Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes (Englisch)
- Neue Suche nach: Pendse, D. R.
- Neue Suche nach: Chin, Aland K.
- Neue Suche nach: Dabkowski, Ferdynand P.
- Neue Suche nach: Clausen, Edward M.
- Neue Suche nach: Pendse, D. R.
- Neue Suche nach: Chin, Aland K.
- Neue Suche nach: Dabkowski, Ferdynand P.
- Neue Suche nach: Clausen, Edward M.
In:
Proc. SPIE
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3547
; 79
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1998
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes
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Beteiligte:Pendse, D. R. ( Autor:in ) / Chin, Aland K. ( Autor:in ) / Dabkowski, Ferdynand P. ( Autor:in ) / Clausen, Edward M. ( Autor:in )
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Kongress:Semiconductor Lasers III ; 1998 ; Beijing,China
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Erschienen in:Proc. SPIE ; 3547 ; 79
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:19.08.1998
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ISBN:
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ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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1.55-μm InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communicationLuo, Yi / Wen, Guo-Peng / Sun, Changzheng / Li, TongNing / Yang, Xin-Min / Wang, Ren-Fan / Wang, Cai-Lin / Jin, Jin-Yan et al. | 1998
- 1
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1.55-m InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication (Invited Paper) [3547-01]Luo, Y. / Wen, G.-P. / Sun, C.-Z. / Li, T.-N. / SPIE et al. | 1998
- 4
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Characteristics of 1.55-μm gain-switched DFB laser diodeWang, Yuncai / Chen, Guofu / Wang, Xianhua et al. | 1998
- 4
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Characteristics of 1.55-m gain-switched DFB laser diode [3547-02]Wang, Y. / Chen, G. / Wang, X. / SPIE et al. | 1998
- 8
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High-performance 155-μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth methodMa, Xiaoyu / Cao, Qing / Wang, Shutang / Guo, Liang / Wang, Zhongming / Wang, Liming / He, Guangping / Yang, Yali / Zhang, Hongqin / Zhou, Xiuning et al. | 1998
- 8
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High-performance 155-m InGaAsP/InP strained-layer quantum well laser diodes fabricated by MOCVD overgrowth method [3547-03]Ma, X. / Cao, Q. / Wang, S. / Guo, L. / SPIE et al. | 1998
- 12
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1.3-m InGaAsP/InP strained-layer multiple quantum well complex-coupled distributed feedback laser [3547-04]Chen, B. / Wang, W. / Wang, X. / Zhang, J. / SPIE et al. | 1998
- 12
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1.3-μm InGaAsP/InP strained-layer multiquantum well complex-coupled distributed feedback laserChen, Bo / Wang, Wei / Wang, Xiaojie / Zhang, Jingyuan / Zhu, Hongliang / Zhou, Fan et al. | 1998
- 16
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Dynamic analysis on external optical-feedback-resistant characteristics in partially corrugated waveguide laser diodesHuang, Yidong / Okuda, Tetsuro / Shiba, Kazuhiro / Torikai, Toshitaka et al. | 1998
- 16
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Dynamic analysis on external optical feedback resistant characteristics in partially corrugated waveguide laser diodes [3547-42]Huang, Y. / Okuda, T. / Shiba, K. / Torikai, T. / SPIE et al. | 1998
- 24
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Very high power DFB cw light source at 1550 nm for high-performance supertrunking [3547-43]Chen, T. R. / Hsin, W. / SPIE et al. | 1998
- 24
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Very high power DFB CW light source at 1550 nm for high-performance supertrunkingChen, Tirong R. / Hsin, Wei et al. | 1998
- 37
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Laser/modulator module for analog fiber optic linksYu, Paul K. L. / Zhu, J. T. / Chen, Wei-Xi / Li, Guoliang / Welstand, Robert B. / Pappert, Stephen A. / Sun, Chen K. / Nguyen, Richard / Liu, Yet Zen et al. | 1998
- 37
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Laser/modulator module for analog fiber optic links (Invited Paper) [3547-44]Yu, P. K. L. / Zhu, J. T. / Chen, W. X. / Li, G. L. / SPIE et al. | 1998
- 45
