Low-capacitance photoconductive detectors for extremely low optical power fabricated by focused ion-beam doping and overgrowth (Englisch)
- Neue Suche nach: Vitzethum, Markus
- Neue Suche nach: Ruff, Martin
- Neue Suche nach: Schmidt, Ralf
- Neue Suche nach: Kiesel, Peter
- Neue Suche nach: Malzer, S.
- Neue Suche nach: Koch, Joerg
- Neue Suche nach: Wieck, Andreas
- Neue Suche nach: Doehler, Gottfried H.
- Neue Suche nach: Vitzethum, Markus
- Neue Suche nach: Ruff, Martin
- Neue Suche nach: Schmidt, Ralf
- Neue Suche nach: Kiesel, Peter
- Neue Suche nach: Malzer, S.
- Neue Suche nach: Koch, Joerg
- Neue Suche nach: Wieck, Andreas
- Neue Suche nach: Doehler, Gottfried H.
In:
Proc. SPIE
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4288
; 56
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2001
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Low-capacitance photoconductive detectors for extremely low optical power fabricated by focused ion-beam doping and overgrowth
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Beteiligte:Vitzethum, Markus ( Autor:in ) / Ruff, Martin ( Autor:in ) / Schmidt, Ralf ( Autor:in ) / Kiesel, Peter ( Autor:in ) / Malzer, S. ( Autor:in ) / Koch, Joerg ( Autor:in ) / Wieck, Andreas ( Autor:in ) / Doehler, Gottfried H. ( Autor:in )
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Kongress:Photodetectors: Materials and Devices VI ; 2001 ; San Jose,CA,United States
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Erschienen in:Proc. SPIE ; 4288 ; 56
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:12.06.2001
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Recent developments in biologically inspired seeker technology (Invited Paper) [4288-01]McCarley, P. L. / Massie, M. A. / SPIE et al. | 2001
- 1
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Recent developments in biologically inspired seeker technologyMcCarley, Paul L. / Massie, Mark A. et al. | 2001
- 13
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InP/InGaAs-based hi-lo avalanche photodetectors for high-speed optical communications (Invited Paper) [4288-04]Park, C.-Y. / Kang, S.-G. / Yun, I. / Hyun, K.-S. / Choo, H.-R. / Lee, E.-H. / SPIE et al. | 2001
- 13
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InP/InGaAs-based hi-lo avalanche photodetectors for high-speed optical communicationsPark, Chan-Yong / Kang, Seung-Goo / Yun, Ilgu / Hyun, Kyung-Sook / Choo, Heung-Ro / Lee, El-Hang et al. | 2001
- 21
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Theoretical approach to frequency response of resonant-cavity avalanche photodiodesXiao, Yegao / Deen, M. Jamal et al. | 2001
- 21
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Theoretical approach to frequency response of resonant-cavity avalanche photodiodes [4288-53]Xiao, Y. G. / Deen, M. J. / SPIE et al. | 2001
- 31
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Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode [4288-06]Haralson, J. N. / Brennan, K. F. / SPIE et al. | 2001
- 31
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Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiodeHaralson, Joe N. / Brennan, Kevin F. et al. | 2001
- 39
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Avalanche multiplication noise in bulk and thin Ai~xGa~1~-~xAs (x=0-0.8) PIN and NIP diodes [4288-07]Ng, B. K. / David, J. P. R. / Tan, C. H. / Plimmer, S. A. / Rees, G. J. / Tozer, R. C. / Hopkinson, M. / SPIE et al. | 2001
- 39
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Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodesNg, Beng K. / David, John P. R. / Tan, Chee H. / Plimmer, S. A. / Rees, Graham J. / Tozer, Richard C. / Hopkinson, Mark et al. | 2001
- 47
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Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors (Invited Paper) [4288-08]Tan, H. H. / Fu, L. / Carmody, C. Y. / Jagadish, C. / SPIE et al. | 2001
- 47
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Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectorsTan, Hark H. / Fu, L. / Carmody, C. Y. / Jagadish, Chennupati et al. | 2001
- 56
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Low-capacitance photoconductive detectors for extremely low optical power fabricated by focused ion-beam doping and overgrowth [4288-09]Vitzethum, M. / Ruff, M. / Schmidt, R. / Kiesel, P. / Malzer, S. / Koch, J. / Wieck, A. / Dohler, G. H. / SPIE et al. | 2001
