engelstad, Roxann L. et al. | 2003
- 182
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Strategies for predictive control of chrome stress-induced registration errors [5040-103]Wei, A. C. / Hughes, G. P. / Chalekian, A. J. / Mackey, L. N. / Mikkelson, A. R. / Engelstad, R. L. / SPIE et al. | 2003
- 193
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MEF revisited: low k1effects versus mask topography effectsPierrat, Christophe / Wong, Alfred K. K. et al. | 2003
- 193
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The MEF revisited: low k~1 effects versus mask topography effects [5040-19]Pierrat, C. / Wong, A. K. K. / SPIE et al. | 2003
- 203
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Dark-field high-transmission chromeless lithography [5040-20]Bailey, G. E. / Callan, N. P. / Taravade, K. N. / Jensen, J. V. / Eynon, B. G. / Martin, P. M. / Kamberian, H. H. / Taylor, D. / Farnbach, R. S. / SPIE et al. | 2003
- 203
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Dark-field high-transmission chromeless lithographyBailey, George E. / Callan, Neal P. / Taravade, Kunal N. / Jensen, John V. / Eynon, Benjamin G. / Martin, Patrick M. / Kamberian, Henry H. / Taylor, Darren / Farnbach, Rick S. et al. | 2003
- 215
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65-nm full-chip implementation using double dipole lithography [5040-21]Hsu, S. D. / Chen, J. F. / Cororan, N. / Knose, W. T. / Van Den Broeke, D. J. / Laidig, T. L. / Wampler, K. E. / Shi, X. / Hsu, C. M. / Eurlings, M. et al. | 2003
- 215
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65-nm full-chip implementation using double dipole lithographyHsu, Stephen D. / Chen, J. Fung / Cororan, Noel / Knose, William T. / Van Den Broeke, Douglas J. / Laidig, Thomas L. / Wampler, Kurt E. / Shi, Xuelong / Hsu, Michael / Eurlings, Mark et al. | 2003
- 232
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Full-level alternating PSM for sub-100nm DRAM gate patterningPforr, Rainer / Ahrens, Marco / Dettmann, Wolfgang / Hennig, Mario / Koehle, Roderick / Ludwig, Burkhard / Morgana, Nicolo / Thiele, Joerg et al. | 2003
- 232
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Full-level alternating PSM for sub-100-nm DRAM gate patterning [5040-22]Pforr, R. / Ahrens, M. / Dettmann, W. / Hennig, M. / Koehle, R. / Ludwig, B. / Morgana, N. / Thiele, J. / SPIE et al. | 2003
- 244
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Layer-specific illumination optimization by Monte Carlo method [5040-23]Kim, H.-C. / Nam, D.-S. / Hwang, C. / Kang, Y. S. / Woo, S.-G. / Cho, H.-K. / Han, W.-S. / SPIE et al. | 2003
- 244
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Layer-specific illumination optimization by Monte Carlo methodKim, Ho-Chul / Nam, Dong-Seok / Hwang, Chan / Kang, Young S. / Woo, Sang-Gyun / Cho, Han-Ku / Han, Woo-Sung et al. | 2003
- 251
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Evaluation of ArF CLM in the sub-100-nm DRAM cellLee, Ju-Hyung / Chung, Dong-Hoon / Kim, Ho-Chul / Nam, Dong-Seok / Woo, Sang-Gyun / Cho, Han-Ku / Han, Woo-Sung et al. | 2003
- 251
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Evaluation of ArF CLM in the sub-100-nm DRAM cell [5040-24]Lee, J.-H. / Chung, D.-H. / Kim, H.-C. / Nam, D.-S. / Woo, S.-G. / Cho, H.-K. / Han, W.-S. / SPIE et al. | 2003
- 261
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157-nm lithography for 65-nm node SRAM-gateSuganaga, Toshifumi / Irie, Shigeo / Miyoshi, Seiro / Kim, Jae-Hwan / Watanabe, Kunio / Kurose, Eiji / Furukawa, Takamitsu / Hagiwara, Takuya / Ishimaru, Toshiyuki / Itani, Toshiro et al. | 2003
- 261
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157-nm lithography for 65-nm node SRAM-gate [5040-25]Suganaga, T. / Irie, S. / Miyoshi, S. / Kim, J.-H. / Watanabe, K. / Kurose, E. / Furukawa, T. / Hagiwara, T. / Ishimaru, T. / Itani, T. et al. | 2003
- 270
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ArF solutions for low-k1back-end imagingWiaux, Vincent / Montgomery, Patrick K. / Vandenberghe, Geert / Monnoyer, Philippe / Ronse, Kurt G. / Conley, Will / Litt, Lloyd C. / Lucas, Kevin / Finders, Jo / Socha, Robert et al. | 2003
- 270
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ArF solutions for low-k~1 back-end imaging [5040-26]Wiaux, V. / Montgomery, P. K. / Vandenberghe, G. / Monnoyer, P. / Ronse, K. G. / Conley, W. / Litt, L. C. / Lucas, K. / Finders, J. / Socha, R. et al. | 2003
- 282
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Full phase-shifting methodology for 65-nm node lithographyPierrat, Christophe / Driessen, Frank A. J. M. / Vandenberghe, Geert et al. | 2003
- 282
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Full phase-shifting methodology for 65-nm node lithography [5040-27]Pierrat, C. / Driessen, F. A. J. M. / Vandenberghe, G. / SPIE et al. | 2003
- 294
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Alternating phase-shift masks for contact patterningSchenker, Richard E. / Allen, Gary A. / Tejnil, Edita / Ogadhoh, Shem et al. | 2003
- 294
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Alternating phase-shift masks for contact patterning [5040-28]Schenker, R. E. / Allen, G. A. / Tejnil, E. / Ogadhoh, S. / SPIE et al. | 2003
- 303
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Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyondWu, Qiang / Halle, Scott / Bukofsky, Scott J. / Butt, Shahid A. / Hibbs, Michael S. et al. | 2003
- 303
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Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyond [5040-29]Wu, Q. / Halle, S. / Bukofsky, S. J. / Butt, S. A. / Hibbs, M. S. / SPIE et al. | 2003
- 313
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Impact of mask topography and resist effects on optical proximity correction in advanced alternating phase-shift processCheng, Mosong / Ho, Benjamin C. P. / Guenther, Doug E. et al. | 2003
- 313
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The impact of mask topography and resist effects on optical proximity correction in advanced alternating phase-shift process [5040-30]Cheng, M. / Ho, B. C. P. / Guenther, D. E. / SPIE et al. | 2003
- 327
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Limits of strong phase-shift patterning for device research [5040-31]Fritze, M. / Mallen, R. D. / Wheeler, B. / Yost, D. / Snyder, J. P. / Kasprowicz, B. S. / Eynon, B. G. / Liu, H.-Y. / SPIE et al. | 2003
- 327
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Limits of strong phase-shift patterning for device researchFritze, Michael / Mallen, Renee D. / Wheeler, Bruce / Yost, Donna / Snyder, John P. / Kasprowicz, Bryan S. / Eynon, Benjamin G. / Liu, Hua-Yu et al. | 2003
- 344
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Vortex via process: analysis and mask fabrication for contact CDs <80 nmLevenson, Marc D. / Tan, Sze M. / Dai, Grace / Morikawa, Yasutaka / Hayashi, Naoya / Ebihara, Takeaki et al. | 2003
- 371
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Application of in-situ aberration measurements to pattern-specific imaging optimizationSlonaker, Steve D. / Chung, Robert J. et al. | 2003
- 371
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Application of in-situ aberration measurements to pattern-specific imaging optimization [5040-33]Slonaker, S. D. / Chung, R. J. / SPIE et al. | 2003
- 383
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Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabrication [5040-34]Matsuo, T. / Misaka, A. / Sasago, M. / SPIE et al. | 2003
- 383