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High-power BA Al-free InGaAsP/GaAs SCH SQW lasers (Invited Paper) [3547-05]Bo, B. / Gao, X. / Zhang, B. / Zhu, B. / SPIE et al. | 1998
- 45
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High-power BA Al-free InGaAsP/GaAs SCH SQW lasersBo, Baoxue / Gao, Xin / Zhang, Baoshun / Zhu, Baoren / Wang, Yuxia / Zhang, Xingde et al. | 1998
- 48
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Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor depositionYin, Tao / Lian, Peng / Xu, ZunTu / Chen, Changhua / Zhao, Hongdong / Zou, Deshu / Chen, Jianxing / Gao, Guo / Du, Jinyu / Tao, Changbao et al. | 1998
- 48
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Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metal-organic chemical vapor deposition (Invited Paper) [3547-06]Yin, T. / Lian, P. / Xu, Z. / Chen, C. / SPIE et al. | 1998
- 54
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High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusionXu, ZunTu / Yang, Guowen / Yin, Tao / Lian, Peng / Li, Bingchen / Zhang, Jingming / Gao, Guo / Xu, Junying / Chen, Lianhui / Shen, Guangdi et al. | 1998
- 54
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High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion [3547-07]Xu, Z. / Yang, G. / Yin, T. / Lian, P. / SPIE et al. | 1998
- 61
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808-nm high-power semiconductor laser arraysZhang, Baoshun / Qu, Yi / Gao, Xin / Bo, Baoxue / Zhang, Xingde et al. | 1998
- 61
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808-nm high-power semiconductor laser arrays [3547-08]Zhang, B. / Qu, Y. / Gao, X. / Bo, B. / SPIE et al. | 1998
- 64
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Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAsYang, Guowen / Xu, ZunTu / Xu, Junying / Ma, Xiaoyu / Zhang, Jingming / Chen, Lianhui et al. | 1998
- 64
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Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs [3547-09]Yang, G. / Xu, Z. / Xu, J. / Ma, X. / SPIE et al. | 1998
- 71
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Q-CW laser diode driveRen, Qingyi / Shao, Yingbin / Chen, Min / Cao, Kefeng et al. | 1998
- 71
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Q-cw laser diode drive [3547-10]Ren, Q. / Shao, Y. / Chen, M. / Cao, K. / SPIE et al. | 1998
- 75
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808-nm semiconductor laser Ohmic-contact technology [3547-11]Wang, Y. / Zhang, B. / Wang, L. / Ren, D. / SPIE et al. | 1998
- 75
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808-nm semiconductor laser Ohmic-contact technologyWang, Yuxia / Zhang, Baoshun / Wang, Ling / Ren, Dacui / Zhang, Xingde et al. | 1998
- 79
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Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodesPendse, D. R. / Chin, Aland K. / Dabkowski, Ferdynand P. / Clausen, Edward M. et al. | 1998
- 79
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Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes (Invited Paper) [3547-47]Pendse, D. R. / Chin, A. K. / Dabkowski, F. P. / Clausen, E. M. / SPIE et al. | 1998
- 86
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Ultrahigh-power semiconductor lasers and their applications (Invited Paper) [3547-48]He, X. / Srinivasan, S. T. / Gupta, S. / Patel, R. M. / SPIE et al. | 1998
- 86
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Ultrahigh-power semiconductor lasers and their applicationsHe, Xiaoguang / Srinivasan, Swaminathan T. / Gupta, Shantanu / Patel, Rushikesh M. et al. | 1998
- 102
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Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasersWang, Lijun / Wu, Sheng Li / Liu, Yun / Ning, Yongqiang / Diaz, Jacqueline E. / Eliashevich, Ivan / Yi, Hyuk J. / Razeghi, Manijeh et al. | 1998
- 102
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980-nm GaInAs/GaAs/GaInP QW high-power lasers [3547-12]Wang, L. / Wu, S. / Liu, Y. / Ning, Y. / SPIE et al. | 1998
- 105
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Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasersBo, Baoxue / Zhang, Baoshun / Gao, Xin / Wang, Ling / Yang, Lixia / Zhang, Xingde et al. | 1998
- 105
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Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers [3547-13]Bo, B. / Zhang, B. / Gao, X. / Wang, L. / SPIE et al. | 1998
- 108