- 56
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Low-capacitance photoconductive detectors for extremely low optical power fabricated by focused ion-beam doping and overgrowthVitzethum, Markus / Ruff, Martin / Schmidt, Ralf / Kiesel, Peter / Malzer, S. / Koch, Joerg / Wieck, Andreas / Doehler, Gottfried H. et al. | 2001
- 67
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High-speed low-energy photoconductive receiver with high gain [4288-10]Welker, M. / Zipperer, D. / Malzer, S. / Windisch, R. / Heremans, P. L. / Dohler, G. H. / SPIE et al. | 2001
- 67
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High-speed low-energy photoconductive receiver with high gainWelker, Merlin / Zipperer, D. / Malzer, S. / Windisch, Reiner / Heremans, Paul L. / Doehler, Gottfried H. et al. | 2001
- 77
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InGaAs on GaAs extended wavelength linear detector arraysZimmermann, Lars / John, Joachim / de Weerd, Martijn / Slaman, Martin / Nemeth, Stefan / Merken, Patrick / Borghs, Staf / Van Hoof, Chris A. et al. | 2001
- 77
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InGaAs on GaAs extended wavelength linear detector arrays [4288-11]Zimmermann, L. / John, J. / de Weerd, M. / Slaman, M. / Nemeth, S. / Merken, P. / Borghs, S. / Van Hoof, C. A. / SPIE et al. | 2001
- 85
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Time-domain modeling of InP/InGaAs avalanche photodiodesXiao, Yegao / Deen, M. Jamal et al. | 2001
- 85
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Time-domain modeling of InP/InGaAs avalanche photodiodes [4288-43]Xiao, Y. G. / Deen, M. J. / SPIE et al. | 2001
- 94
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Process development of fast and sensitive polySiGe microbolometer arrays (Invited Paper) [4288-12]De Moor, P. / Kavadias, S. / Leonov, V. N. / Van Hoof, C. A. / SPIE et al. | 2001
- 94
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Process development of fast and sensitive polySiGe microbolometer arraysDe Moor, Piet / Kavadias, Spyros / Leonov, Vladimir N. / Van Hoof, Chris A. et al. | 2001
- 100
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Uncooled infrared detector technology from research to production within six months (Invited Paper) [4288-13]Chatard, J.-P. / Tribolet, P. M. / SPIE et al. | 2001
- 100
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Uncooled infrared detector technology from research to production within six monthsChatard, Jean-Pierre / Tribolet, Philippe M. et al. | 2001
- 112
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Uncooled microbolometer infrared focal plane array in standard CMOS [4288-14]Tezcan, D. S. / Eminoglu, S. / Akar, O. S. / Akin, T. / SPIE et al. | 2001
- 112
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Uncooled microbolometer infrared focal plane array in standard CMOSTezcan, Deniz S. / Eminoglu, Selim / Akar, Orhan S. / Akin, Tayfun et al. | 2001
- 122
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Novel macroporous silicon structures as light emission and sensor elementsKarachevtseva, Lyudmila A. et al. | 2001
- 122
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Novel macroporous silicon structures as light emission and sensor elements [4288-15]Karachevtseva, L. A. / SPIE et al. | 2001
- 130
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Quantum well infrared detection devicesLiu, Hui C. / Song, Chunying / Shen, Aidong / Dudek, Richard / Gao, Ming / Dupont, Emmanuel / Wasilewski, Zbigniew R. / Buchanan, Margaret / Wilson, P. H. / Robinson, Brad J. et al. | 2001
- 130
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Quantum well infrared detection devices (Invited Paper) [4288-16]Liu, H. C. / Song, C. Y. / Shen, A. / Dudek, R. / Gao, M. / Dupont, E. / Wasilewski, Z. R. / Buchanan, M. / Wilson, P. H. / Robinson, B. J. et al. | 2001
- 141
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Quantum dot intersubband photodetectors (Invited Paper) [4288-17]Jelen, C. L. / Erdtmann, M. / Kim, S. / Razeghi, M. / SPIE et al. | 2001
- 141
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Quantum dot intersubband photodetectorsJelen, Christopher L. / Erdtmann, Matthew / Kim, Seongsin / Razeghi, Manijeh et al. | 2001
- 151