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Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabricationMatsuo, Takahiro / Misaka, Akio / Sasago, Masaru et al. | 2003
- 392
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Application of CPL reticle technology for the 65- and 50-nm nodeConley, Will / Van Den Broeke, Douglas J. / Socha, Robert J. / Wu, Wei / Litt, Lloyd C. / Lucas, Kevin / Nelson-Thomas, Carla M. / Roman, Bernard J. / Chen, J. Fung / Wampler, Kurt E. et al. | 2003
- 392
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Application of CPL reticle technology for the 65- and 50-nm node [5040-94]Conley, W. / Van Den Broeke, D. J. / Socha, R. J. / Wu, W. / Litt, L. C. / Lucas, K. / Nelson-Thomas, C. M. / Roman, B. J. / Chen, F. / Wampler, K. E. et al. | 2003
- 399
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Forbidden pitch or duty-free: revealing the causes of across-pitch imaging differences [5040-36]Smith, B. W. / SPIE et al. | 2003
- 399
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Forbidden pitch or duty-free: revealing the causes of across-pitch imaging differencesSmith, Bruce W. et al. | 2003
- 408
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Process, design and optical proximity correction requirements for the 65nm device generationLucas, Kevin / Montgomery, Patrick / Litt, Lloyd C. / Conley, Will / Postnikov, Sergei V. / Wu, Wei / Yuan, Chi-Min / Olivares, Marc / Strozewski, Kirk / Carter, Russell L. et al. | 2003
- 408
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Process, design, and optical proximity correction requirements for the 65-nm device generation [5040-37]Lucas, K. / Montgomery, P. / Litt, L. C. / Conley, W. / Postnikov, S. V. / Wu, W. / Yuan, C.-M. / Olivares, M. / Strozewski, K. / Carter, R. L. et al. | 2003
- 420
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Optical rule checking for proximity-corrected mask shapesMukherjee, Maharaj / Baum, Zachary / Nickel, John / Dunham, Timothy G. et al. | 2003
- 420
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Optical rule checking for proximity-corrected mask shapes [5040-38]Mukherjee, M. / Baum, Z. / Nickel, J. / Dunham, T. G. / SPIE et al. | 2003
- 431
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Failure prediction across process window for robust OPCShang, Shumay D. / Granik, Yuri / Cobb, Nicolas B. / Maurer, Wilhelm / Cui, Yuping / Liebmann, Lars W. / Oberschmidt, James M. / Singh, Rama N. / Vampatella, Ben R. et al. | 2003
- 431
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Failure prediction across process window for robust OPC [5040-39]Shang, S. D. / Granik, Y. / Cobb, N. B. / Maurer, W. / Cui, Y. / Liebmann, L. W. / Oberschmidt, J. M. / Singh, R. N. / Vampatella, B. R. / SPIE et al. | 2003
- 441
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A methodology to calculate line-end correction feature performance as a function of reticle cost [5040-40]Melvin, L. S. / Shiely, J. P. / Rieger, M. L. / Painter, B. / SPIE et al. | 2003
- 441
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A methodology to calculate line-end correction feature performance as a function of reticle costMelvin, Lawrence S. / Shiely, James P. / Rieger, Michael L. / Painter, Benjamin et al. | 2003
- 450
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Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-mum CMOS technology [5042-28]Lee, T.-K. / Wang, Y.-C. / Chi, M.-H. / Lu, C. Y. / Hsieh, C. H. / Liu, R. G. / Liao, H. J. / Yang, S. S. / Chang, C.-H. / SPIE et al. | 2003
- 457
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Trends in systematic nonparticle yield loss mechanisms and the implications for IC designBerglund, C. Neil et al. | 2003
- 457
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Trends in systematic nonparticle yield loss mechanisms and the implication for IC design [5040-41]Berglund, C. N. / SPIE et al. | 2003
- 466
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Rates and mechanisms of optic contamination in the EUV engineering test stand [5037-54]Grunow, P. A. / Klebanoff, L. E. / Graham, S. / Haney, S. J. / Clift, W. M. / SPIE et al. | 2003
- 477
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Relation between electron- and photon-caused oxidation in EUVL optics [5037-55]Malinowski, M. E. / Steinhaus, C. A. / Meeker, D. E. / Clift, W. M. / Klebanoff, L. E. / Bajt, S. / SPIE et al. | 2003
- 487
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Ambient effects on the laser durability of 157-nm optical coatings [5040-185]Liberman, V. / Rothschild, M. / Palmacci, S. T. / Efremow, N. N. / Sedlacek, J. H. C. / Grenville, A. / SPIE et al. | 2003
- 487
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Ambient effects on the laser durability of 157-nm optical coatingsLiberman, Vladimir / Rothschild, Mordechai / Palmacci, Stephen T. / Efremow, Nikolay N. / Sedlacek, Jan H. C. / Grenville, Andrew et al. | 2003
- 499
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New approach to measurement of photoactive deep UV optics contaminants at sub parts-per-trillion levels [5037-152]Atkinson, C. / Hanson, J. / Kishkovich, O. P. / Alexander, M. P. / Grayfer, A. / SPIE et al. | 2003
- 510
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Effects of radiation-induced carbon contamination on the performance of an EUV lithograpahic optic [5037-57]Barty, A. / Goldberg, K. A. / SPIE et al. | 2003
- 520
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Atomic hydrogen cleaning of EUV multilayer optics [5037-58]Graham, S. / Steinhaus, C. A. / Clift, W. M. / Klebanoff, L. E. / Bajt, S. / SPIE et al. | 2003
- 530
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ACLV-analysis in production and its impact on product performance [5040-42]Seltmann, R. / Stephan, R. / Mazur, M. / Spence, C. / La Fontaine, B. / Stankowski, D. / Poock, A. / Grundke, W. / SPIE et al. | 2003
- 530
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ACLV-analysis in production and its impact on product performanceSeltmann, Rolf / Stephan, Rolf / Mazur, Martin / Spence, Christopher / La Fontaine, Bruno / Stankowski, Dirk / Poock, Andre / Grundke, Wolfram et al. | 2003
- 541
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Scatterometer-based scanner fingerprinting technique (ScatterLith) and its applications in image field and ACLV analysis [5040-43]Wang, C. / Zhang, G. / DeMoor, S. J. / Boehm, M. A. / Littau, M. E. / Raymond, C. J. / SPIE et al. | 2003
- 541
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Scatterometer-based scanner fingerprinting technique(ScatterLith) and its applications in image field and ACLV analysisWang, Changan / Zhang, Gary / DeMoor, Stephen J. / Boehm, Mark A. / Littau, Michael E. / Raymond, Christopher J. et al. | 2003
- 553
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Improvement of shot uniformity on a wafer by controlling backside transmittance distribution of a photomask [5040-44]Park, J. R. / Kim, S. H. / Yeo, G.-S. / Choi, S.-W. / Ki, W.-T. / Yoon, H.-S. / Sohn, J.-M. / SPIE et al. | 2003
- 553
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Improvement of shot uniformity on a wafer by controlling backside transmittance distribution of a photomaskPark, Jong Rak / Kim, Soon Ho / Yeo, Gi-Sung / Choi, Sung-Woon / Ki, Won-Tai / Yoon, Hee-Sun / Sohn, Jung-Min et al. | 2003
- 561
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Flare-induced CD variation correction using transmittance-controlled mask [5040-45]Nam, D.-S. / Yeo, G.-S. / Park, J.-R. / Choi, S.-W. / Woo, S.-G. / Cho, H.-K. / Han, W.-S. / SPIE et al. | 2003
- 561