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808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPEGao, Xin / Bo, Baoxue / Qu, Yi / Zhang, Baoshun / Wang, Ling / Wang, Yuxia / Yang, Lixia / Song, Xiaowei / Zhang, Xingde et al. | 1998
- 108
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808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE [3547-14]Gao, X. / Bo, B. / Qu, Y. / Zhang, B. / SPIE et al. | 1998
- 111
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Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode: calculation and analyses [3547-15]Li, H. / Shi, J. / Jin, E. / SPIE et al. | 1998
- 111
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Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode: calculation and analysesLi, Hongyan / Li, Hong / Shi, Jiawei / Jin, Enshun / Gao, Dingsan et al. | 1998
- 118
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Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPEGao, Xin / Bo, Baoxue / Qu, Yi / Zhang, Baoshun / Wang, Yuxia / Wang, Ling / Yang, Lixia / Song, Xiaowei / Zhang, Xingde et al. | 1998
- 118
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Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPE [3547-16]Gao, X. / Bo, B. / Qu, Y. / Zhang, B. / SPIE et al. | 1998
- 121
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Visible vertical-cavity surface-emitting laser (Invited Paper) [3547-17]Cheng, P. / Ma, X. / Gao, J. / Kang, X. / SPIE et al. | 1998
- 121
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Visible vertical-cavity surface-emitting laserCheng, Peng / Ma, Xiaoyu / Gao, Junhua / Kang, Xuejun / Cao, Qing / Wang, Hongjie / Luo, Liping / Zhang, Chunhui / Lu, Xiuling / Lin, ShiMing et al. | 1998
- 127
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Single-mode 650-nm AlGaInP quantum well laser diodes for DVD (Invited Paper) [3547-18]Ma, X. / Cao, Q. / Wang, S. / Guo, L. / SPIE et al. | 1998
- 127
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Study of single-mode 650-nm AlGaInP quantum well laser diodes for DVDMa, Xiaoyu / Cao, Qing / Wang, Shutang / Guo, Liang / Wang, Liming / Yang, Yali / Zhang, Hongqin / Zhang, Xiaoyan / Chen, Lianhui et al. | 1998
- 130
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Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavitiesZhao, Hongdong / Shen, Guangdi / Yin, Tao / Chen, Changhua / Xu, ZunTu / Lian, Peng / Gao, Guo / Lin, ShiMing et al. | 1998
- 130
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Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities [3547-19]Zhao, H. / Shen, G. / Yin, T. / Chen, C. / SPIE et al. | 1998
- 136
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Enhancement of spontaneous emission factor in selectively oxidized vertical-cavity lasers with double oxide layersHuang, Yongzhen et al. | 1998
- 136
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Enhancement of spontaneous emission factor in selectively oxidized vertical-cavity lasers with double oxide layers [3547-20]Huang, Y.-Z. / SPIE et al. | 1998
- 144
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Cost-effective partially corrugated waveguide laser diodes for use in optical access networks (Invited Paper) [3547-64]Torikai, T. / Huang, Y. / Okuda, T. / SPIE et al. | 1998
- 144
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Cost-effective partially corrugated waveguide laser diodes for use in optical access networksTorikai, Toshitaka / Huang, Yidong / Okuda, Tetsuro et al. | 1998
- 152
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Optical-disk-mode pattern of InGaP microdisks emitting at 0.65 μmZhang, Bei-Wei / Xin, Yongchun / Wang, Guozhong / Xu, Wanjin / Xia, Zongju / Zou, YingHua et al. | 1998
- 152
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Optical-disk-mode pattern of InGaP microdisks emitting at 0.65 m [3547-21]Zhang, B. / Xin, Y. / Wang, G. / Xu, W. / SPIE et al. | 1998
- 158
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Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities [3547-22]Dai, L. / Zhang, B. / Mair, R. A. / Zeng, K. / SPIE et al. | 1998
- 158
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Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavitiesLun, Dai / Zhang, Bei-Wei / Mair, Robin A. / Zeng, Kecai / Lin, Jing Y. / Jiang, Hongxing / Botchkarev, Andrei / Kim, W. / Morkoc, Hadis / Khan, Muhammad A. et al. | 1998
- 164
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Microcavity effect and InGaAs/InGaAsP MQW microdisk laserNing, Yongqiang / Wu, Sheng Li / Wang, Lijun / Lin, Jiuling / Fu, Dehui / Liu, Yun / Wu, Dongjiang / Jin, Yixin et al. | 1998