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Investigation of supperlattice infrared photodetectors to reach the background-limited performance at high temperatureKuan, Chieh-Hsiung / Hsieh, Wen-Hsing / Lin, Shih-Yan / Chen, Chun-Chi / Chen, Jen-Ming et al. | 2001
- 151
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Investigation of supperlattice infrared photodetectors to reach the background-limited performance at high temperature [4288-19]Kuan, C.-H. / Hsieh, W.-H. / Lin, S.-Y. / Chen, C.-C. / Chen, J.-M. / SPIE et al. | 2001
- 163
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Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrateErdtmann, Matthew / Razeghi, Manijeh et al. | 2001
- 163
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Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate [4288-42]Erdtmann, M. / Razeghi, M. / SPIE et al. | 2001
- 171
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Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials familyFuchs, Frank / Buerkle, L. / Hamid, R. / Herres, N. / Pletschen, Wilfried / Sah, R. E. / Kiefer, Rudolf / Schmitz, J. et al. | 2001
- 171
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Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family (Invited Paper) [4288-20]Fuchs, F. / Burkle, L. / Hamid, R. / Herres, N. / Pletschen, W. / Sah, R. E. / Kiefer, R. / Schmitz, J. / SPIE et al. | 2001
- 183
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Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectorsAnselm, K. Alex / Ren, Hongwen / Vilela, Mauro / Zheng, Jun / Lin, C.H. T. / Nathan, Vaidya / Brown, Gail J. et al. | 2001
- 183
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Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors [4288-21]Anselm, K. A. / Ren, H. / Vilela, M. / Zheng, J. / Lin, C. H. / Nathan, V. / Brown, G. J. / SPIE et al. | 2001
- 191
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High-performance type-II InAs/GaSb superlattice photodiodes [4288-22]Mohseni, H. / Wei, Y. / Razeghi, M. / SPIE et al. | 2001
- 191
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High-performance type-II InAs/GaSb superlattice photodiodesMohseni, Hooman / Wei, Yajun / Razeghi, Manijeh et al. | 2001
- 200
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InAs/InGaSb superlattices for very long wavelength infrared detectionBrown, Gail J. / Szmulowicz, Frank et al. | 2001
- 200
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InAs/InGaSb superlattices for very long wavelength infrared detection [4288-23]Brown, G. J. / Szmulowicz, F. / SPIE et al. | 2001
- 209
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GaN deep-level capture barriersJohnstone, Daniel K. / Ahoujja, Mohamad / Yeo, YungKee / Guido, Louis J. et al. | 2001
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GaN deep-level capture barriers (Invited Paper) [4288-24]Johnstone, D. K. / Ahoujja, M. / Yeo, Y. K. / Guido, L. J. / SPIE et al. | 2001
- 219
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Al~xGa~1~-~xN materials and device technology for solar blind ultraviolet photodetector applications [4288-25]McClintock, R. / Sandvik, P. M. / Mi, K. / Shahedipour, F. / Yasan, A. / Jelen, C. L. / Kung, P. / Razeghi, M. / SPIE et al. | 2001
- 219
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AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applicationsMcClintock, Ryan / Sandvik, Peter M. / Mi, Kan / Shahedipour, Fatemeh / Yasan, Alireza / Jelen, Christopher L. / Kung, Patrick / Razeghi, Manijeh et al. | 2001
- 230
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AlGaN Schottky diodes for short-wavelength UV applicationsChow, Peter P. / Klaassen, Jody J. / Vest, Robert E. / Van Hove, James M. / Wowchak, Andrew M. / Polley, Christina et al. | 2001
- 230
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AlGaN Schottky diodes for short-wavelength UV applications [4288-26]Chow, P. P. / Klaassen, J. J. / Vest, R. E. / VanHove, J. M. / Wowchak, A. M. / Polley, C. / SPIE et al. | 2001
- 238
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Optical investigation of InGaAsN structures for photodetector applications [4288-27]Heroux, J. B. / Yang, X. / Turk, B. / Wang, W. I. / SPIE et al. | 2001
- 238
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Optical investigation of InGaAsN structures for photodetector applicationsHeroux, Jean B. / Yang, Xiaoping / Turk, B. / Wang, Wen I. et al. | 2001
- 246