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Flare-induced CD variation correction using transmittance controlled maskNam, Dong-Seok / Yeo, Gi-Sung / Park, Jong Rak / Choi, Sung-Woon / Woo, Sang-Gyun / Cho, Han-Ku / Han, Woo-Sung et al. | 2003
- 570
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Study of the influence of substrate topography on the focusing performance of advanced lithography scanners [5040-47]La Fontaine, B. M. / Hauschild, J. / Dusa, M. V. / Acheta, A. / Apelgren, E. M. / Boonman, M. / Krist, J. / Khathuria, A. / Levinson, H. J. / Fumar-Pici, A. et al. | 2003
- 570
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Study of the influence of substrate topography on the focusing performance of advanced lithography scannersLa Fontaine, Bruno M. / Hauschild, Jan / Dusa, Mircea V. / Acheta, Alden / Apelgren, Eric M. / Boonman, Marc / Krist, Jouke / Khathuria, Ashok / Levinson, Harry J. / Fumar-Pici, Anita et al. | 2003
- 582
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Simple and highly sensitive focus monitoring utilizing an aperture on backside of photomask [5040-48]Nakao, S. / Sakai, J. / Maejima, S. / Ueno, A. / Nakae, A. / Yamashita, S. / Itano, K. / Kozawa, H. / Tokui, A. / Tsujita, K. et al. | 2003
- 582
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Simple and high sensitive focus monitoring utilizing an aperture on backside of photomaskNakao, Shuji / Sakai, Junjirou / Maejima, Shinroku / Ueno, Atsushi / Nakae, Akihiro / Yamashita, Shigenori / Itano, Ken-ichi / Kozawa, Hidehiko / Tokui, Akira / Tsujita, Kouichirou et al. | 2003
- 590
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Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition [5040-49]Izuha, K. / Asano, M. / Fujisawa, T. / Inoue, S. / SPIE et al. | 2003
- 590
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Novel in-situ focus monitor technology in attenuated PSM under actual illumination conditionIzuha, Kyoko / Asano, Masafumi / Fujisawa, Tadahito / Inoue, Soichi et al. | 2003
- 600
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Desirable wafer edge flatness for CD control in photolithography [5040-50]Fujisawa, T. / Inoue, S. / Hagiwara, T. / Kennichi, K. / Kobayashi, M. / Okumura, K. / SPIE et al. | 2003
- 600
-
Desirable wafer edge flatness for CD control in photolithographyFujisawa, Tadahito / Inoue, Soichi / Hagiwara, Tsuneyuki / Kennichi, Kodama / Kobayashi, Makoto / Okumura, Katsuya et al. | 2003
- 610
-
Aberration's impact on subresolution contact hole process windows in ultrathin imaging resist [5040-51]Reilly, M. T. / Finders, J. / Dusa, M. / SPIE et al. | 2003
- 610
-
Aberration's impact on subresolution contact hole process windows in ultrathin imaging resistReilly, Michael T. / Finders, Jo / Dusa, Mircea et al. | 2003
- 618
-
Image performance and mask characterization of 157-nm alternating phase-shifting mask [5040-52]Chen, Y.-T. / Meute, J. / Dean, K. R. / Stark, D. R. / Schilz, C. M. / Dettmann, W. / Koehle, R. / Schiessl, B. / Degel, W. / SPIE et al. | 2003
- 618
-
Image performance and mask characterization of 157-nm alternating phase-shifting maskChen, Yung-Tin / Meute, Jeff / Dean, Kim R. / Stark, David R. / Schilz, Christof M. / Dettmann, Wolfgang / Koehle, Roderick / Schiessl, Bettina / Degel, Wolfgang et al. | 2003
- 629
-
157-nm Micrascan VII initial lithography results [5040-53]Sewell, H. / Tirri, B. A. / O Neil, T. / Fahey, T. J. / McCafferty, D. C. / Reid, P. B. / McClay, J. A. / SPIE et al. | 2003
- 629
-
157-nm Micrascan VII initial lithography resultsSewell, Harry / Tirri, Bruce A. / O'Neil, Timothy / Fahey, Thomas J. / McCafferty, Diane C. / Reid, Paul B. / McClay, James A. et al. | 2003
- 640
-
Status 157-nm lithography development at IMECRonse, Kurt G. / De Bisschop, Peter / Eliat, Astrid / Goethals, Anne-Marie / Hermans, Jan / Jonckheere, Rik / Van Den Heuvel, Dieter / Van Roey, Frieda / Beckx, Stephan / Wouters, Johan M. et al. | 2003
- 640
-
Status of 157-nm lithography development at IMEC [5040-54]Ronse, K. G. / De Bisschop, P. / Eliat, A. / Goethals, A. M. / Hermans, J. / Jonckheere, R. / Van Den Heuvel, D. / Van Roey, F. / Beckx, S. / Wouters, J. M. et al. | 2003
- 650
-
Contamination rates of optical surfaces at 157 nm: impurities outgassed from construction materials and from photoresistsBloomstein, Theodore M. / Sedlacek, Jan H. C. / Palmacci, Stephen T. / Hardy, Dennis E. / Liberman, Vladimir / Rothschild, Mordechai et al. | 2003
- 650
-
Contamination rates of optical surfaces at 157-nm: impurities outgassed from construction materials and from photoresists [5040-55]Bloomstein, T. M. / Sedlacek, J. H. C. / Palmacci, S. T. / Hardy, D. E. / Liberman, V. / Rothschild, M. / SPIE et al. | 2003
- 662
-
On the optical anisotropy in the cubic crystal of CaF~2: scaling arguments and their relation to dispersing absorption [5040-56]Letz, M. / Gottwald, A. / Richter, M. / Brinkmann, M. / Wehrhan, G. / Parthier, L. / SPIE et al. | 2003
- 662
-
On the optical anisotropy in the cubic crystal of CaF2: scaling arguments and their relation to dispersing absorptionLetz, Martin / Gottwald, A. / Richter, M. / Brinkmann, Matthias / Wehrhan, G. / Parthier, Lutz et al. | 2003
- 667
-
Deep UV immersion interferometric lithographyRaub, Alex K. / Brueck, Steven R. J. et al. | 2003
- 667
-
Deep UV immersion interferometric lithography [5040-57]Raub, A. K. / Brueck, S. R. J. / SPIE et al. | 2003
- 679
-
Water immersion optical lithography for the 45-nm node [5040-58]Smith, B. W. / Kang, H. / Bourov, A. / Cropanese, F. / Fan, Y. / SPIE et al. | 2003
- 679
-
Water immersion optical lithography for 45-nm nodeSmith, Bruce W. / Kang, Hoyoung / Bourov, Anatoly / Cropanese, Frank / Fan, Yongfa et al. | 2003
- 690
-
Immersion liquids for lithography in the deep ultraviolet [5040-59]Switkes, M. / Kunz, R. R. / Sinta, R. F. / Rothschild, M. / Gallagher-Wetmore, P. M. / Krukonis, V. J. / Williams, K. / SPIE et al. | 2003
- 690
-
Immersion liquids for lithography in the deep ultravioletSwitkes, Michael / Kunz, Roderick R. / Sinta, Roger F. / Rothschild, Mordechai / Gallagher-Wetmore, Paula M. / Krukonis, Val J. / Williams, Kara et al. | 2003
- 700
-
Simulation of imaging and stray light effects in immersion lithography [5040-60]Hafeman, S. / Neureuther, A. R. / SPIE et al. | 2003
- 700
-
Simulation of imaging and stray light effects in immersion lithographyHafeman, Scott / Neureuther, Andrew R. et al. | 2003
- 713
-
Preliminary microfluidic simulations for immersion lithographyWei, Alexander C. / Nellis, Greg F. / Abdo, Amr Y. / Engelstad, Roxann L. / Chen, Cheng-Fu / Switkes, Michael / Rothschild, Mordechai et al. | 2003
- 713
-
Preliminary microfluidic simulation for immersion lithography [5040-61]Wei, A. C. / Nellis, G. F. / Abdo, A. Y. / Engelstad, R. L. / Chen, C.-F. / Switkes, M. / Rothschild, M. / SPIE et al. | 2003
- 724
-
Immersion lithography: its potential performance and issues [5040-186]Owa, S. / Nagasaka, H. / SPIE et al. | 2003
- 724
-
Immersion lithography; its potential performance and issuesOwa, Soichi / Nagasaka, Hiroyuki et al. | 2003
- 734
-
Critical enabling properties of CaF2lens blanks for state-of-the-art lithography toolsHahn, Joerg / Grabosch, Guenter / Parthier, Lutz / Knapp, Konrad et al. | 2003
- 734
-
Critical enabling properties of CaF~2 lens blanks for state-of-the-art lithography tools [5040-62]Hahn, J. / Grabosch, G. / Parthier, L. / Knapp, K. / SPIE et al. | 2003
- 742
-
Angle-resolved scattering measurements of polished surfaces and optical coatings at 157 nm [5040-63]Bloomstein, T. M. / Hardy, D. E. / Gomez, L. / Rothschild, M. / SPIE et al. | 2003
- 742
-
