Enhancement in charge transfer by non-ligand exchange process for colloidal hybrid organic(MEH-PPV):inorganic(CdSe) nanocomposites (Englisch)
- Neue Suche nach: Mehta, Aarti
- Neue Suche nach: Sharma, Shailesh N.
- Neue Suche nach: Singh, V. N.
- Neue Suche nach: Srivastva, A. K.
- Neue Suche nach: Chand, S.
- Neue Suche nach: Mehta, Aarti
- Neue Suche nach: Sharma, Shailesh N.
- Neue Suche nach: Singh, V. N.
- Neue Suche nach: Srivastva, A. K.
- Neue Suche nach: Chand, S.
In:
Proc. SPIE
;
8549
; 854933
;
2012
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Elektronische Ressource
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Titel:Enhancement in charge transfer by non-ligand exchange process for colloidal hybrid organic(MEH-PPV):inorganic(CdSe) nanocomposites
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Beteiligte:Mehta, Aarti ( Autor:in ) / Sharma, Shailesh N. ( Autor:in ) / Singh, V. N. ( Autor:in ) / Srivastva, A. K. ( Autor:in ) / Chand, S. ( Autor:in )
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Kongress:16th International Workshop on Physics of Semiconductor Devices ; 2011 ; Kanpur, India
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Erschienen in:Proc. SPIE ; 8549 ; 854933
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:15.10.2012
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ISBN:
-
ISSN:
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DOI:
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Medientyp:Aufsatz (Konferenz)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Origin and characterization of traps in organic semiconductor thin filmsSharma, Akanksha / Yadav, Sarita / Ghosh, Subhasis et al. | 2012
- 854933
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Enhancement in charge transfer by non-ligand exchange process for colloidal hybrid organic(MEH-PPV):inorganic(CdSe) nanocompositesMehta, Aarti / Sharma, Shailesh N. / Singh, V. N. / Srivastva, A. K. / Chand, S. et al. | 2012
- 854934
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Silver-polypyrrole-silver structure fabrication and characterization over wide temperatureTaunk, Manish / Chand, Subhash et al. | 2012
- 854935
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Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO filmsSingh, Chandra Bhal / Sarkar, Surajit / Singh, Vandana / Ram, Sanjay K. / Kumar, Satyendra et al. | 2012
- 854936
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Inkjet printed PEDOT:PSS for organic devicesSingh, Arjun / Mandal, Saumen / Singh, Vandana / Garg, Ashish / Katiyar, Monica et al. | 2012
- 854937
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Electrical testing of the OLED matrix for analyzing defects in a PMOLED displayUttwani, Pankaj K. / Awasthi, Asha / Solanki, Ankur / Kameshwar Rao, I. V. et al. | 2012
- 854938
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White polymer light emitting diode using blend of fluorescent polymersPrakash, Asit / Katiyar, Monica et al. | 2012
- 854939
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Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cellDas, N. R. / Ghosh, Piue / Mitra, Suchismita et al. | 2012
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The impact of process-induced mechanical stress on multi-fingered device performance [8549-90]Alam, N. / Dasgupta, S. / Anand, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacks [8549-117]Mondal, C. / Biswas, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Heterojunction versus homojunction transit time devices at elevated junction temperature: performance comparison at MM wave window frequency [8549-182]Mukherjee, M. / Chakraborty, D. / Das, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design, fabrication and measurement of sub 1 dB noise figure LNA [8549-112]Tomar, S.K. / Mishra, M. / Kumar, A. / Sharma, H. / Sehgal, B.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Low cost, disposable colorimetric sensor for quantitative detection of ammonia gas [8549-51]Srivastava, R. / Verma, A. / Jain, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of graphene based field effect transistor with copper electrodes [8549-38]Srivastava, P.K. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Physical and optical properties of CuBO~2 nanopowders synthesized via sol-gel route [8549-100]Santra, S. / Das, N.S. / Chattopadhyay, K.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Electrical and reliability characteristics of oxide grown by high pressure oxidation of SiC in nitric acid vapor with different gas ambients [8549-128]Selvi, K.K. / Sreenidhi, T. / DasGupta, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of two dimensional carbon nanostructures using hot wire chemical vapor deposition technique [8549-145]Singh, M. / Jha, H.S. / Yadav, A. / Deva, D. / Agarwal, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Facile synthesis of large scale mesoporous TiO~2 microspheres by template-free hydrothermal process: their photocatalysis degradation [8549-148]Sarkar, D. / Chattopadhyay, K.