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Progress in the fabrication of GaN photocathodes [4288-50]Ulmer, M. P. / Wessels, B. W. / Shahedipour, F. / Korotkov, R. Y. / Joseph, C. L. / Nihashi, T. / SPIE et al. | 2001
- 246
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Progress in the fabrication of GaN photocathodesUlmer, Melville P. / Wessels, Bruce W. / Shahedipour, Fatemeh / Korotokov, Roman Y. / Joseph, Charles L. / Nihashi, Tokuaki et al. | 2001
- 254
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Fundamental physics of infrared detector materialsKinch, Michael A. et al. | 2001
- 254
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Fundamental physics of infrared detector materials (Invited Paper) [4288-28]Kinch, M. A. / SPIE et al. | 2001
- 266
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HgCdTe photodiodes for IR detection: a reviewReine, Marion B. et al. | 2001
- 266
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HgCdTe photodiodes for IR detection: a review (Invited Paper) [4288-29]Reine, M. B. / SPIE et al. | 2001
- 278
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Large-format long-wavelength GaAs/AlGaAs multiquantum well infrared detector arrays for astronomy (Invited Paper) [4288-31]Gunapala, S. D. / Bandara, S. V. / Bock, J. J. / Ressler, M. E. / Liu, J. K. / Mumolo, J. M. / Rafol, S. B. / Ting, D. / Werner, M. W. / SPIE et al. | 2001
- 278
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Large-format long-wavelength GaAs/AlGaAs multiquantum well infrared detector arrays for astronomyGunapala, Sarath D. / Bandara, Sumith V. / Bock, James J. / Ressler, Michael E. / Liu, John K. / Mumolo, Jason M. / Rafol, S. B. / Ting, David Z. / Werner, Michael W. et al. | 2001
- 286
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Silicon infrared focal plane arraysKimata, Masafumi / Yagi, Hirofumi / Ueno, Masashi / Nakanishi, Junji / Ishikawa, Tomohiro / Nakaki, Yoshiyuki / Kawai, Makoto / Endo, Kazuyo / Kosasayama, Yasuhiro / Ohota, Yasuaki et al. | 2001
- 286
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Silicon infrared focal plane arrays (Invited Paper) [4288-32]Kimata, M. / Yagi, H. / Ueno, M. / Nakanishi, J. / Ishikawa, T. / Nakaki, Y. / Kawai, M. / Endo, K. / Kosasayama, Y. / Ohota, Y. et al. | 2001
- 298
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Uncooled infrared imaging using thin film ferroelectrics (Invited Paper) [4288-33]Hanson, C. M. / Beratan, H. R. / Belcher, J. F. / SPIE et al. | 2001
- 298
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Uncooled infrared imaging using thin film ferroelectricsHanson, Charles M. / Beratan, Howard R. / Belcher, James F. et al. | 2001
- 304
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Novel Sb-based alloy for uncooled infrared photodetector applications (Invited Paper) [4288-03]Razeghi, M. / SPIE et al. | 2001
- 304
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Novel Sb-based alloy for uncooled infrared photodetector applicationsRazeghi, Manijeh et al. | 2001
- 316
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HgCdTe photodiodes with state-of-the-art performance in the near-infrared spectral region [4288-35]Vydyanath, H. R. / Tobin, S. P. / Norton, P. W. / Odette, P. / Nathan, V. / SPIE et al. | 2001
- 316
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HgCdTe photodiodes with state-of-the-art performance in the near- infrared spectral regionVydyanath, Honnavalli R. / Tobin, Stephen P. / Norton, Peter W. / Odette, P. / Nathan, Vaidya et al. | 2001
- 335
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Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodesWenus, Jakub / Rutkowski, Jaroslaw / Rogalski, Antoni et al. | 2001
- 335
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Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes [4288-36]Wenus, J. / Rutkowski, J. / Rogalski, A. / SPIE et al. | 2001
- 345
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Properties of 2x64 linear HgCdTe MBE-grown LWIR arrays with CCD silicon readoutsSizov, Fiodor F. / Vasil'ev, Vladimir / Esaev, Dmitrii G. / Ovsyuk, Victor N. / Sidorov, Yuri G. / Reva, Vladimir P. / Derkach, Yurii P. / Golenkov, Alexandr G. / Gumenjuk-Sichevskaya, Joanna V. et al. | 2001
- 345
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Properties of 2x64 linear HgCdTe MBE-grown LWIR arrays with CCD silicon readouts [4288-37]Sizov, F. F. / Vasil ev, V. / Esaev, D. G. / Ovsyuk, V. N. / Sidorov, Y. G. / Reva, V. P. / Derkach, Y. P. / Golenkov, A. G. / Gumenjuk-Sychevskaya, J. V. / SPIE et al. | 2001