Angle-resolved scattering measurements of polished surfaces and optical coatings at 157 nmBloomstein, Theodore M. / Hardy, Dennis E. / Gomez, L. / Rothschild, Mordechai et al. | 2003
- 753
-
Optical lithography solutions for sub-65-nm semiconductor devices [5040-64]Mulkens, J. / McClay, J. A. / Tirri, B. A. / Brunotte, M. / Mecking, B. / Jasper, H. / SPIE et al. | 2003
- 753
-
Optical lithography solutions for sub-65-nm semiconductor devicesMulkens, Jan / McClay, James A. / Tirri, Bruce A. / Brunotte, Martin / Mecking, Birgit / Jasper, Hans et al. | 2003
- 763
-
Development status of a 157-nm full-field scannerNakano, Hitoshi / Hata, Hideo / Nogawa, Hideki / Deguchi, Nobuyoshi / Kohno, Michio / Chiba, Yuji et al. | 2003
- 763
-
Development status of a 157-nm full-field scanner [5040-65]Nakano, H. / Hata, H. / Nogawa, H. / Deguchi, N. / Kohno, M. / Chiba, Y. / SPIE et al. | 2003
- 772
-
Nikon F2 exposure tool developmentOwa, Soichi / Matsumoto, Yukako / Ohmura, Yasuhiro / Sakuma, Shigeru / Aoki, Takashi / Nishikawa, Jin / Nagasaka, Hiroyuki / Mizutani, Takeyuki / Shiraishi, Naomasa / Kido, Kazuhiro et al. | 2003
- 772
-
Nikon F2 exposure tool development [5040-66]Owa, S. / Matsumoto, Y. / Ohmura, Y. / Sakuma, S. / Aoki, T. / Nishikawa, J. / Nagasaka, H. / Mizutani, T. / Shiraishi, N. / Kido, K. et al. | 2003
- 781
-
Catadioptric lens development for DUV and VUV projection optics [5040-68]Ohmura, Y. / Nakagawa, M. / Matsuyama, T. / Shibazaki, Y. / SPIE et al. | 2003
- 781
-
Catadioptric lens development for DUV and VUV projection opticsOhmura, Yasuhiro / Nakagawa, Masahiro / Matsuyama, Tomoyuki / Shibazaki, Yuichi et al. | 2003
- 789
-
0.85-NA ArF exposure system and performancesKanda, Tsuneo / Shiode, Yoshihiro / Shinoda, Ken-ichiro et al. | 2003
- 789
-
0.85-NA ArF exposure system and performance [5040-69]Kanda, T. / Shiode, Y. / Shinoda, K. / SPIE et al. | 2003
- 801
-
Improving lens performance through the most recent lens manufacturing process [5040-70]Matsuyama, T. / Tanaka, I. / Ozawa, T. / Nomura, K. / Koyama, T. / SPIE et al. | 2003
- 801
-
Improving lens performance through the most recent lens manufacturing processMatsuyama, Tomoyuki / Tanaka, Issei / Ozawa, Toshihiko / Nomura, Kazushi / Koyama, Takashi et al. | 2003
- 811
-
Next-generation scanner for sub-100-nm lithography [5040-71]Fujita, I. / Sakai, F. M. / Uzawa, S. / SPIE et al. | 2003
- 811
-
Next-generation scanner to sub-100-nm lithographyFujita, Itaru / Sakai, Fumio M. / Uzawa, Shigeyuki et al. | 2003
- 822
-
Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applicationsde Klerk, Jos / Jorritsma, Louis / van Setten, Eelco / Droste, Richard / du Croo de Jongh, Richard / Hansen, Steven G. / Smith, Dan / van de Kerkhof, Mark A. / van de Mast, Frank / Graeupner, Paul et al. | 2003
- 822
-
Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications [5040-72]de Klerk, J. / Jorritsma, L. / van Setten, E. / Droste, R. / de Jongh, R. d. C. / Hansen, S. G. / Smith, D. / van de Kerkhof, M. A. / van de Mast, F. / Graupner, P. et al. | 2003
- 841
-
Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coatingLiu, Wei / Mui, David / Lill, Thorston / Wang, May D. / Bencher, Christopher / Kwan, Michael / Yeh, Wendy / Ebihara, Takeaki / Oga, Toshihiro et al. | 2003
- 841
-
Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and antireflective coating [5040-46]Liu, W. / Mui, D. / Lill, T. / Wang, M. D. / Bencher, C. / Kwan, M. / Yeh, W. / Ebihara, T. / Oga, T. / SPIE et al. | 2003
- 849
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Imaging performance extendibilityTyminski, Jacek K. / Slonaker, Steve D. et al. | 2003
- 849
-
Imaging performance extendibility [5040-73]Tyminski, J. K. / Slonaker, S. D. / SPIE et al. | 2003
- 861
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Detection of actual focus variations by focus automatic measurement [5040-74]Hoshino, D. / Yamauchi, T. / Watanabe, A. / Onodera, T. / Higashino, H. / SPIE et al. | 2003
- 861
-
Detection of actual focus variations by focus automatic measurementHoshino, Daigo / Yamauchi, Takashi / Watanabe, Akira / Onodera, Toshio / Higashino, Hidehiro et al. | 2003
- 871
-
Process window monitoring: an emerging requirement for efficient low-k~1 lithography [5040-76]Chiua, S. S. / Chu, Y. C. / Hsieh, J. C. / Mo, W. P. / Wu, C. M. / Teng, T. / Slessor, M. D. / SPIE et al. | 2003
- 871
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Process window monitoring: an emerging requirement for efficient low-k1 lithographyChiua, S. S. / Chu, Yao-Chang / Hsieh, J. C. / Mo, Wang Pen / Wu, C. M. / Teng, Thomas / Slessor, Mike D. et al. | 2003
- 882
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Lithographic process optimization using process capability analysis [5040-77]van Wingerden, J. / Dirksen, P. / Juffermans, C. A. H. / Trouiller, Y. / SPIE et al. | 2003
- 882
-
Lithographic process optimization using process capability analysisvan Wingerden, Johannes / Dirksen, Peter / Juffermans, Casper A. H. / Trouiller, Yorick et al. | 2003
- 894
-
Characterization of optical proximity matching for 130-nm node gate line widthZheng, Sandra / Zhang, Gary / Wang, ChangAn / Detweiler, Shangting F. et al. | 2003
- 894
-
Characterization of optical proximity matching for 130-nm node gate line width [5040-80]Zheng, S. / Zhang, G. / Wang, C. A. / Detweiler, S. F. / SPIE et al. | 2003
- 906
-
Exposure field size considerations for yieldSchroeder, Uwe P. / Kunkel, Gerhard et al. | 2003
- 906
-
Exposure field size considerations for yield [5040-81]Schroder, U. P. / Kunkel, G. / SPIE et al. | 2003
- 912
-
BARC-resist interfacial interactionsDevadoss, Chelladurai / Wang, Yubao / Puligadda, Rama / Lenhart, Joseph L. / Jablonski, Erin L. / Fischer, Daniel A. / Sambasivan, Sharadha / Lin, Eric K. / Wu, Wen-li et al. | 2003
- 912
-
Investigation of BARC-resist interfacial interactions [5040-82]Devadoss, C. / Wang, Y. / Puligadda, R. / Lenhart, J. L. / Jablonski, E. L. / Fischer, D. A. / Sambasivan, S. / Lin, E. K. / Wu, W.-L. / SPIE et al. | 2003
- 923
-
Impact of scanner illumination mode on CD control process marginDetweiler, Shangting F. / Zheng, Sandra / Boehm, Mark A. et al. | 2003
- 923
-
Impact of scanner illumination mode on CD control process margin [5040-84]Detweiler, S. F. / Zheng, S. / Boehm, M. A. / SPIE et al. | 2003
- 932
-
Tool-to-tool matching in photolithography: process control of CD and pitchNg, Luke K. C. / Zhou, WenZhen et al. | 2003
- 932
-
Tool-to-tool matching in photolithography: process control of CD and pitch [5040-85]Ng, L. K. C. / Zhou, W. / SPIE et al. | 2003
- 941
-
Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepperHyun, Yoon-Suk / Kim, Dong-Joo / Koh, Cha-Won / Park, Sung-Nam / Kwon, Won-Taik et al. | 2003
- 941
-
Characterization and improvement of field CD uniformity for implementation of 0.15-mum technology device using KrF stepper [5040-86]Hyun, Y.-S. / Kim, D.-J. / Koh, C.-W. / Park, S.-N. / Kwon, W.-T. / SPIE et al. | 2003
- 948
-
Optimization of the contact layer for 90-nm node lithographyStrozewski, Kirk J. / Zavyalova, Lena / Lucas, Kevin et al. | 2003
- 948
-
Optimization of the contact layer for 90-nm node lithography [5040-88]Strozewski, K. J. / Zavyalova, L. / Lucas, K. / SPIE et al. | 2003
- 955
-
Maximization of process window for low-k~1 spaces using KrF lithography [5040-89]Fu, S.-C. / Kuo, C.-S. / Shiu, F.-J. / Chen, J.-J. / Tsia, C.-S. / Ho, C.-T. / Wang, C. / SPIE et al. | 2003
- 955
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Maximization of process window for low-k1spacing using KrF lithographyFu, Shih-Chi / Kuo, Ching-Sen / Shiu, Feng-Jia / Chen, Jieh-Jang / Tsia, Chia-Shiung / Ho, Chia-Tong / Wang, Chung et al. | 2003