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Enhanced optical absorption in silicon nanowire [8549-151]Hasan, M. / Huq, M.F. / Mahmood, Z.H. / Hussain, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The impact of a high- kappa gate dielectric on a p-channel tunnel field- effect transistor [8549-172]Chattopadhyay, A. / Mallik, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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40GHz integrated multi quantum well intermixed waveguide photodiodes [8549-129]Bhowmick, T. / Das, U. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Charge transport study of polymer light emitting diodes by impedance spectroscopy [8549-178]Bajpai, M. / Srivastava, R. / Kamalasanan, M.N. / Tiwari, R.S. / Chand, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Enhancement in charge transfer by non-ligand exchange process for colloidal hybrid organic(MEH-PPV):inorganic(CdSe) nanocomposites [8549-153]Mehta, A. / Sharma, S.N. / Singh, V.N. / Srivastva, A.K. / Chand, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO films [8549-200]Singh, C.B. / Sarkar, S. / Singh, V. / Ram, S.K. / Kumar, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Characterization of silicide-silicon interface contact resistivity using 1D dual transmission line model approximation of modified cross bridge Kelvin measurements [8549-21]Arya, A. / Jayaraman, B. / Bajaj, M. / Dixit, A. / Tran, C. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comparative study of dynamic characteristics of asymmetrical ATT diodes based on various semiconductor materials with increasing band-gap energy [8549-180]Mukherjee, M. / Garai, M. / Chakraborty, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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NEGF analysis of double gate SiGe and GaAs tunnel FETs [8549-154]Mishra, R. / Ghosh, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Analysis of Angelov model for 0.25μm pHEMTs [8549-108]Mongia, D. / Mishra, M. / Kumar, A. / Balakrishnan, V.R. / Sharma, H. / Sehgal, B.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrate [8549-144]Hossain, M. / Islam, K.N. / Howlader, C.Q. / Mahmood, Z.H. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Wurtzite InN nanodots on Si(100) by molecular beam epitaxy [8549-185]Bhat, T.N. / Rajpalke, M.K. / Kumar, M. / Roul, B. / Krupanidhi, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of pulse parameter and dark count probability on the performance of a gated mode SPAD [8549-68]Das, N.R. / Das, T. / Guin, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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SiC light emitting quantized structures on silicon by spin-on technique [8549-187]Jain, D. / Sandeep, C.R. / Das, U. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Grain growth study of electrochemically deposited CuInSe2 by rapid thermal annealing in sulfur atmosphere [8549-131]Bhatia, A. / Karmarkar, M.A. / Meadows, H. / Dale, P.J. / Scarpulla, M.A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Laser-doped selective emitters for photovoltaic applications [8549-196]Woolridge, J. / Reutzel, E. / Ashok, S. / Zou, L. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Device oriented statistical modeling method for process variability in 45nm analog CMOS technology [8549-107]Ajayan, K.R. / Bhat, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13) [8549-53]Pushpa, N. / Praveen, K.C. / Prakash, A.P.G. / Naik, P.S. / Gupta, S.K. / Revannasiddaiah, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics [8549-126]Pati, S.P. / Tripathy, P.R. / Choudhury, S.K. / Mukharjee, M. / Purohit, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An improved SOI MESFET with triple-recessed drift region for electrical performance improvement [8549-166]Orouji, A.A. / Ghasemian, M. / Aminbeidokhti, A. / Rahmaninezhad, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design aspects of electrostatically driven MEMS adaptive mirror [8549-46]Kumar, S. / Gupta, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effects of size nonuniformity on the optical transitions in a set of realistic In~xGa~1~-~xN/GaN quantum dots, having a Gaussian distribution [8549-88]Kabi, S. / Panda, S. / Biswas, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Characterization of dislocation-based nanotransistors [8549-167]Reiche, M. / Kittler, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Nanostructured TiO~2 thin films for field emission and sensor applications [8549-188]Raut, N.C. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling of charge transport through thiophene nanowire [8549-14]Lamba, V.K. / Engles, S. / Yadav, P. / Dhanda, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Inkjet printed PEDOT:PSS for organic devices [8549-202]Singh, A. / Mandal, S. / Singh, V. / Garg, A. / Katiyar, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequency [8549-181]Mukherjee, M. / Chakraborty, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling and simulation of capacitive sensor for E.Coli bacteria in water [8549-195]Dwivedi, A.K. / Deshmukh, R.B. / Patrikar, R.M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Study of energy eigenvalues and density of states of carriers in a triangular quantum wire [8549-42]Deyasi, A. / Bhattacharyya, S. / Das, N.R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Diffusion thermopower in graphene nanoribbons: effect of subbands [8549-66]Nissimagoudar, A.S. / Sankeshwar, N.