Tantalum And Niobium Silicides Formed By Scanning Electron Beam (Englisch)
- Neue Suche nach: Guobing, Zhan
- Neue Suche nach: yangyuan, Wang
- Neue Suche nach: shi-Chang, Lin
- Neue Suche nach: sheng, Zhang y.
- Neue Suche nach: lin, Fan b.
- Neue Suche nach: Guobing, Zhan
- Neue Suche nach: yangyuan, Wang
- Neue Suche nach: shi-Chang, Lin
- Neue Suche nach: sheng, Zhang y.
- Neue Suche nach: lin, Fan b.
In:
Proc. SPIE
;
0623
; 248
;
1986
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Tantalum And Niobium Silicides Formed By Scanning Electron Beam
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Beteiligte:Guobing, Zhan ( Autor:in ) / yangyuan, Wang ( Autor:in ) / shi-Chang, Lin ( Autor:in ) / sheng, Zhang y. ( Autor:in ) / lin, Fan b. ( Autor:in )
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Kongress:Advanced Processing and Characterization of Semiconductors III ; 1986 ; Los Angeles,CA,United States
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Erschienen in:Proc. SPIE ; 0623 ; 248
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:26.06.1986
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
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Order-Disorder Transitions In Strained Semiconductor SystemsOurmazd, A. / Bean, J. C. et al. | 1986
- 8
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New Optical Characterization Methods Of Molecular Beam Epitaxy-Grown Multi-Quantum-Well Structures Using Tunable Light SourcesSong, J. J. / Yoon, Y. S. / Fedotowsky, A. / Naganuma, M. / Kim, Y. B. / Masselink, W. T. / Morkoo, H. / Vreeland, T. et al. | 1986
- 13
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Structural Characterization Of Defects In Gaas With Ultrasonic MeasurementsBrophy, M. J. / Granato, A. V. et al. | 1986
- 18
-
High Resolution Microstructural Studies Of Semiconductor MaterialsBravman, John C. et al. | 1986
- 26
-
A Raman Study Of The Dopant Distribution In Submicron Pn Junctions In B+Or BF2+Ion Implanted Siliconde Wilton, A. C. / Simard-Normandin, M. / Wong, P. T. T. et al. | 1986
- 36
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Spatially Resolved Photoluminescence Of GaAsHunter, A. T. et al. | 1986
- 40
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Study Of The Effects Of Strain In Indium-Doped Gallium Arsenide By Electroreflectance And PhotocapacitanceRaccah, Paul M. / Garland, J. W. / Zhang, Z. / Mioc, S. / De, Yang / Chu, Amy H. M. / McGuigan, S, / Thomas, R. N. et al. | 1986
- 45
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Electrical Characterization Of MIS InterfacesWager, J. F. et al. | 1986
- 50
-
Sheet Resistance Low Dose Monitoring Using The Double Implant TechniqueSmith, A. K. / Johnson, W. H. / Keenan, W. A. et al. | 1986
- 72
-
Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAsSporon-Fiedler, Frederik / Weber, Eicke R. et al. | 1986
- 78
-
An FTIR And RGA Study Of The Outgassing Of Photoresist During Ion ImplantMehrotra, Bhola N. / Larson, Lawrence A. et al. | 1986
- 83
-
Characterization Of Electron Traps Resulting From Oxygen Precipitation In Cz SiliconWhitfield, J. / Varker, C. J. / Chan, S. S. / Wilson, S. R. / Carpenter, R. W. / Krause, S. J. / Weber, E. R. et al. | 1986
- 92
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Rapid Thermal Growth Of Thin Insulators On Si (Invited)Moslehi, Mehrdad M. / Saraswat, Krishna C. / Shatas, Steven C. et al. | 1986
- 115
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Characteristics Of Rapidly Grown Thin OxidesMehta, S. / Russo, C. J. / Hodul, D. et al. | 1986
- 119
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Increasing The Conductivity Of Polycrystalline Silicon By Rapid Thermal Processing Before And After Ion ImplantationGregory, R. B. / Wilson, S. R. / Paulson, W. M. / Krause, S. J. / Leavitt, J. A. / McIntyre, L. C. / Seerveld, J. L. / Stoss, P. et al. | 1986
- 127
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Pulsed Laser Processing Of Silicon Via Absorption By Free CarriersJames, R. B. et al. | 1986
- 133
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Temperature Uniformity Measurement Techniques For Rapid Thermal ProcessingRusso, Carl et al. | 1986
- 144
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Proton Bombarded Gallium Arsenide: Opto-Electronic EffectsZavada, J. M. / Jenkinson, H. A. / Larson, D. C. et al. | 1986
- 149
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Rapid Thermal Annealing And Solid Phase Epitaxy Of Ion Implanted InPBahir, G. / Merz, J. L. / Abelson, J. R. / Sigmon, T. W. et al. | 1986
- 157
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Heating Of GaAs And InP By Incoherent RadiationBlock, Thomas R. / Farley, Craig W. / Kim, Tae S. / Lester, Steve D. / Streetman, Ben G. et al. | 1986
- 163
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The Effects Of Rapid Thermal Annealing On Si-Implanted GaAsLegge, R. N. / Paulson, W. M. et al. | 1986
- 172
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Epitaxial Growth On SIMOX WafersLam, Hon W. et al. | 1986
- 175
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Silicon-On-Insulator Technology By Heteroepitaxial Growth Of FluoridesFarrow, Robin F. C. et al. | 1986
- 183
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Recent Progress In Epitaxial Growth Of Semiconducting Materials On Stabilized Zirconia Single Crystals.Mercandalli, L. M. / Dieumegard, D. / Croset, M. / Siejka, J. et al. | 1986
- 211
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Silicon-On-Insulator Technology By Crystallization On Quartz SubstratesBaumgart, H. et al. | 1986
- 224
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Epitaxial Overgrowth Of Si On SiO2SurfaceYue, A. S. / Oh, S. W. / Rhee, S. S. et al. | 1986
- 230
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Properties And Applications Of Molecular Beam Epitaxial SilicidesWang, K. L. et al. | 1986
- 237
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Structure And Electrical Properties Of Metal-GaAs InterfacesLiliental-Weber, Z. et al. | 1986
- 244
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Rapid Thermal Annealing Of Sputtered Niobium Silicide Thin FilmsChow, T. P. / Hodul, D. / Powell, R. A. et al. | 1986
- 248
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Tantalum And Niobium Silicides Formed By Scanning Electron BeamGuobing, Zhan / yangyuan, Wang / shi-Chang, Lin / sheng, Zhang y. / lin, Fan b. et al. | 1986
- 255
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Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial OxideZhao, X.-A . / Banwell, T. C. / Nicolet, M-A . et al. | 1986
- 261
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Effect Of Added Si On The Resistivity Of Co And Ni FilmsKim, S.-J. / Cheng, Y.-T. / Nicolet, M-A. et al. | 1986