- 354
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HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxy [4288-44]Gawron, W. / Adamiec, K. / Rogalski, A. / SPIE et al. | 2001
- 354
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HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxyGawron, Waldemar / Adamiec, Krzysztof / Rogalski, Antoni et al. | 2001
- 362
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Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers [4288-38]Guha, S. / Blackshire, J. L. / Zakel, A. / Krishnamurthy, S. / SPIE et al. | 2001
- 362
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Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafersGuha, Shekhar / Blackshire, James L. / Zakel, Andrew / Krishnamurthy, Srinivasan et al. | 2001
- 371
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Heterojunction interfacial workfunction detectors for far-infrared applications [4288-39]Perera, A. G. U. / Matsik, S. G. / Letov, V. Y. / Liu, H. C. / Shen, A. / Gao, M. / Wasilewski, Z. R. / Buchanan, M. / Rolfe, S. J. / SPIE et al. | 2001
- 371
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Heterojunction interfacial workfunction detectors for far-infrared applicationsPerera, A. G. Unil / Matsik, S. G. / Letov, Viatcheslav Y. / Liu, Hui C. / Shen, Aidong / Gao, Ming / Wasilewski, Zbigniew R. / Buchanan, Margaret / Rolfe, S. J. et al. | 2001
- 379
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Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: a comparative studyRehm, Robert / Schneider, Harald / Schwarz, K. / Walther, Martin / Koidl, Peter / Weimann, Guenter et al. | 2001
- 379
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Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: a comparative study [4288-40]Rehm, R. / Schneider, H. / Schwarz, K. / Walther, M. / Koidl, P. / Weimann, G. / SPIE et al. | 2001
- 386
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Improvement of low-temperature sensing realized with a superlattice infrared photodetectorChen, Chun-Chi / Hsu, Mao-Chieh / Hsieh, Wen-Hsing / Kuan, Chieh-Hsiung et al. | 2001
- 386
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Improvement of low-temperature sensing realized with a superlattice infrared photodetector [4288-41]Chen, C.-C. / Hsu, M. C. / Hsieh, W.-H. / Kuan, C.-H. / SPIE et al. | 2001
- 396
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Why QDIPs are still inferior to QWIPs: theoretical analysis [4288-55]Ryzhii, V. / Khmyrova, I. / Ryzhii, M. / Pipa, V. I. / Mitin, V. V. / Willander, M. / SPIE et al. | 2001
- 396
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Why QDIPs are still inferior to QWIPs: theoretical analysisRyzhii, Victor / Khmyrova, Irina / Ryzhii, Maxim / Pipa, Victor I. / Mitin, Vladimir V. / Willander, Magnus et al. | 2001
- 404
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Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approach [4288-46]Bhatnagar, P. K. / Gupta, P. / Singh, L. / SPIE et al. | 2001
- 404
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Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approachBhatnagar, Promod K. / Gupta, Poonam / Singh, Laxman et al. | 2001
- 414
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Bragg reflector for GaAs solar cells on Ge substrate [4288-47]Chen, W. / Qiao, Z. / Sun, Q. / Du, F. / Xiao, Z. / Xu, J. / SPIE et al. | 2001
- 414
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Bragg reflector for GaAs solar cells on Ge substrateChen, Wenjun / Qiao, Zaixiang / Sun, Qiang / Du, Fusheng / Xiao, Zhibin / Xu, Jun et al. | 2001
- 422
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Detectivity of thin film NTC infrared sensorsLee, Moon-Ho / Yoo, Mina / Bae, Seong-Ho / Shin, Hyun-Jin et al. | 2001
- 422
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Detectivity of thin film NTC infrared sensors [4288-48]Lee, M. / Yoo, M. / Bae, S. / Shin, H. / SPIE et al. | 2001
- 430
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Optical fiber video transmission system [4288-49]Zisu, T. / Miclos, S. / SPIE et al. | 2001
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Optical fiber video transmission systemZisu, Tudor / Miclos, Sorin et al. | 2001