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Silicon nanowire arrays using g-line photolithography [8549-183]Prajesh, R. / Tholia, H. / Agarwal, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs [8549-24]Tripathi, S. / Jit, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The simple theoretical analysis of the mass and molar magnetic susceptibilities in quantum wires of II-VI and IV-VI compound semiconductor [8549-6]Roy, S.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector [8549-61]Rakshit, P. / Das, N.R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of organic complementary inverter [8549-43]Yadav, S. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Silver-polypyrrole-silver structure fabrication and characterization over wide temperature [8549-156]Taunk, M. / Chand, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cell [8549-70]Das, N.R. / Ghosh, P. / Mitra, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Deposition of porous low-k thin films using Tween 80 porogen for ILD application in ULSI circuits [8549-152]Mhaisagar, Y.S. / Kawishwar, R. / Joshi, B.N. / Mahajan, A.M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Measurement and analysis of source/drain contact resistance in FinFETs [8549-160]Dixit, A. / Collaert, N. / Jurczak, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET) [8549-78]Narang, R. / Saxena, M. / Gupta, R.S. / Gupta, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Device improvement and circuit performance evaluation of complete SiGe double gate tunnel FETs [8549-155]Ghosh, B. / Mishra, R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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0.4μm high voltage CMOS smart power technology: 120V LD NMOS for integrated system on chip applications [8549-137]Patel, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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New generation MOSFET design for battery powered portable applications [8549-157]Roy, S.D. / Sodhi, R. / Sapp, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachining [8549-63]Prasad, M. / Yadav, R.P. / Sahula, V. / Khanna, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique [8549-25]Panwar, O.S. / Ishpal / Tripathi, R.K. / Srivastava, A.K. / Kumar, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Noise characterization of ALD HfO~2 MOS capacitors with different metal (Au, Pd and Pt) gates [8549-134]Mallik, S. / Mukherjee, C. / Mahata, C. / Dalapati, G.K. / Chi, D.Z. / Maiti, C.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of nano-gap electrodes using a focused ion beam for measuring electrical properties of molecular scale transistors [8549-201]Purohit, G. / Shankar, M. / Deepak / Damodaran, S. / Katiyar, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of Si, Sc, Cr doping on the structural, optical and discharge characteristics of MgO thin films as protective layer for plasma display panels [8549-199]Singh, C.B. / Barik, U.K. / Sarkar, S. / Singh, V. / Ram, S.K. / Dwivedi, H.K. / Kumar, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD [8549-143]Jha, H.S. / Singh, M. / Yadav, A. / Deva, D. / Agarwal, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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On the calculation of energy eigenstates of electrons in a spherical quantum dot [8549-12]Purohit, P. / Roy, D.K. / Pati, S.P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and fabrication of carbon nano-structured flexible antenna [8549-18]Lamba, V.K. / Kumar, A. / Verma, M. / Dhariwal, S. / Sharma, K. / Anand, S. / Engles, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Characterization of traps in SiGe:C channel heterojunction PMOSFETs [8549-23]Mukherjee, C. / Maiti, C.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Ozone/UV-light oxidation of multiwall carbon nanotubes (MWCNTs) [8549-40]Hussain, S. / Islam, S.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Diffusion thermopower in suspended graphene [8549-71]Vaidya, R.G. / Sankeshwar, N.S. / Mulimani, B.G. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Visible blind photodetector based on room temperature grown ZNO nanospikes array [8549-127]Maiti, S. / Maiti, U.N. / Chattopadhyay, K.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Understanding degradation mechanism of bulk heterojunction organic photovoltaic devices [8549-177]Rastogi, S. / Dharmalingam, K. / Katiyar, M. / Garg, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optical and electrical characterization of atomic layer deposited (ALD) HfO~2/p-GaAs MOS capacitors [8549-20]Das, A. / Chattopadhyay, S. / Dalapati, G.K. / Chi, D. / Kumar, M.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT [8549-64]Bhattacharya, M. / Jogi, J. / Gupta, R. / Gupta, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comparative study of high frequency characteristics of SiC-based SDRs [8549-45]Parida, R.K. / Panda, A.K. / Dash, G.