- 164
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Microcavity effect and InGaAs/InGaAsP MQW microdisk laser [3547-23]Ning, Y. / Wu, S. / Wang, L. / Lin, J. / SPIE et al. | 1998
- 168
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Design of semiconductor microcavity emitters and detectors for optical memory and interconnect systemsLott, James A. et al. | 1998
- 168
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Design of semiconductor microcavity emitters and detectors for optical memory and interconnect systems [3547-50]Lott, I. A. / SPIE et al. | 1998
- 179
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Diffractive optical elements improve vertical-cavity surface-emitting laser beam qualityHuo, Junling / Zhang, JingJuan / Liao, Rui / Lin, ShiMing et al. | 1998
- 179
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Diffractive optical elements improve vertical-cavity surface-emitting laser beam quality [3547-24]Huo, J. / Zhang, J. / Liao, R. / Lin, S. / SPIE et al. | 1998
- 186
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Planar organic microcavity of rare-earth Tb complex film with metal mirrors [3547-25]Lin, Y. / Zhang, B. / Wang, G. / Sun, L. / SPIE et al. | 1998
- 186
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Planar organic microcavity of rare-earth Tb complex film with metal mirrorsLin, Yong / Zhang, Bei-Wei / Wang, Guozhong / Sun, Lu / Zhang, Shulin / Li, Xinzhang / Huang, Yanyi / Huang, Chunhui et al. | 1998
- 191
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Linewidth in microdisk laser [3547-26]Ning, Y. / Wu, S. / Wang, L. / Lin, J. / SPIE et al. | 1998
- 191
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Linewidth in microdisk laserNing, Yongqiang / Wu, Sheng Li / Wang, Lijun / Lin, Jiuling / Fu, Dehui / Liu, Yun / Wu, Dongjiang / Jin, Yixin et al. | 1998
- 194
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Frequency-stabilized tunable diode laser and strong transition iodine hyperfine spectra at 633 nmChen, Xuzong / Zhang, Keming / Zang, Er Jun / Akimoto, Yoshiaki / Kasahara, Takeshi / Sakamoto, Katsuhira / Inaba, Hajime et al. | 1998
- 194
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Frequency-stabilized tunable diode laser and strong transition iodine hyperfine spectra at 633 nm [3547-27]Chen, X. / Zhang, K. / Zang, E. / Akimoto, Y. / SPIE et al. | 1998
- 203
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8x2.5-Gb/s OTDM data demultiplexing using an SLALOMWang, Dapeng / Yao, Minyu / Zhang, Jianfeng / Gao, Yizhi et al. | 1998
- 203
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8 x 2.5-Gb/s OTDM data demultiplexing using an SLALOM [3547-28]Wang, D. / Yao, M. / Zhang, J. / Gao, Y. / SPIE et al. | 1998
- 207
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Compact and tunable blue laser based upon doubling Cr:LiSAF laser with KN CrystalMeng, Hongxiang / He, Liangfang / Yu, Jin / Shen, Gang et al. | 1998
- 207
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Compact and tunable blue laser based upon doubling Cr:LiSAF laser with KN Crystal [3547-29]Meng, H. / He, L. / Yu, J. / Shen, G. / SPIE et al. | 1998
- 210
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Large-signal regime four-wave mixing characteristcs of multisection laser diodesTang, J. M. / Shore, Keith A. et al. | 1998
- 210
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Large-signal regime four-wave mixing characteristics of multisection laser diodes [3547-51]Tang, J. M. / Shore, K. A. / SPIE et al. | 1998
- 220
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Analysis and measurement of optical phase conjugation in laser diodes subject to a strong input signalHong, Yanhau / Tang, J. M. / Shore, Keith A. et al. | 1998
- 220
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Analysis and measurement of optical phase conjugation in laser diodes subject to a strong input signal [3547-52]Hung, Y. / Tang, J. M. / Shore, K. A. / SPIE et al. | 1998
- 230
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Hybrid mode-lock InGaAsP/InP MQW laser as a multiwavelength source for WDMChen, T. R. / Koumans, Roger M. P. / Eliyahn, D. / Salvatore, Randal A. / Yariv, Amnon et al. | 1998
- 230
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Hybrid mode-lock InGaAsP/InP MQW laser as a multiwavelength source for WDM [3547-53]Chen, T. R. / Koumans, R. G. M. P. / Eliyahn, D. / Salvatore, R. A. / SPIE et al. | 1998