- 967
-
Impact of scattering bars in damascene trench patterningMehta, Sohan S. / Singh, Navab / Mukherjee-Roy, Moitreyee / Kumar, Rakesh et al. | 2003
- 967
-
Impact of scattering bars in damascene trench patterning [5040-90]Mehta, S. S. / Singh, N. / Mukherjee-Roy, M. / Kumar, R. / SPIE et al. | 2003
- 972
-
Advanced process control applied to 90-nm lithography and etchKota, Gowri P. / Luque, Jorge / Dusa, Mircea V. / Hunter, Adolph et al. | 2003
- 972
-
Advanced process control applied to 90-nm node lithography and etch [5040-91]Kota, G. P. / Luque, J. / Dusa, M. V. / Hunter, A. / SPIE et al. | 2003
- 979
-
Single-write self-aligned rim-phase-shift processGarza, Cesar M. / Wu, Wei / Roman, Bernard J. / Mangat, Pawitter J. S. / Nordquist, Kevin J. / Dauksher, William J. et al. | 2003
- 979
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A single-write self-aligned rim-phase-shift process [5040-92]Garza, C. M. / Wu, W. / Roman, B. J. / Mangat, P. J. S. / Nordquist, K. J. / Dauksher, W. J. / SPIE et al. | 2003
- 986
-
Application-specific methods for creating simulation masks [5040-93]Howard, W. B. / Taylor, D. / SPIE et al. | 2003
- 986
-
Application-specific methods for creating simulation masksHoward, William B. / Taylor, Darren et al. | 2003
- 998
-
Sol-gel fabrication of high-quality photomask substrates [5040-95]Ganguli, R. / Meixner, D. L. / Colbern, S. G. / Gleason, M. S. / Meyers, D. E. / Chaudhuri, S. R. / SPIE et al. | 2003
- 998
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Sol-gel fabrication of high-quality photomask substratesGanguli, Rahul / Meixner, D. L. / Colbern, Steve G. / Gleason, Matt S. / Meyers, Douglas E. / Chaudhuri, Satyabrata R. et al. | 2003
- 1006
-
Impact of inter-mask CD error on OPC accuracy for resolutions of 90 nm and belowOzawa, Ken / Sato, Shunichiro / Ohnuma, Hidetoshi et al. | 2003
- 1006
-
Impact of inter-mask CD error on OPC accuracy in resolution of 90 nm and below [5040-96]Ozawa, K. / Sato, S. / Ohnuma, H. / SPIE et al. | 2003
- 1018
-
Porous silica frame for deep UV lithographyMeixner, D. L. / Ganguli, Rahul / Robinson, Troy / Jeng, De-Yin / Morris, Mark W. / Chaudhuri, Satyabrata / Grenon, Brian J. et al. | 2003
- 1018
-
Porous silica frame for deep UV lithography [5040-97]Meixner, D. L. / Ganguli, R. / Robinson, T. / Jeng, D.-Y. / Morris, M. W. / Chaudhuri, S. R. / Grenon, B. J. / SPIE et al. | 2003
- 1025
-
Enhancement of CD uniformity and throughput with KrF photomask repeater [5040-98]Ha, T.-J. / Choi, Y.-K. / Han, O. / SPIE et al. | 2003
- 1025
-
Enhancement of CD uniformity and throughput with KrF photomask repeaterHa, Tae-Joong / Choi, Yong-Kyoo / Han, Oscar et al. | 2003
- 1035
-
Theoretical corner rounding analysis and mask writer simulation [5040-99]Jones, R. L. / Byers, J. D. / SPIE et al. | 2003
- 1035
-
Theoretical corner rounding analysis and mask writer simulationJones, Robert L. / Byers, Jeffrey D. et al. | 2003
- 1044
-
Effects of soft pellicle frame curvature and mounting process on pellicle-induced distortions in advanced photomasksCotte, Eric P. / Engelstad, Roxann L. / Lovell, Edward G. / Tanzil, Daniel / Eschbach, Florence O. / Korobko, Yulia O. / Fujita, Minoru / Nakagawa, Hiroaki et al. | 2003
- 1044
-
Effects of soft pellicle frame curvature and mounting process on pellicle-induced distortions in advanced photomasks [5040-100]Cotte, E. P. / Engelstad, R. L. / Lovell, E. G. / Tanzil, D. / Eschbach, F. O. / Korobko, Y. O. / Fujita, M. / Nakagawa, H. / SPIE et al. | 2003
- 1055
-
Contact-hole MEEF comparison between ALTA and 50-KeV written masks [5040-101]Sturtevant, J. L. / Opitz, J. / Word, J. C. / SPIE et al. | 2003
- 1055
-
Contact-hole MEEF comparison between ALTA and 50-KeV written masksSturtevant, John L. / Opitz, Juliann / Word, James C. et al. | 2003
- 1062
-
Photoblanks for advanced lithography based on Corning high-purity fused silica (HPFS)Walton, Robin M. et al. | 2003
- 1062
-
Photoblanks for advanced lithography based on Corning high-purity fused silica (HPFS) [5040-102]Walton, R. M. / SPIE et al. | 2003
- 1067
-
Impact of mask defect in a high MEEF process [5040-104]Jeong, C.-Y. / Park, K.-Y. / Choi, J. S. / Lee, J. G. / Lee, D.-H. / SPIE et al. | 2003
- 1067
-
Impact of mask defect in a high MEEF processJeong, Chang-Young / Park, Ki-Yeop / Choi, Jae-Sung / Lee, Jeong-Gun / Lee, Dai-Hoon et al. | 2003
- 1079
-
Guideline of reticle data managementMiyazaki, Norihiko / Iriki, N. / Homma, M. / Sato, T. / Mori, M. / Imoriya, Tadashi / Onodera, Toshio / Matsuda, T. / Higashino, Hidehiro / Okuda, K. et al. | 2003
- 1079
-
Guideline of reticle data management [5040-105]Miyazaki, N. / Iriki, N. / Homma, M. / Sato, T. / Mori, M. / Imoriya, T. / Onodera, T. / Matsuda, T. / Higashino, H. / Okuda, K. et al. | 2003
- 1091
-
Extending ArF to the 65-nm node with full-phase lithography [5040-106]Driessen, F. A. / Pierrat, C. / Vandenberghe, G. / Ronse, K. G. / van Adrichem, P. / Liu, H.-Y. / SPIE et al. | 2003
- 1091
-
Extending ArF to the 65-nm node with full-phase lithographyDriessen, Frank A. / Pierrat, Christophe / Vandenberghe, Geert / Ronse, Kurt G. / van Adrichem, Paul / Liu, Hua-Yu et al. | 2003
- 1103
-
Evaluation of SCAA mask technology as a pathway to the 65-nm nodeBeach, James V. / Petersen, John S. / Maslow, Mark J. / Gerold, David J. / McCafferty, Diane C. et al. | 2003
- 1103
-
Evaluation of SCAA mask technology as a pathway to the 65-nm node [5040-107]Beach, J. V. / Petersen, J. S. / Maslow, M. J. / Gerold, D. J. / McCafferty, D. C. / SPIE et al. | 2003
- 1115
-
Feasibility evaluations of alternating phase-shift mask for imaging sub-80-nm feature with KrF [5040-108]Kang, M.-A. / Kim, S.-H. / Shin, I.-K. / Choi, S.-W. / Sohn, J.-M. / SPIE et al. | 2003
- 1115
-
Feasibility evaluations of alternating phase-shift mask for imaging sub-80nm feature with KrFKang, Myung-Ah / Kim, Sung-Hyuck / Shin, In-Kyun / Choi, Seong-Woon / Sohn, Jung-Min et al. | 2003
- 1125
-
Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography [5040-109]Tan, S. K. / Lin, Q. / Hsia, L. C. / Sun, S.-C. / SPIE et al. | 2003
- 1125
-
Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithographyTan, Sia-Kim / Lin, Qunying / Hsia, Liang Choo / Sun, Shi-Chung et al. | 2003
- 1137
-
Feasibility study of SCAAM-type Alt-PSM for 157-nm lithography [5040-110]Morikawa, Y. / Kokubo, H. / Noguchi, K. / Sasaki, S. / Mohri, H. / Hoga, M. / Kanda, N. / Irie, S. / Watanabe, K. / Suganaga, T. et al. | 2003
- 1137
-
Feasibility study of SCAAM-type Alt-PSM for 157-nm lithographyMorikawa, Yasutaka / Kokubo, Haruo / Noguchi, Kenji / Sasaki, Shiho / Mohri, Hiroshi / Hoga, Morihisa / Kanda, Noriyoshi / Irie, Shigeo / Watanabe, Kunio / Suganaga, Toshifumi et al. | 2003
- 1146
-
Simulation of sub-90-nm node complementary phase-shift processes with ArF lithographyCheng, Mosong / Ho, Benjamin C. P. / Nafus, Kathleen et al. | 2003
- 1146
-
Simulation of sub-90-nm node complementary phase-shift processes with ArF lithography [5040-111]Cheng, M. / Ho, B. C. P. / Nafus, K. / SPIE et al. | 2003
- 1156
-
Model-based PPC verification methodology with two-dimensional pattern feature extraction [5040-112]Hashimoto, K. / Ito, T. / Ikeda, T. / Nojima, S. / Inoue, S. / SPIE et al. | 2003
- 1156
-
Model-based PPC verification methodology with two dimensional pattern feature extractionHashimoto, Kohji / Ito, Takeshi / Ikeda, Takahiro / Nojima, Shigeki / Inoue, Soichi et al. | 2003
- 1166
-
New process models for OPC at sub-90-nm nodes [5040-113]Granik, Y. / Cobb, N. B. / SPIE et al. | 2003
- 1166
-