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Tunable MEMS diffraction gratings [8549-47]Suresh, V.G. / DasGupta, N. / Bhattacharya, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compounds [8549-50]Chandra, S. / Pandya, H. / Vyas, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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MEMS deformable mirrors: technology and applications [8549-57]Gupta, A. / Singh, R. / Chaudhary, M. / Kumar, S. / Meena, A.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices [8549-74]Reddy J, P. / Kashyap, S. / Mishra, S. / Paul, A.K. / Kapur, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications [8549-84]Lenka, M.K. / Sharma, A. / Sharma, J. / DasGupta, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor [8549-7]Kumari, V. / Mishra, P. / Islam, S.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An InGaSb TFET with high Ion/Ioff ratio and low circuit leakage power [8549-175]Mamilla, B.K. / Nair, S. / Ghosh, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED [8549-39]Sreenidhi, T. / Chatterjee, J. / DasGupta, A. / DasGupta, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application [8549-79]Dwivedi, N. / Kumar, S. / Dayal, S. / Rauthan, C.M.S. / Panwar, O.S. / Malik, H. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Hybrid organic (P3HT and MEH-PPV)-inorganic (CuInGaSe2) nanocomposites: charge transfer and photostability studies [8549-158]Kharkwal, A. / Sharma, S.N. / Chand, S. / Singh, A.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power supplies [8549-10]Challa, A. / Sarkar, T. / Sapp, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs [8549-52]Praveen, K.C. / Pushpa, N. / Tripathi, A. / Revannasiddaiah, D. / Naik, P.S. / Cressler, J.D. / Prakash, A.P.G. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Surface charging of silicon dioxide and aluminum dioxide structures [8549-105]Rathi, A. / Martin, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Growth and characterization of Al~xGa~1~-~xN on GaN/Al~2O~3 [8549-120]Jayasakthi, M. / Ramesh, R. / Arivazhagan, P. / Loganathan, R. / Prabakaran, K. / Balaji, M. / Baskar, K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy [8549-179]Rajpalke, M.K. / Bhat, T.N. / Kumar, M. / Roul, B. / Krupanidhi, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Electrical testing of the OLED matrix for analyzing defects in a PMOLED display [8549-102]Uttwani, P.K. / Awasthi, A. / Solanki, A. / Rao, I.V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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White polymer light emitting diode using blend of fluorescent polymers [8549-198]Prakash, A. / Katiyar, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling the gain and bandwidth of submicron active layer n^+-i-p^+ avalanche photodiode [8549-48]Majumder, K. / Das, N.R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI [8549-96]Misra, P.K. / Qureshi, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template [8549-132]Bag, R.K. / Tyagi, R. / Mohan, P. / Narang, K. / Verma, S. / Muralidharan, R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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RF power amplifier: pushing the boundaries of performance versus cost [8549-203]De Souza, M.M. / Chevaux, N. / Rasheduzzaman, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Metal organic chemical vapor deposition and investigation of structural, optical and gas sensing characteristics of ZnO thin film grown on quartz [8549-141]Pati, S. / Banerji, P. / Majumder, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design of vertical packaging technology for RF MEMS switch [8549-16]Bansal, D. / Sharma, A. / Kaur, M. / Rangra, K.J. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optical interrogation of a pressure sensor fabricated using MEMS technology [8549-171]Dhingra, B. / Thyagarajan, K. / Chandra, S. / Tiwari, R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Low temperature tin oxide (SnO~2) nanowire gas sensor [8549-26]Johari, A. / Bhatnagar, M.C. / Rana, V. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and mathematical model of a ZnO-based MEMS acoustic sensor [8549-73]Prasad, M. / Yadav, R.P. / Sahula, V. / Khanna, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics [8549-104]Chowdhury, B.N. / Singh, P. / Chattopadhyay, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by anodic jet carbon arc technique [8549-184]Tripathi, R.K. / Panwar, O.S. / Kesarwani, A. / Kumar, S. / Basu, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Photon decay time studies on Al~0~.~4~5Ga~1~-~0~.~5~5N/Al~0~.~1~8Ga~1~-~0~.~8~2N/Al~0~.~4~5Ga~1~-~0~.~5~5N double heterostructures grown on sapphire substrate by MOCVD [8549-125]Arivazhagan, P. / Ramesh, R. / Jayasakthi, M. / Loganathan, R. / Balaji, M. / Baskar, K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Origin and characterization of traps in organic semiconductor thin films [8549-58]Sharma, A. / Yadav, S. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Structural, electronic and optical properties of oxygen and Mn substituted ZnIn~2Te~4 chalcopyrite semiconductors [8549-194]Mishra, S. / Ganguli, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Digital circuit analysis of insulated shallow extension silicon on void (ISESOV) FET for low voltage applications [8549-77]Kumari, V. / Saxena, M. / Gupta, R. / Gupta, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT [8549-136]Pattanaik, S.R. / Pradhan, J. / Swain, S.K. / Panda, P. / Dash, G.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Simulation studies on heterojunction and HIT solar cells [8549-162]Patel, K. / Panwar, O.S. / Bisht, A. / Sreekumar, C. / Kumar, S. / Rauthan, C.M.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor [8549-93]Krishnakumar, K. / Dinesh, C.M. / Khan, S.A. / Kanjilal, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Electrical characterization of gamma -Al~2O~3 thin film parallel plate capacitive sensor for trace moisture detection [8549-101]Kumar, L. / Kumar, S. / Khan, S.A. / Islam, T. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Stability study on ceramic mercuric iodide (red) x-ray sensor [8549-15]Singh, K. / Saxena, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design of piezoresistive MEMS absolute pressure sensor [8549-9]Kumar, S.S. / Pant, B.D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges [8549-32]Sivasankaran, K. / Pilli, K. / Mallick, P.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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AC conductivity and dielectric studies on nickel ferrite nano-particles synthesized by sol gel technique (NT28) [8549-62]Omprakash, S. / Prakash, A.P.G. / Naik, P.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effects of constant voltage stressing on HfTaO~x/SiGe gate stack [8549-138]Mallik, S. / Mahata, C. / Hota, M.K. / Sarkar, C.K. / Maiti, C.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The role of separate confinement heterostructure layer in designing semiconductor nanostructured optoelectronic devices [8549-169]Shmavonyan, G.S. / Asatryan, H.G. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Quantum confinement effect on photoluminescence of nanocrystalline ZnO thin films [8549-176]Arora, M. / Singh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistors [8549-186]Singh, S. / Chakrabarti, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Bloch wave analysis for optical band structure of Ill-nitrides photonic crystals [8549-99]Ghosh, K. / Ghosh, R. / Ghosal, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Cl~2/Ar based inductively coupled plasma etching of GaN/AlGaN structure [8549-75]Rawal, D.S. / Arora, H. / Agarwal, V.R. / Kappor, A. / Vinayak, S. / Sehgal, B.K. / Muralidharan, R. / Saha, D. / Malik, H.K. / Indian Institute of Technology Kanpur et al. | 2012
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Structural and gas sensing properties of sprayed antimony doped tin oxide thin films [8549-113]Joshi, P.S. / Sutrave, D.S. / Jogade, S.M. / Jamadar, B.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Proton beam writing for minimum step lithography in multilayer patterning [8549-168]Sarkar, M. / Shukla, N. / Banerji, N. / Mohapatra, Y.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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FEM simulation of CMUT cell for NDT application [8549-92]Aditi / Mukhiya, R. / Gopal, R. / Khanna, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Positioning of CNTs over the gold substrate via self-assembled monolayer functionalization using dip-pen nanowriting [8549-44]Agarwal, P.B. / Sahu, S. / Kapse, P. / Gupta, S.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Room temperature ferromagnetism in Cu doped ZnO for spintronics [8549-106]Khan, Z.A. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Complex bandstructure of direct bandgap III-V semiconductors: application to tunneling [8549-130]Ajoy, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Studies on the dislocation densities of gallium nitride grown by MOCVD [8549-109]Loganathan, R. / Jayasakthi, M. / Arivazhagan, P. / Ramesh, R. / Prabakaran, K. / Balaji, M. / Baskar, K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Semi-analytical estimation of intra-die variations of analog performances of nano-scale nMOS transistor [8549-69]Sengupta, S. / Pandit, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A resistive type humidity sensor based on ZnO-SnO~2 nanocomposite [8549-29]Tiwari, K. / Pandey, N.K. / Kumar, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations [8549-116]Gupta, S.D. / Biswas, A. / Mitard, J. / Eneman, G. / De Jaeger, B. / Meuris, M. / Heyns, M.M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Tuning the photoluminescence of ZnO thin films by indium doping [8549-173]Chirakkara, S. / Krupanidhi, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Growth of nanocrystalline silicon films by VHF PECVD [8549-135]Gope, J. / Kumar, S. / Singh, S. / Rauthan, C.M.S. / Srivastava, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012