- 240
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Multiwavelength arrays of mode-locked lasers for WDM applications [3547-55]Davis, L. J. / Young, M. G. / Dougherty, D. / Keo, S. A. / SPIE et al. | 1998
- 240
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Multiwavelength arrays of mode-locked lasers for WDM applicationsDavis, Lawrence J. / Young, Martin G. / Dougherty, David J. / Keo, Sam A. / Muller, Richard E. / Maker, Paul D. / Forouhar, Siamak et al. | 1998
- 245
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Axial-graded-index (AGRIN) lens-based wavelength division demultiplexer for multmode fiber optic systemsZhou, Chuang / Chen, Ray T. et al. | 1998
- 245
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Axial-graded-index (AGRIN) lens-based wavelength division demultiplexer for multimode fiber optic systems (Invited Paper) [3547-56]Zhou, C. C. / Chen, R. T. / SPIE et al. | 1998
- 251
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Optical CDMA components requirements (Invited Paper) [3547-57]Chan, J. K. / SPIE et al. | 1998
- 251
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Optical CDMA components requirementsChan, James K. et al. | 1998
- 262
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Semiconductor-laser-based optoelectronics oscillators (Invited Paper) [3547-58]Yao, X. S. / Maleki, L. / Wu, C. / Davis, L. J. / SPIE et al. | 1998
- 262
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Semiconductor laser-based optoelectronics oscillatorsYao, X. S. / Maleki, Lute / Wu, Chi / Davis, Lawrence J. / Forouhar, Siamak et al. | 1998
- 273
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Visible light weak-feedback grating external-cavity tunable semiconductor laserLu, Fuyun / Yuan, Shuzhong / Liu, Yujie / Wei, Zhenxing et al. | 1998
- 273
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Visible light weak-feedback grating external-cavity tunable semiconductor laser [3547-30]Lu, F. / Yuan, S. / Liu, Y. / Wei, Z. / SPIE et al. | 1998
- 278
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High-quality carbon-doped GaAs/AlGaAs material growth by MOCVD and its application for optoelectronic devices [3547-31]Lian, P. / Yin, T. / Xu, Z. / Zhao, H. / SPIE et al. | 1998
- 278
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High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devicesLian, Peng / Yin, Tao / Xu, ZunTu / Zhao, Hongdong / Zou, Deshu / Gao, Guo / Du, Jinyu / Chen, Changhua / Tao, Changbao / Chen, Jianxing et al. | 1998
- 285
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Development of high-precision rotary encoder using semiconductor laser [3547-32]Li, Z. / Che, Y. / Ma, H. / SPIE et al. | 1998
- 285
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Development of high-precision rotary encoder using semiconductor laserLi, Zhanguo / Che, Ying / Ma, Hong et al. | 1998
- 291
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Research of laser-diode-scanning drawing stripesDang, Shuyu et al. | 1998
- 291
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Research of laser diode scanning drawing stripes [3547-33]Dang, S. / SPIE et al. | 1998
- 298
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Noise compensation method study on APD photoelectronic detectorChen, Dianren / Jiang, Huilin / Li, Guiying et al. | 1998
- 298
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Noise compensation method study on APD photoelectronic detector [3547-34]Chen, D. / Jiang, H. / Li, G. / SPIE et al. | 1998
- 302
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Influence of graded index waveguides on the gain difference between TF~0 and TM~0 modes of semiconductor optical amplifiers [3547-35]Chen, C. / Xu, Z. / Yin, T. / Lian, P. / SPIE et al. | 1998
- 302
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Influence of graded index waveguides on the gain difference between TEO and TMO modes of semiconductor optical amplifiersChen, Changhua / Xu, ZunTu / Yin, Tao / Lian, Peng / Zhao, Hongdong / Gao, Guo / Chen, Jianxing / Zou, Deshu / Shen, Guangdi / Xu, Junying et al. | 1998
- 308
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Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells [3547-36]Ma, C. / Jin, Z. / Tian, F. / Yang, N. / SPIE et al. | 1998
- 308