New process models for OPC at sub-90-nm nodesGranik, Yuri / Cobb, Nicolas B. et al. | 2003
- 1176
-
Hybrid PPC methodology using multistep correction and implementation for the sub-100-nm node [5040-114]Choi, S.-H. / Park, J.-S. / Park, C.-H. / Chung, W.-Y. / Kim, I.-S. / Kim, D.-H. / Kim, Y.-H. / Yoo, M.-H. / Kong, J.-T. / SPIE et al. | 2003
- 1176
-
Hybrid PPC methodology using multi-step correction and implementation for the sub-100-nm nodeChoi, Soo-Han / Park, Ji-Soong / Park, Chul-Hong / Chung, Won-Young / Kim, In-sung / Kim, Dong-Hyun / Kim, Yoo-Hyon / Yoo, Moon-Hyun / Kong, Jeong-Taek et al. | 2003
- 1184
-
Image fidelity improvement through optical proximity correction and its limits [5040-115]Burkhardt, M. / Seong, N. / SPIE et al. | 2003
- 1184
-
Image fidelity improvement through optical proximity correction and its limitsBurkhardt, Martin / Seong, Nakgeuon et al. | 2003
- 1194
-
Challenge for effective OCV control in 90-nm logic gate using ArF lithography [5040-117]Kang, H.-J. / Lee, S.-W. / Lee, D.-Y. / Yeo, G.-S. / Lee, J.-H. / Cho, H.-K. / Han, W.-S. / Moon, J.-T. / SPIE et al. | 2003
- 1194
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Challenge for effective OCV control in 90-nm logic gate using ArF lithographyKang, Hyun-Jae / Lee, Sung-Woo / Lee, Doo-Youl / Yeo, Gi-Sung / Lee, Jung-Hyeon / Cho, Han-Ku / Han, Woo-Sung / Moon, Joo-Tae et al. | 2003
- 1202
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Multiple-stage optical proximity correction [5040-120]Beale, D. F. / Shiely, J. P. / Rieger, M. L. / SPIE et al. | 2003
- 1202
-
Multiple-stage optical proximity correctionBeale, Daniel F. / Shiely, James P. / Rieger, Michael L. et al. | 2003
- 1210
-
Mighty high-T lithography for 65-nm generation contacts [5040-122]Conley, W. / Montgomery, P. K. / Lucas, K. / Litt, L. C. / Maltabes, J. G. / Dieu, L. / Hughes, G. P. / Mellenthin, D. L. / Socha, R. J. / Fanucchi, E. L. et al. | 2003
- 1210
-
Mighty high-T lithography for 65-nm generation contactsConley, Will / Montgomery, Patrick K. / Lucas, Kevin / Litt, Lloyd C. / Maltabes, John G. / Dieu, Laurent / Hughes, Gregory P. / Mellenthin, David L. / Socha, Robert J. / Fanucchi, Eric L. et al. | 2003
- 1220
-
Improved outline phase-shifting mask (OL-PSM) for reduction of the mask error enhancement factor [5040-124]Misaka, A. / Matsuo, T. / Sasago, M. / SPIE et al. | 2003
- 1220
-
Improved outline phase shifting mask (OL-PSM) for reduction of the mask error enhancement factorMisaka, Akio / Matsuo, Takahiro / Sasago, Masaru et al. | 2003
- 1231
-
Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach xTrouiller, Yorick / Belledent, Jerome / Chapon, J. D. / Rousset, V. / Rody, Yves F. / Manakli, Serdar / Goirand, Pierre-Jerome et al. | 2003
- 1231
-
Gate imaging for 0.09-mum logic technology: comparison of single exposure with assist bars and the CODE approach [5040-125]Trouiller, Y. / Belledent, J. / Chapon, J.-D. / Rousset, V. / Rody, Y. F. / Manakli, S. / Goirand, P.-J. / SPIE et al. | 2003
- 1241
-
Low-proximity contact hole formation by using double-exposure technology (DET)Chang, Charles / Yang, Elvis / Wu, Tzong-Shane / Yang, Ta-Hung / Hsueh, Calvin C. et al. | 2003
- 1241
-
Low-proximity contact hole formation using double-exposure technology (DET) [5040-126]Chang, C. / Yang, E. / Wu, T. S. / Yang, T.-H. / Hsueh, C. C. / SPIE et al. | 2003
- 1247
-
Evaluation of various pitches of 100-nm contact holes applying IDEALSmile with high NA KrF scanner [5040-127]Ebihara, T. / Oga, T. / SPIE et al. | 2003
- 1247
-
Evaluation of various pitches of 100-nm contact holes applying IDEALSmile with high NA KrF scannerEbihara, Takeaki / Oga, Toshihiro et al. | 2003
- 1258
-
Zero MEF hole formation with Atten-PSM and modified illuminationNakao, Shuji / Miyagi, Tadashi / Tarutani, Shinji / Yamashita, Shigenori / Miyazaki, Junji / Kozawa, Hidehiko / Tokui, Akira / Tsujita, Kouichirou et al. | 2003
- 1258
-
Zero MEF hole formation with Atten-PSM and modified illumination [5040-128]Nakao, S. / Miyagi, T. / Tarutani, S. / Yamashita, S. / Miyazaki, J. / Kozawa, H. / Tokui, A. / Tsujita, K. / SPIE et al. | 2003
- 1270
-
Optical lithography at half the Rayleigh resolution limit by two-photon absorption resistEzaki, Hiromi / Shibuya, Masato et al. | 2003
- 1270
-
Optical lithography at half the Rayleigh resolution limit by two-photon absorption resist [5040-129]Ezaki, H. / Shibuya, M. / SPIE et al. | 2003
- 1276
-
Grating analysis of frequency parsing strategies for imaging interferometric lithography [5040-132]Wu, E. S. / Santhanam, B. / Brueck, S. R. J. / SPIE et al. | 2003
- 1276
-
Grating analysis of frequency parsing strategies for imaging interferometric lithographyWu, Eric S. / Santhanam, Balu / Brueck, Steven R. J. et al. | 2003
- 1284
-
Dipole options for 90-nm lithography technologies and belowChua, Gek S. / Tay, Cho J. / Quan, Chenggen / Lin, Qunying / Chua, Leng-Hai et al. | 2003
- 1284
-
Dipole options for 90-nm lithography technologies and below [5040-133]Chua, G. S. / Tay, C. J. / Quan, C. / Lin, Q. / Chua, L. H. / SPIE et al. | 2003
- 1296
-
ArF issues of 90-nm-node DRAM device integrationGoo, Doo-Hoon / Kim, Byeong-Soo / Park, Joon-Soo / Yoon, Kwang-Sub / Lee, Jung-Hyeon / Cho, Han-Ku / Han, Woo-Sung / Moon, Joo-Tae et al. | 2003
- 1296
-
ArF issues of 90-nm node DRAM device integration [5040-135]Goo, D.-H. / Kim, B.-S. / Park, J.-S. / Yoon, K.-S. / Lee, J.-H. / Cho, H.-K. / Han, W.-S. / Moon, J.-T. / SPIE et al. | 2003
- 1304
-
Process latitude extension in low k1DRAM lithography using specific layer-oriented illumination designKang, Young S. / Nam, Dong-Seok / Hwang, Chan / Woo, Sang-Gyun / Cho, Han-Ku / Han, Woo-Sung et al. | 2003
- 1304
-
Process latitude extension in low-k~1 DRAM lithography using specific layer-oriented illumination design [5040-136]Kang, Y.-S. / Nam, D.-S. / Hwang, C. / Woo, S.-G. / Cho, H.-K. / Han, W.-S. / SPIE et al. | 2003
- 1310
-
Comparative study of chromeless and attenuated phase shift mask for 0.3-k1ArF lithography of DRAMEom, Tae-Seung / Lim, Chang M. / Kim, Seo-Min / Kim, Hee-Bom / Oh, Se-Young / Ma, Won-Kwang / Moon, Seung-Chan / Shin, Ki S. et al. | 2003
- 1310
-
Comparative study of chromeless and attenuated phase-shift mask for 0.3-k~1 ArF lithography of DRAM [5040-137]Eom, T.-S. / Lim, C.-M. / Kim, S.-M. / Kim, H.-B. / Oh, S.-Y. / Ma, W.-K. / Moon, S.-C. / Shin, K.-S. / SPIE et al. | 2003
- 1321
-
Printing 95-nm DRAM full chip patterns in KrF lithographyKim, Seok-Kyun / Kim, Jin-Soo / Yoo, Tae-Jun / Kong, Keun-Kyu / Yun, Hyoung-Soon / Kim, Young-Deuk / Kim, Hyoung-Ryeun / Kim, Young-Sik / Kim, Hyeong-Soo et al. | 2003
- 1321
-
Printing 95-nm DRAM full chip patterns in KrF lithography [5040-138]Kim, S.-K. / Kim, J.-S. / You, T.-J. / Kong, K.-K. / Yun, H.-S. / Kim, Y.-D. / Kim, H.-R. / Kim, Y.-S. / Kim, H. S. / SPIE et al. | 2003
- 1327
-
Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era [5040-139]You, T.-J. / Kim, H. S. / Kim, J.-S. / Kim, S.-K. / Kim, Y.-D. / Youn, H. S. / Kong, K.-K. / SPIE et al. | 2003
- 1327
-
Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography eraYou, Tae-Jun / Kim, Hyeong-Soo / Kim, Jin-Soo / Kim, Seok-Kyun / Kim, Young-Deuk / Youn, Hyeong Sun / Kong, Keun-Kyu et al. | 2003
- 1335
-
Challenges of implementing 193-nm lithography in printing sub-70nm line patterns for thin film headsWang, Chun-Ming / Hwu, Justin J. / Minvielle, Timothy J. et al. | 2003
- 1335
-
Challenges of implementing 193-nm lithography in printing sub-70-nm line patterns for thin film heads [5040-140]Wang, C.-M. / Hwu, J. J. / Minvielle, T. J. / SPIE et al. | 2003
- 1344
-
High-power excimer lasers for 157-nm lithography [5040-141]Spratte, S. / Voss, F. / Bragin, I. / Bergmann, E. / Niemoeller, N. / Nagy, T. / Rebhan, U. / Targsdorf, A. / Paetzel, R. / Govorkov, S. V. et al. | 2003
- 1344
-
High-power excimer lasers for 157-nm lithographySpratte, Stefan / Voss, Frank / Bragin, Igor / Bergmann, Elko / Niemoeller, Norbert / Nagy, Tamas / Rebhan, Ulrich / Targsdorf, Andreas / Paetzel, Rainer / Govorkov, Sergei V. et al. | 2003
- 1352
-
Overcoming the resolution challenge using special illumination techniques to print 50/50-nm nested contact holes at 157-nm wavelength [5040-142]Baba-Ali, N. / Sewell, H. / Kreuzer, J. / SPIE et al. | 2003
- 1352
-
Overcoming the resolution challenge using special illumination techniques to print 50/50-nm nested contact holes at 157-nm wavelengthBaba-Ali, Nabila / Sewell, Harry / Kreuzer, Justin et al. | 2003
- 1363
-
Spectral dynamics analysis of ultra-line-narrowed F~2 laser [5040-143]Kumazaki, T. / Wakabayashi, O. / Nohdomi, R. / Ariga, T. / Watanabe, H. / Hotta, K. / Mizoguchi, H. / Tanaka, H. / Takahashi, A. / Okada, T. et al. | 2003
- 1363
-
Spectral dynamics analysis of utlra-line-narrowed F2laserKumazaki, Takahito / Wakabayashi, Osamu / Nohdomi, Ryoichi / Ariga, Tatsuya / Watanabe, Hidenori / Hotta, Kazuaki / Mizoguchi, Hakaru / Tanaka, Hiroki / Takahashi, Akihiko / Okada, Tatsuo et al. | 2003
- 1371
-
Development of an organic bottom antireflective coating for 157-nm lithography [5040-144]Irie, S. / Shigematsu, M. / Miyoshi, S. / Sakamoto, R. / Mizusawa, K. / Nakajima, Y. / Itani, T. / SPIE et al. | 2003
- 1371
-
Development of organic bottom antireflective coating for 157-nm lithographyIrie, Shigeo / Shigematsu, Masato / Miyoshi, Seiro / Sakamoto, Rikimaru / Mizusawa, Kenichi / Nakajima, Yasuyuki / Itani, Toshiro et al. | 2003
- 1378
-
Impact of attenuated phase-shifting mask for 157-nm lithography with high numerical aperture lensWatanabe, Kunio / Kurose, Eiji / Suganaga, Toshifumi / Itani, Toshiro et al. | 2003
- 1378
-
Impact of attenuated phase-shifting mask for 157-nm lithography with high numerical aperture lens [5040-145]Watanabe, K. / Kurose, E. / Suganaga, T. / Itani, T. / SPIE et al. | 2003
- 1386
-
Bottom antireflective coatings (BARCs) for 157-nm lithography [5040-146]He, L. / Puligadda, R. / Lowes, J. / Rich, M. D. / SPIE et al. | 2003
- 1386
-
Bottom antireflective coatings (BARCs) for 157-nm lithographyHe, Liu / Puligadda, Rama / Lowes, Joyce / Rich, Michael D. et al. | 2003
- 1396
-
Scattering losses in fused silica and CaF~2 for DUV applications [5040-191]Logunov, S. L. / Kuchinsky, S. A. / SPIE et al. | 2003
- 1396
-
Scattering losses in fused silica and CaF2for DUV applicationsLogunov, Stephan L. / Kuchinsky, Sergey A. et al. | 2003
- 1408
-
Wavefront aberration measurement in 157-nm high numerical aperture lens [5040-148]Kim, J.-H. / Suganaga, T. / Watanabe, K. / Kanda, N. / Itani, T. / Cashmore, J. S. / Gower, M. C. / SPIE et al. | 2003
- 1408
-
Wavefront aberration measurement in 157-nm high numerical aperture lensKim, Jaehwan / Suganaga, Toshifumi / Watanabe, Kunio / Kanda, Noriyoshi / Itani, Toshiro / Cashmore, Julian S. / Gower, Malcolm C. et al. | 2003
- 1420
-
Experimental assessment of pattern and-probe aberration monitorsRobins, Garth C. / Neureuther, Andrew R. et al. | 2003
- 1420
-
Experimental assessment of pattern and probe-based aberration monitors [5040-149]Robins, G. C. / Neureuther, A. R. / SPIE et al. | 2003
- 1432
-
Tool ranking using aberration measurements in a high-volume manufacturing facilityGarza, Cesar M. / Warrick, Scott P. / Seligman, Gary S. / Zavyalova, Lena V. / van Zwol, Adrian / Foster, James et al. | 2003
- 1432
-
Tool ranking using aberration measurements in a high-volume manufacturing facility [5040-150]Garza, C. M. / Warrick, S. P. / Seligman, G. S. / Zavyalova, L. V. / van Zwol, A. / Foster, J. / SPIE et al. | 2003
- 1441
-
Monolithic detector array comprised of >1000 aerial image sensing elements [5040-151]Kunz, R. R. / Rathman, D. D. / Spector, S. J. / Yeung, M. S. / SPIE et al. | 2003
- 1441
-
Monolithic detector array comprised of >1000 aerial image sensing elementsKunz, Roderick R. / Rathman, Dennis D. / Spector, Steven J. / Yeung, Michael S. et al. | 2003
- 1456
-
Evaluating scanner lens spherical aberration using scatterometer [5040-153]Wang, C. / Zhang, G. / Tan, C. L. / Atkinson, C. / Boehm, M. A. / Brown, J. M. / Godfrey, D. / Littau, M. E. / Raymond, C. J. / SPIE et al. | 2003
- 1456
-
Evaluating scanner lens spherical aberration using scatterometerWang, Changan / Zhang, Gary / Tan, Colin L. / Atkinson, Chris / Boehm, Mark A. / Brown, Jay M. / Godfrey, David / Littau, Michael E. / Raymond, Christopher J. et al. | 2003
- 1465
-
Pupil-fill imperfections and their effect on lithography [5040-154]Renwick, S. P. / Slonaker, S. D. / SPIE et al. | 2003
- 1465
-
Pupil-fill imperfections and their effect on lithographyRenwick, Stephen P. / Slonaker, Steven D. et al. | 2003
- 1477
-
Programmable lithography engine (ProLE) grid-type supercomputer and its applicationsPetersen, John S. / Maslow, Mark J. / Gerold, David J. / Greenway, Robert T. et al. | 2003
- 1477
-
Programmable lithography engine (ProLE) grid-type supercomputer and its applications [5040-157]Petersen, J. S. / Maslow, M. J. / Gerold, D. J. / Greenway, R. T. / SPIE et al. | 2003
- 1492
-
Domain decomposition methods for simulation of printing and inspection of phase defectsLam, Michael / Adam, Konstantinos / Neureuther, Andrew R. et al. | 2003
- 1492
-
Domain decomposition methods for simulation of printing and inspection of phase defects [5040-158]Lam, M. / Adam, K. / Neureuther, A. R. / SPIE et al. | 2003
- 1502
-
Theoretical consideration on quantum lithography with conventional projection [5040-161]Fujii, T. / Fukutake, N. / Osawa, H. / Ooki, H. / SPIE et al. | 2003
- 1502
-
Theoretical consideration on quantum lithography with conventional projectionFujii, Toru / Fukutake, Naoki / Osawa, Hisao / Ooki, Hiroshi et al. | 2003
- 1509
-
Process sensitivity and optimization with full and simplified resist modelsSmith, Mark D. / Mack, Chris A. et al. | 2003
- 1509
-
Process sensitivity and optimization with full and simplified resist models [5040-162]Smith, M. D. / Mack, C. A. / SPIE et al. | 2003
- 1521
-
Resist footing variation and compensation over nonplanar wafer [5040-163]Sato, T. / Endo, A. / Hashimoto, K. / Inoue, S. / Shibata, T. / Kobayashi, Y. / SPIE et al. | 2003
- 1521
-
Resist footing variation and compensation over nonplanar waferSato, Takashi / Endo, Ayako / Hashimoto, Kohji / Inoue, Soichi / Shibata, Tsuyoshi / Kobayashi, Yuuji et al. | 2003
- 1529
-
Comparison of vector theories for aerial image calculation [5040-164]Ahn, B.-S. / Zinn, S. Y. / Choi, S.-W. / Sohn, J.-M. / SPIE et al. | 2003
- 1529
-
Comparison of vector theories for aerial image calculationAhn, Byoung Sup / Zinn, Sonny Y. / Choi, Sung-Woon / Sohn, Jung-Min et al. | 2003
- 1536
-
Validity of the diffused aerial image model: an assessment based on multiple test casesFuard, David / Besacier, Maxime / Schiavone, Patrick et al. | 2003
- 1536
-
Validity of the diffused aerial image model: an assessment based on multiple test cases [5040-165]Fuard, D. / Besacier, M. / Schiavone, P. / SPIE et al. | 2003
- 1544
-
Simulation benchmarking [5040-189]Tyminski, J. K. / Nakashima, T. / Kudo, T. / Slonaker, S. D. / Hirukawa, S. / SPIE et al. | 2003
- 1544
-
Simulation benchmarkingTyminski, Jacek K. / Nakashima, Toshiharu / Kudo, Takehito / Slonaker, Steve D. / Hirukawa, Shigeru et al. | 2003
- 1556
-
Practical resist model calibrationBaluswamy, Pary / Weatherly, Amy / Kewley, Dave / Brooker, Peter / Pauzer, Mike et al. | 2003