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Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wellsMa, Chunsheng / Jin, Zhi / Tian, Fengshou / Yang, Ningguo / Yang, Shuren / Liu, Shiyong et al. | 1998
- 315
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Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices [3547-37]Mao, D. / Tan, M. / Chen, L. / SPIE et al. | 1998
- 315
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Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devicesMao, Dongsheng / Tan, Manqing / Chen, Lianhui et al. | 1998
- 319
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Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO~2 dielectric cap [3547-59]Lee, L. H. / Ooi, B. S. / Lam, Y. L. / Chan, Y. C. / SPIE et al. | 1998
- 319
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Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO2dielectric capLee, Lye Huat / Ooi, Boon Siew / Lam, Yee Loy / Chan, Yuen Chuen / Kam, Chan Hin et al. | 1998
- 324
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High quantum efficiency InAs/GaInSb/AlSb interband cascade lasersYang, Bao Hua / Yang, Rui Q. / Zhang, Dongxu / Lin, C.H. T. / Pei, Shin Shem et al. | 1998
- 324
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High-quantum-efficiency InAs/GaInSb/AlSb interband cascade lasers (Invited Paper) [3547-60]Yang, B. H. / Yang, R. Q. / Zhang, D. / Lin, C.-H. / SPIE et al. | 1998
- 333
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Valence intersubband lasers without total population inversion based on the inverted massSun, Gregory / Lu, Y. / Khurgin, Jacob B. et al. | 1998
- 333
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Valence intersubband lasers without total population inversion based on the inverted mass [3547-61]Sun, G. / Lu, Y. / Khurgin, J. B. / SPIE et al. | 1998
- 341
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Numerical simulation of the dynamic response of self-assembled In0.4Ga0.6As/GaAs quantum dot lasersJiang, Hongtao / Singh, Jasprit et al. | 1998
- 341
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Numerical simulation of the dynamic response of self-assembled In~0~.~4Ga~0~.~6As/GaAs quantum dot lasers [3547-62]Jiang, H. / Singh, J. / SPIE et al. | 1998
- 350
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High-speed quantum well and quantum dot lasers (Invited Paper) [3547-63]Bhattacharya, P. K. / Zhang, X. / Kamath, K. / Klotzkin, D. / SPIE et al. | 1998
- 350
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High-speed quantum well and quantum dot lasersBhattacharya, Pallab / Zhang, Xiangkun / Kamath, Kishore K. / Klotzkin, David / Phillips, Jamie D. / Caneau, Catherine / Bhat, Rajaram J. et al. | 1998
- 361
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Stability of strained MQWs in laser structureJin, Zhi / Yang, Shuren / Ma, Chunsheng / An, Haiyan / Wang, Benzhong / Liu, Shiyong et al. | 1998
- 361
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Stability of strained MQWs in laser structure [3547-38]Jin, Z. / Yang, S. / Ma, C. / An, H. / SPIE et al. | 1998
- 367
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Novel photonic device structures by using thermal rapid annealing-induced disorderingLuo, Yi / Hao, Zhi-Biao / Sun, Changzheng / Jiang, Ai-Qing et al. | 1998
- 367
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Novel photonic device structures by using rapid-thermal-annealing-induced disordering [3547-39]Luo, Y. / Hao, Z.-B. / Sun, C.-Z. / Jiang, A.-Q. / SPIE et al. | 1998
- 375
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Using ray method to study three-electrode semiconductor lasers [3547-40]Sun, H. / Lu, H. / SPIE et al. | 1998
- 375
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Using ray method to study three-electrode semiconductor lasersSun, Hongxia / Lu, Hongchang et al. | 1998
- 379
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Controlling chaos of a laser diode with all-external optical delay-time feedback [3547-41]Gu, C. / Shen, K. / SPIE et al. | 1998
- 379
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Controlling chaos of a laser diode with all-external optical delaytime feedbackGu, Chunming / Shen, Ke et al. | 1998
- 384
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Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillatorWu, Chi / Keo, Sam A. / Yao, X. S. / Turner, Tasha E. / Davis, Lawrence J. / Young, Martin G. / Maleki, Lute / Forouhar, Siamak et al. | 1998
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