- 1556
-
Practical resist model calibration [5040-166]Baluswamy, P. / Weatherly, A. / Kewley, D. / Brooker, P. / Pauzer, M. / SPIE et al. | 2003
- 1570
-
Image-blur tolerances for 65-nm and 45-nm node IC manufacturingLalovic, Ivan / Kroyan, Armen / Kye, Jongwook / Liu, Hua-Yu / Levinson, Harry J. et al. | 2003
- 1570
-
Image-blur tolerances for 65-nm and 45-nm node IC manufacturing [5040-167]Lalovic, I. / Kroyan, A. / Kye, J. / Liu, H.-Y. / Levinson, H. J. / SPIE et al. | 2003
- 1581
-
Aberration optimizing system using Zernike sensitivity methodShimizu, Yasuo / Yamaguchi, Tadashi / Suzuki, Kousuke / Shiba, Yuji / Matsuyama, Tomoyuki / Hirukawa, Shigeru et al. | 2003
- 1581
-
Aberration optimizing system using Zernike sensitivity method [5040-168]Shimizu, Y. / Yamaguchi, T. / Suzuki, K. / Shiba, Y. / Matsuyama, T. / Hirukawa, S. / SPIE et al. | 2003
- 1591
-
Web tool for worst-case assessment of aberration effects in printing a layoutGennari, Frank E. / Madahar, Sachan / Neureuther, Andrew R. et al. | 2003
- 1591
-
Web tool for worst-case assessment of aberration effects in printing a layout [5040-169]Gennari, F. E. / Madahar, S. / Neureuther, A. R. / SPIE et al. | 2003
- 1600
-
Zernike sensitivity method for CD distributionNakashima, Toshiharu / Slonaker, Steve D. / Kudo, Takehito / Hirukawa, Shigeru et al. | 2003
- 1600
-
Evaluation of Zernike sensitivity method for CD distribution [5040-170]Nakashima, T. / Slonaker, S. D. / Kudo, T. / Hirukawa, S. / SPIE et al. | 2003
- 1611
-
Boundary layer model to account for thick mask effects in photolithography [5040-171]Tirapu-Azpiroz, J. / Burchard, P. / Yablonovitch, E. / SPIE et al. | 2003
- 1611
-
Boundary layer model to account for thick mask effects in photolithographyTirapu-Azpiroz, Jaione / Burchard, Paul / Yablonovitch, Eli et al. | 2003
- 1620
-
Simulation study of process latitude for liquid immersion lithographyBaek, So-Yeon / Cole, Daniel C. / Rothschild, Mordechai / Switkes, Michael / Yeung, Michael S. / Barouch, Eytan et al. | 2003
- 1620
-
Simulation study of process latitude for liquid immersion lithography [5040-187]Baek, S.-Y. / Cole, D. C. / Rothschild, M. / Switkes, M. / Yeung, M. S. / Barouch, E. / SPIE et al. | 2003
- 1631
-
Accelerated damage to blank and antireflectance-coated CaF~2 surfaces under 157-nm laser irradiation [5040-172]Liberman, V. / Rothschild, M. / Palmacci, S. T. / Efremow, N. N. / Sedlacek, J. H. C. / Grenville, A. / SPIE et al. | 2003
- 1631
-
Accelerated damage to blank and antireflectance-coated CaF2 surfaces under 157-nm laser irradiationLiberman, Vladimir / Rothschild, Mordechai / Palmacci, Stephen T. / Efremow, Nikolay N. / Sedlacek, Jan H. C. / Grenville, Andrew et al. | 2003
- 1639
-
Compaction and rarefaction of fused silica with 193-nm excimer laser exposure [5040-173]Algots, J. M. / Sandstrom, R. / Partlo, W. N. / Maroevic, P. / Eva, E. / Gerhard, M. / Linder, R. / Stietz, F. / SPIE et al. | 2003
- 1639
-
Compaction and rarefaction of fused silica with 193-nm excimer laser exposureAlgots, J. Martin / Sandstrom, Richard / Partlo, William N. / Maroevic, Petar / Eva, Eric / Gerhard, Michael / Linder, Ralf / Stietz, Frank et al. | 2003
- 1651
-
193-nm detector nonlinearity measurement system at NISTYang, Shao / Keenan, Darryl A. / Laabs, Holger / Dowell, Marla L. et al. | 2003
- 1651
-
193-nm detector nonlinearity measurement system at NIST [5040-174]Yang, S. / Keenan, D. A. / Laabs, H. / Dowell, M. L. / SPIE et al. | 2003
- 1657
-
New lens barrel structure utilized on the FPA-6000AS4 and its contribution to the lens performanceSudoh, Yuji / Kanda, Tsuneo et al. | 2003
- 1657
-
New lens barrel structure utilized on the FPA-6000AS4 and its contribution to the lens performance [5040-175]Sudoh, Y. / Kanda, T. / SPIE et al. | 2003
- 1665
-
Excimer lasers for superhigh NA 193-nm lithography [5040-177]Paetzel, R. / Albrecht, H. S. / Lokai, P. / Zschocke, W. / Schmidt, T. / Bragin, I. / Schroeder, T. / Reusch, C. / Spratte, S. / SPIE et al. | 2003
- 1665
-
Excimer lasers for superhigh NA 193-nm lithographyPaetzel, Rainer / Albrecht, Hans S. / Lokai, Peter / Zschocke, Wolfgang / Schmidt, Thomas / Bragin, Igor / Schroeder, Thomas / Reusch, Christian / Spratte, Stefan et al. | 2003
- 1672
-
Stage accuracy results using interferometers compensated for refractivity fluctuations [5040-178]Henshaw, P. D. / Trepagnier, P. C. / Dillon, R. F. / Pril, W. / Hultermans, B. / SPIE et al. | 2003
- 1672
-
Stage accuracy results using interferometers compensated for refractivity fluctuationsHenshaw, Philip D. / Trepagnier, Pierre C. / Dillon, Robert F. / Pril, Wouter / Hultermans, Bas et al. | 2003
- 1682
-
High-performance beam stabilization for next-generation ArF beam delivery systems [5040-180]Lublin, L. / Warkentin, D. / Das, P. P. / Ershov, A. I. / Vipperman, J. / Spangler, R. L. / Klene, B. / SPIE et al. | 2003
- 1682
-
High-performance beam stabilization for next-generation ArF scanner systemsLublin, Leonard / Warkentin, David / Das, Palash P. / Ershov, Alexander I. / Vipperman, Jody / Spangler, Ronald L. / Klene, Brian et al. | 2003
- 1694
-
Dual-chamber ultra line-narrowed excimer light source for 193-nm lithography [5040-181]Fleurov, V. B. / Colon, D. J. / Brown, D. J. W. / O Keeffe, P. / Besaucele, H. / Ershov, A. I. / Trintchouk, F. / Ishihara, T. / Zambon, P. / Rafac, R. J. et al. | 2003
- 1694
-
Dual-chamber ultra line-narrowed excimer light source for 193-nm lithographyFleurov, Vladimir B. / Colon, Daniel J. / Brown, Daniel J. W. / O'Keeffe, Patrick / Besaucele, Herve / Ershov, Alexander I. / Trintchouk, Fedor / Ishihara, T. / Zambon, Paolo / Rafac, R. J. et al. | 2003
- 1704
-
Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography generation [5040-182]Saito, T. / Suzuki, T. / Yoshino, M. / Wakabayashi, O. / Matsunaga, T. / Fujimoto, J. / Kakizaki, K. / Yamazaki, T. / Inoue, T. / Terashima, K. et al. | 2003
- 1704
-
Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography generationSaito, Takashi / Suzuki, Toru / Yoshino, Masaya / Wakabayashi, Osamu / Matsunaga, Takashi / Fujimoto, Junichi / Kakizaki, Kouji / Yamazaki, Taku / Inoue, Toyoharu / Terashima, Katsutomo et al. | 2003
- 1712
-
New concerns with the design of filters for the protection of lithography opticsDallas, Andrew J. / Ding, William / Hoang, Brian / Joriman, Jon / Parsons, Jonathan G. / Seguin, Kevin et al. | 2003
- 1712
-
New concerns with the design of filters for the protection of lithography optics [5040-183]Dallas, A. J. / Ding, W. / Hoang, B. / Joriman, J. / Parsons, J. G. / Seguin, K. / SPIE et al. | 2003
- 1729
-
Outlier rejection with mixture models in alignment [5040-184]Nakajima, S. / Kanaya, Y. / Li, M. / Sugihara, T. / Sukegawa, A. / Magome, N. / SPIE et al. | 2003
- 1729
-
Outlier rejection with mixture models in alignmentNakajima, Shinichi / Kanaya, Yuho / Li, Mengling / Sugihara, Taro / Sukegawa, Ayako / Magome, Nobutaka et al. | 2003
- 1742
-
Measurement of the refractive index and thermo-optic coefficient of water near 193 nm [5040-188]Burnett, J. H. / Kaplan, S. / SPIE et al. | 2003
- 1742
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Measurement of the refractive index and thermo-optic coefficient of water near 193 nmBurnett, John H. / Kaplan, Simon et al. | 2003
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Deep-UV liquid immersion mastering of high-density optical discs [5040-192]van Santen, H. / Neijzen, J. H. M. / SPIE et al. | 2003
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Deep-UV liquid immersion mastering of high-density optical discsvan Santen, Helmar / Neijzen, Jaap H. M. et al. | 2003